FQD7N20TM Equivalent & Substitute Parts

Part Overview

The FQD7N20TM is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with a continuous drain current of 5.3A at 25°C. This device is housed in a TO-252AA (DPAK) surface mount package and is designed for general-purpose switching applications requiring moderate current handling at elevated voltages. The FQD7N20TM is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements.

Substiute Parts

FQD7N20TM

onsemiIn Stock: 56580FQD7N20TM Datasheet

Current PartRFQ

ZXMN20B28KTC

Diodes IncorporatedIn Stock: 15527ZXMN20B28KTC Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQD7N20TM is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• FET Type: N-Channel
• Drain-to-Source Voltage (Vdss): 200V minimum
• Package Type: TO-252-3 (DPAK) surface mount
• Operating Temperature Range: -55°C to 150°C minimum

Functional Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than 5.3A
• On-State Resistance (Rds On): Equal to or less than 690mOhm at specified conditions
• Gate Threshold Voltage (Vgs(th)): Within acceptable drive voltage range
• Maximum Gate Voltage (Vgs): ±20V minimum

The ZXMN20B28KTC from Diodes Incorporated meets the mandatory matching criteria for voltage rating, package type, and temperature range. However, the continuous drain current specification of 1.5A is below the FQD7N20TM requirement of 5.3A, limiting its application to lower-current circuit designs.

Parameter Comparison

Engineering Selection Recommendations

FQD7N20TM (onsemi) — Obsolete Status: The FQD7N20TM is classified as obsolete and should not be selected for new designs. Existing inventory of 56,517 pieces is available for legacy production support only. This device carries REACH Unaffected status and EAR99 export classification.

ZXMN20B28KTC (Diodes Incorporated) — Active Alternative: The ZXMN20B28KTC is an active product suitable for new designs requiring 200V N-Channel MOSFET functionality in TO-252-3 package format. This device is RoHS3 compliant and carries REACH Unaffected status with EAR99 export classification. Current inventory of 15,465 pieces is available.

Substitution Applicability: The ZXMN20B28KTC is a direct package and voltage-class substitute for the FQD7N20TM. However, circuit designs must account for the reduced continuous drain current rating of 1.5A versus the original 5.3A specification. Applications requiring the full 5.3A current capacity cannot use this substitute without circuit redesign or parallel device configuration. The lower gate threshold voltage (2.5V versus 5V) and reduced maximum gate voltage (±20V versus ±30V) must be evaluated for compatibility with existing gate drive circuits.

Frequently Asked Questions (FAQ)

Q: Can the ZXMN20B28KTC directly replace the FQD7N20TM in all applications?

A: The ZXMN20B28KTC provides direct package and voltage compatibility. However, the continuous drain current is reduced from 5.3A to 1.5A. Direct replacement is only applicable to circuits operating at or below 1.5A continuous drain current. Higher-current applications require circuit redesign or alternative solutions.

Q: What are the key differences between these two devices?

A: Both devices share identical 200V voltage rating and TO-252-3 package format. Primary differences include: continuous drain current (5.3A versus 1.5A), gate threshold voltage (5V versus 2.5V), maximum gate voltage (±30V versus ±20V), and power dissipation rating (45W versus 2.2W). The FQD7N20TM is obsolete; the ZXMN20B28KTC is active production.

Q: Are there any compliance or certification differences?

A: Both devices carry REACH Unaffected status and EAR99 export classification. The ZXMN20B28KTC is RoHS3 compliant. The FQD7N20TM carries no RoHS designation due to obsolete status. Both devices have MSL 1 (Unlimited) moisture sensitivity rating.

Q: How do the on-state resistance values compare?

A: The FQD7N20TM specifies 690mOhm at 2.65A and 10V gate voltage. The ZXMN20B28KTC specifies 750mOhm at 2.75A and 10V gate voltage. The difference is approximately 8.7%, representing comparable on-state performance within typical device tolerance ranges.

Q: What is the impact of the lower gate threshold voltage in the ZXMN20B28KTC?

A: The ZXMN20B28KTC gate threshold voltage of 2.5V (versus 5V for the FQD7N20TM) indicates faster turn-on at lower gate drive voltages. This may require gate drive circuit evaluation to ensure compatibility with existing control logic and prevent unintended switching behavior.

Q: Can these devices be used in parallel for higher current applications?

A: Parallel operation is not addressed in the provided specifications. Circuit design considerations for parallel MOSFETs, including gate drive matching and current sharing, must be evaluated separately based on application requirements.

Q: What packaging format is used for both devices?

A: Both the FQD7N20TM and ZXMN20B28KTC use TO-252-3 (DPAK) surface mount package with 2 leads plus tab configuration. The ZXMN20B28KTC is supplied in Tape & Reel format for automated assembly.