FQD6N50CTM_F080 Equivalent & Substitute Parts

Part Overview

The FQD6N50CTM_F080 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 4.5A continuous drain current at 25°C. This device is packaged in a Surface Mount TO-252-3 DPAK configuration and belongs to the QFET® series. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

FQD6N50CTM_F080

onsemiIn Stock: 808FQD6N50CTM_F080 Datasheet

Current PartRFQ

RJK5033DPD-00#J2

Renesas Electronics CorporationIn Stock: 7069RJK5033DPD-00#J2 Datasheet

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STD6N52K3

STMicroelectronicsIn Stock: 50135STD6N52K3 Datasheet

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STD7NK40ZT4

STMicroelectronicsIn Stock: 35107STD7NK40ZT4 Datasheet

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TK6P53D(T6RSS-Q)

Toshiba Semiconductor and StorageIn Stock: 3152TK6P53D(T6RSS-Q) Datasheet

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TK7P50D(T6RSS-Q)

Toshiba Semiconductor and StorageIn Stock: 2930TK7P50D(T6RSS-Q) Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQD6N50CTM_F080 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Substitute parts must equal or exceed 500V
• Continuous Drain Current (Id): Substitute parts must equal or exceed 4.5A
• On-State Resistance (Rds On): Substitute parts must not exceed 1.2Ohm at rated conditions
• Package Type: All substitutes must use TO-252-3 DPAK Surface Mount configuration
• Gate Voltage Rating (Vgs Max): Must support ±30V
• Operating Temperature: Must support -55°C to 150°C range

Substitution Logic: Substitute parts are grouped based on voltage class (500V or higher) and current capability (4.5A or higher). Parts meeting or exceeding these specifications while maintaining compatible package geometry and thermal characteristics are considered functional equivalents. All substitute parts listed maintain the same Surface Mount DPAK package footprint, ensuring mechanical compatibility in existing PCB designs.

Parameter Comparison

Engineering Selection Recommendations

RJK5033DPD-00#J2 (Renesas Electronics Corporation): This substitute provides 6A continuous drain current at 500V, exceeding the FQD6N50CTM_F080 current specification. On-state resistance of 1.3Ohm is marginally higher but acceptable for most applications. The device is active and ROHS3 compliant. Packaging is Tape & Reel (TR) in MP-3A configuration, maintaining TO-252-3 DPAK footprint compatibility. Operating temperature is limited to 150°C maximum, which does not support the lower -55°C minimum of the original part.

STD6N52K3 (STMicroelectronics): This substitute operates at 525V, providing 25V margin above the original specification. Continuous drain current of 5A exceeds the 4.5A requirement. On-state resistance matches the original at 1.2Ohm. The device is active, ROHS3 compliant, and part of the SuperMESH3™ series. Operating temperature is limited to 150°C maximum. Cut Tape (CT) packaging maintains DPAK footprint compatibility.

STD7NK40ZT4 (STMicroelectronics): This substitute operates at 400V, which is 100V below the original specification. Continuous drain current of 5.4A exceeds the 4.5A requirement. On-state resistance of 1Ohm is superior to the original. The device is active, ROHS3 compliant, and part of the SuperMESH™ series. Operating temperature range of -55°C to 150°C matches the original. This part is suitable only for applications where 400V Vdss is sufficient.

TK6P53D(T6RSS-Q) (Toshiba Semiconductor and Storage): This substitute operates at 525V with 6A continuous drain current, exceeding both voltage and current specifications. On-state resistance of 1.3Ohm is marginally higher. Gate charge of 12nC is significantly lower than the original 25nC, indicating faster switching characteristics. The device is active and ROHS3 compliant, part of the π-MOSVII series. Operating temperature is limited to 150°C maximum. Tape & Reel (TR) packaging maintains DPAK footprint compatibility.

TK7P50D(T6RSS-Q) (Toshiba Semiconductor and Storage): This substitute operates at 500V with 7A continuous drain current, significantly exceeding the original 4.5A specification. On-state resistance of 1.22Ohm is comparable to the original. Gate charge of 12nC is significantly lower, indicating faster switching characteristics. The device is active and ROHS3 compliant, part of the π-MOSVII series. Operating temperature is limited to 150°C maximum. Cut Tape (CT) & Digi-Reel® packaging maintains DPAK footprint compatibility.

Frequently Asked Questions (FAQ)

Q: Can the RJK5033DPD-00#J2 directly replace the FQD6N50CTM_F080?

A: The RJK5033DPD-00#J2 meets the primary electrical specifications: 500V Vdss, 6A Id (exceeds 4.5A requirement), and 1.3Ohm Rds On. Both devices use TO-252-3 DPAK packaging. However, the operating temperature range differs; the substitute supports only 150°C maximum, whereas the original supports -55°C to 150°C. Substitution is valid for applications operating within 0°C to 150°C range.

Q: Why does STD7NK40ZT4 have a lower Vdss rating?

A: The STD7NK40ZT4 operates at 400V Vdss, which is 100V below the original FQD6N50CTM_F080 specification. This part is listed as a substitute because it meets or exceeds all other critical parameters (current, Rds On, package type). Substitution is appropriate only for circuit designs where the maximum operating voltage does not exceed 400V.

Q: What is the significance of lower gate charge in Toshiba substitutes?

A: The Toshiba TK6P53D and TK7P50D devices exhibit gate charge of 12nC compared to the original 25nC. Lower gate charge indicates faster switching transitions, which can reduce switching losses in high-frequency applications. This is a performance advantage but does not affect DC operating characteristics or package compatibility.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed are ROHS3 compliant. The original FQD6N50CTM_F080 does not specify RoHS status. All substitutes are REACH unaffected and carry EAR99 ECCN classification, matching the original part's regulatory status.

Q: Can I use TK7P50D(T6RSS-Q) in place of FQD6N50CTM_F080 without circuit modifications?

A: The TK7P50D(T6RSS-Q) is electrically compatible at 500V Vdss and provides superior current handling (7A vs. 4.5A). Both use TO-252-3 DPAK packaging. The lower gate charge (12nC vs. 25nC) may improve switching performance. No circuit modifications are required for DC operation. However, gate drive circuits optimized for the original 25nC gate charge may benefit from re-evaluation for the lower 12nC specification.

Q: What is the difference between Tc and Ta current ratings?

A: Tc denotes continuous drain current measured at the case temperature (Tc), while Ta denotes continuous drain current measured at ambient temperature (Ta). The FQD6N50CTM_F080 specifies 4.5A at Tc. Substitute parts using Ta ratings (RJK5033DPD-00#J2, TK6P53D, TK7P50D) may have different thermal characteristics. Verify thermal management requirements for your specific application.

Q: Are the packaging variants (Tape & Reel vs. Cut Tape) interchangeable?

A: Yes. Tape & Reel (TR) and Cut Tape (CT) packaging variants contain identical semiconductor dies in the same TO-252-3 DPAK package. The difference is in the carrier format for automated assembly. Both are mechanically and electrically compatible for PCB mounting.

Q: Which substitute offers the best thermal performance?

A: The Toshiba TK6P53D(T6RSS-Q) and TK7P50D(T6RSS-Q) offer the highest power dissipation ratings at 100W (Tc), compared to the original 61W (Tc). The STMicroelectronics STD6N52K3 and STD7NK40ZT4 offer 70W (Tc). Higher power dissipation ratings indicate superior thermal performance under continuous operation.