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FQD8P10TM_F080 Equivalent & Substitute Parts
Part Overview
The FQD8P10TM_F080 is a P-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 6.6A continuous drain current in a surface mount TO-252AA (DPAK) package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. The part belongs to the onsemi QFET® series and is suitable for applications requiring P-channel switching and amplification in power management circuits.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Drain to Source Voltage (Vdss) | 100 | V |
| Current - Continuous Drain (Id) @ 25°C | 6.6 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 530 | mOhm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 | nC @ 10V |
| Vgs (Max) | ±30 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 | pF @ 25V |
| Power Dissipation (Max) | 2.5 (Ta), 44 (Tc) | W |
| Operating Temperature | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the FQD8P10TM_F080 is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss): Must equal or exceed 100V
- Continuous Drain Current (Id): Must equal or exceed 6.6A at 25°C
- Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V maximum specification
- Maximum Gate Voltage (Vgs): Must accommodate ±30V or greater
- On-State Resistance (Rds On): Lower values indicate improved performance; 530mOhm represents the maximum acceptable specification
- Operating Temperature Range: Must span -55°C to 150°C
Mechanical Compatibility Criteria:
- Mounting Type: Surface Mount required
- Package / Case: TO-252-3 (DPAK) with identical pin configuration
- Moisture Sensitivity Level: MSL 1 (Unlimited) acceptable
Substitution Categories:
Parametric Equivalents (FQD8P10TM, FQD8P10TM-F085): These parts share identical electrical specifications with the main part and are pin-compatible. They differ in product status (active versus obsolete) and packaging format. FQD8P10TM-F085 includes AEC-Q101 automotive qualification.
Similar Substitute (IRFR9120NTRPBF): This Infineon Technologies part meets all critical electrical requirements with comparable or superior performance characteristics. Minor variations exist in gate charge, input capacitance, and maximum gate voltage, which do not preclude functional substitution in applications designed for the FQD8P10TM_F080.
Parameter Comparison
| Parameter | FQD8P10TM_F080 | FQD8P10TM | FQD8P10TM-F085 | IRFR9120NTRPBF |
|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | Infineon Technologies |
| Product Status | Obsolete | Active | Active | Active |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel |
| Vdss (V) | 100 | 100 | 100 | 100 |
| Id @ 25°C (A) | 6.6 | 6.6 | 6.6 | 6.6 |
| Rds On (Max) (mOhm) | 530 @ 3.3A, 10V | 530 @ 3.3A, 10V | 530 @ 3.3A, 10V | 480 @ 3.9A, 10V |
| Vgs(th) (Max) (V) | 4 @ 250µA | 4 @ 250µA | 4 @ 250µA | 4 @ 250µA |
| Qg (Max) (nC) | 15 @ 10V | 15 @ 10V | 15 @ 10V | 27 @ 10V |
| Vgs (Max) (V) | ±30 | ±30 | ±30 | ±20 |
| Ciss (Max) (pF) | 470 @ 25V | 470 @ 25V | 470 @ 25V | 350 @ 25V |
| Power Dissipation (Max) (W) | 2.5 (Ta), 44 (Tc) | 2.5 (Ta), 44 (Tc) | 2.5 (Ta), 44 (Tc) | 40 (Tc) |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Primary Recommendation: FQD8P10TM
The FQD8P10TM is the direct parametric equivalent to the FQD8P10TM_F080. This part maintains identical electrical specifications and package configuration while offering active product status and ROHS3 compliance. Availability is significantly higher (16,600 pieces in stock versus 768 pieces for the obsolete variant), ensuring supply chain continuity. This part is suitable for all applications previously designed with the FQD8P10TM_F080.
Secondary Recommendation: FQD8P10TM-F085
The FQD8P10TM-F085 provides parametric equivalence with the addition of AEC-Q101 automotive qualification and Automotive grade designation. This part is appropriate for applications requiring automotive-grade components or those subject to automotive supply chain requirements. Inventory availability is 3,160 pieces. ROHS3 compliance is confirmed.
