FQP11P06 Equivalent & Substitute Parts

Part Overview

The FQP11P06 is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 11.4A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is classified as obsolete. The part belongs to the onsemi QFET® series and is suitable for applications requiring P-channel switching and amplification in power management circuits.

Due to its obsolete product status, equivalent and substitute parts are necessary for new designs, production continuity, and long-term component availability. Substitute devices must maintain compatibility with the electrical specifications and mechanical form factor of the original design.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	11.4	A
On-State Drain Resistance (Rds On Max) @ 5.7A, 10V	175	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	17	nC
Maximum Gate Voltage (Vgs Max)	±25	V
Input Capacitance (Ciss Max) @ 25V	550	pF
Power Dissipation (Max)	53	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the FQP11P06 are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 60V
FET Type: Must be P-Channel
Technology: Must be MOSFET (Metal Oxide)
Package Type: Must be Through Hole TO-220 or TO-220-3
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Criteria:

Continuous Drain Current (Id): Must meet or exceed 11.4A at 25°C
On-State Drain Resistance (Rds On): Lower values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V specification
Maximum Gate Voltage (Vgs Max): Must support ±25V operation

Substitute parts are grouped into two categories: manufacturer-recommended equivalents (direct replacements with enhanced specifications) and similar alternatives (functionally compatible devices from other manufacturers).

Parameter Comparison

Parameter	FQP11P06	FQP17P06	STP10P6F6	Unit
Manufacturer	onsemi	onsemi	STMicroelectronics	—
Product Status	Obsolete	Active	Obsolete	—
Drain to Source Voltage (Vdss)	60	60	60	V
Continuous Drain Current (Id) @ 25°C	11.4	17	10	A
On-State Drain Resistance (Rds On Max)	175 @ 5.7A, 10V	120 @ 8.5A, 10V	160 @ 5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	4	4	V
Gate Charge (Qg Max) @ 10V	17	27	6.4	nC
Maximum Gate Voltage (Vgs Max)	±25	±25	±20	V
Input Capacitance (Ciss Max)	550 @ 25V	900 @ 25V	340 @ 48V	pF
Power Dissipation (Max)	53	79	30	W
Operating Temperature Range	-55 to 175	-55 to 175	to 175	°C
Package Type	TO-220-3	TO-220-3	TO-220	Through Hole
FET Type	P-Channel	P-Channel	P-Channel	—
Technology	MOSFET	MOSFET	MOSFET	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

FQP17P06 (onsemi) - Manufacturer-Recommended Equivalent

The FQP17P06 is the primary substitute for the FQP11P06. This device maintains identical voltage ratings (60V Vdss) and operating temperature range (-55°C to 175°C). The FQP17P06 provides enhanced current handling capability at 17A continuous drain current, exceeding the original 11.4A specification. On-state drain resistance is reduced to 120mOhm at 8.5A and 10V, compared to 175mOhm in the original part. Power dissipation capability increases to 79W. The FQP17P06 carries Active product status, ensuring long-term availability and supply chain continuity. Both devices are ROHS3 compliant and REACH unaffected. The FQP17P06 is packaged in Tube format with TO-220-3 configuration, maintaining mechanical compatibility with the original design.

STP10P6F6 (STMicroelectronics) - Similar Alternative

The STP10P6F6 provides functional compatibility with the FQP11P06 as a P-Channel MOSFET with 60V Vdss rating. This device delivers 10A continuous drain current, slightly below the original 11.4A specification. On-state drain resistance is 160mOhm at 5A and 10V. Gate charge is significantly lower at 6.4nC compared to 17nC in the original part, resulting in faster switching characteristics. Input capacitance is reduced to 340pF. Power dissipation is limited to 30W, which is lower than the original 53W specification. The STP10P6F6 is classified as Obsolete and carries a maximum gate voltage rating of ±20V, compared to ±25V in the original part. This device is ROHS3 compliant and REACH unaffected. The STP10P6F6 is packaged in Tube format with TO-220 configuration.

Frequently Asked Questions (FAQ)

Q: Can the FQP17P06 be used as a direct replacement for the FQP11P06?

A: Yes. The FQP17P06 maintains identical voltage ratings (60V Vdss), gate threshold voltage (4V), maximum gate voltage (±25V), and operating temperature range (-55°C to 175°C). The enhanced current rating (17A vs. 11.4A) and improved on-state resistance (120mOhm vs. 175mOhm) make it a superior substitute. Both devices use TO-220-3 packaging and are ROHS3 compliant.

Q: What are the limitations of using the STP10P6F6 as a substitute?

A: The STP10P6F6 has a lower continuous drain current rating (10A vs. 11.4A), reduced power dissipation capability (30W vs. 53W), and a lower maximum gate voltage (±20V vs. ±25V). The device is also classified as Obsolete. These factors make it suitable only for applications with reduced current and power requirements. The lower gate charge (6.4nC) provides faster switching characteristics.

Q: Are all substitute parts compatible with the original TO-220-3 footprint?

A: The FQP17P06 uses TO-220-3 packaging and is fully compatible with the original footprint. The STP10P6F6 uses TO-220 packaging, which is mechanically similar but may have minor pin spacing variations. Verification of PCB layout compatibility is necessary before substitution.

Q: What is the significance of the Obsolete product status?

A: Obsolete status indicates that the manufacturer has discontinued production. The FQP11P06 and STP10P6F6 are both Obsolete, making them unsuitable for new designs or long-term production. The FQP17P06 carries Active status, ensuring continued availability and manufacturing support.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The FQP17P06 has higher gate charge (27nC) than the original (17nC), requiring more drive energy but providing robust switching. The STP10P6F6 has significantly lower gate charge (6.4nC), enabling faster switching with reduced driver power consumption. Circuit design must account for these differences in gate drive requirements.

Q: Are there compliance differences between substitute parts?

A: All three devices are ROHS3 compliant and REACH unaffected. Moisture sensitivity levels and ECCN classifications are identical (EAR99). HTSUS codes match across all devices. No compliance barriers exist for substitution.

Q: What is the impact of reduced on-state resistance in the FQP17P06?

A: Lower on-state resistance (120mOhm vs. 175mOhm) reduces conduction losses and heat generation during operation. This improves overall circuit efficiency and reduces thermal management requirements. The FQP17P06 dissipates less heat at equivalent current levels compared to the FQP11P06.

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