Alternative Recommendation: IRFR9120NTRPBF
The IRFR9120NTRPBF from Infineon Technologies is a functional substitute meeting all critical electrical requirements. This part exhibits superior on-state resistance (480mOhm versus 530mOhm) and lower input capacitance (350pF versus 470pF), resulting in improved switching efficiency. The maximum gate voltage specification is ±20V, which is lower than the ±30V specification of the FQD8P10TM_F080 but remains compatible with standard gate drive circuits. Gate charge is higher (27nC versus 15nC), which may increase switching losses in high-frequency applications. Inventory availability is highest among all options (37,100 pieces). ROHS3 compliance is confirmed. This part is suitable for applications where Infineon HEXFET® technology is acceptable and where the specified electrical variations do not conflict with circuit design parameters.
Frequently Asked Questions (FAQ)
Q: Can the FQD8P10TM directly replace the FQD8P10TM_F080 without circuit modification?
A: Yes. The FQD8P10TM is a parametric equivalent with identical electrical specifications and pin configuration. No circuit modification is required. The primary difference is product status (active versus obsolete) and packaging format (Cut Tape & Digi-Reel® versus the original packaging).
Q: What is the difference between FQD8P10TM and FQD8P10TM-F085?
A: Both parts share identical electrical specifications and package configuration. FQD8P10TM-F085 includes AEC-Q101 automotive qualification and Automotive grade designation, making it suitable for automotive applications. FQD8P10TM is the standard industrial-grade variant. Selection depends on application requirements and supply chain specifications.
Q: Is the IRFR9120NTRPBF a direct replacement for the FQD8P10TM_F080?
A: The IRFR9120NTRPBF is a functional substitute that meets all critical electrical requirements (Vdss, Id, Vgs(th), operating temperature range) and shares the same TO-252AA package. However, minor parameter variations exist: lower on-state resistance (480mOhm versus 530mOhm), lower input capacitance (350pF versus 470pF), higher gate charge (27nC versus 15nC), and lower maximum gate voltage (±20V versus ±30V). These differences do not preclude substitution in most applications but should be verified against specific circuit design parameters, particularly in high-frequency switching applications where gate charge and capacitance values impact performance.
Q: Are all substitute parts ROHS3 compliant?
A: FQD8P10TM and FQD8P10TM-F085 are confirmed ROHS3 compliant. IRFR9120NTRPBF is confirmed ROHS3 compliant. The original FQD8P10TM_F080 does not specify RoHS status in available documentation.
Q: What is the moisture sensitivity level for these parts?
A: All parts listed (FQD8P10TM_F080, FQD8P10TM, FQD8P10TM-F085, and IRFR9120NTRPBF) have MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions for storage and handling.
Q: Can these parts be used interchangeably in high-frequency switching applications?
A: FQD8P10TM and FQD8P10TM-F085 are fully interchangeable. The IRFR9120NTRPBF exhibits higher gate charge (27nC versus 15nC), which increases switching losses at high frequencies. Verify that the higher gate charge does not exceed the gate drive circuit's current capability and that the resulting switching losses remain within thermal design limits.
Q: What is the difference in on-state resistance between the FQD8P10TM_F080 and IRFR9120NTRPBF?
A: The FQD8P10TM_F080 specifies 530mOhm maximum on-state resistance at 3.3A and 10V gate voltage. The IRFR9120NTRPBF specifies 480mOhm maximum on-state resistance at 3.9A and 10V gate voltage. The lower resistance of the IRFR9120NTRPBF results in reduced conduction losses and improved thermal performance in power dissipation-critical applications.
Q: Are there any compliance or certification differences between these parts?
A: FQD8P10TM-F085 includes AEC-Q101 automotive qualification, making it suitable for automotive applications. FQD8P10TM and IRFR9120NTRPBF do not carry automotive qualification. All parts are REACH Unaffected and classified as EAR99 for export control purposes. All parts have MSL 1 (Unlimited) moisture sensitivity rating.
Q: Which part should be selected for new designs?
A: For new designs requiring onsemi components, FQD8P10TM is recommended due to active product status, high availability, and parametric equivalence to the FQD8P10TM_F080. For automotive applications, FQD8P10TM-F085 is appropriate. For applications where Infineon technology is acceptable and where improved on-state resistance is beneficial, IRFR9120NTRPBF is a suitable alternative.
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