FQD5N60CTM_F080 Equivalent & Substitute Parts

Part Overview

The FQD5N60CTM_F080 is an N-Channel 600 V MOSFET manufactured by onsemi, rated for 2.8 A continuous drain current in a surface mount TO-252AA (DPAK) package. This part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within acceptable parameter tolerances for the same application category.

Key Parameters

Parameter	Value	Specification Basis
FET Type	N-Channel	Device topology
Drain to Source Voltage (Vdss)	600 V	Voltage rating
Continuous Drain Current (Id) @ 25°C	2.8 A (Tc)	Current rating
Rds On (Max) @ Id, Vgs	2.5 Ω @ 1.4 A, 10 V	On-state resistance
Gate Threshold Voltage Vgs(th) (Max) @ Id	4 V @ 250 µA	Gate drive requirement
Vgs (Max)	±30 V	Gate voltage rating
Power Dissipation (Max)	2.5 W (Ta), 49 W (Tc)	Thermal rating
Operating Temperature Range	-55°C ~ 150°C (TJ)	Temperature rating
Mounting Type	Surface Mount	Assembly method
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	Physical form factor

Substitute Part Grouping Explanation

Substitution of the FQD5N60CTM_F080 is determined by the following critical parameters:

Electrical Compatibility Criteria:

FET Type: N-Channel topology must be maintained
Drain to Source Voltage (Vdss): Minimum 600 V rating required
Continuous Drain Current (Id): Minimum 2.8 A at 25°C required
Gate Threshold Voltage: Compatible gate drive voltage within ±30 V maximum
On-state Resistance (Rds On): Acceptable for application current levels
Operating Temperature: Full range -55°C to 150°C required

Mechanical Compatibility Criteria:

Mounting Type: Surface mount required
Package / Case: TO-252-3 DPAK form factor required for PCB footprint compatibility

The identified substitute parts are grouped into two categories:

Parametric Equivalent: FQD5N60CTM maintains identical electrical specifications and is the direct equivalent, differing only in packaging configuration (Cut Tape & Digi-Reel versus the original F080 variant).

Similar Substitutes: STD3N62K3 and STD4N62K3 (STMicroelectronics SuperMESH3™ series) provide functional alternatives with voltage ratings of 620 V (exceeding the 600 V requirement) and comparable on-state resistance characteristics, maintaining the same DPAK package form factor.

Parameter Comparison

Parameter	FQD5N60CTM_F080 (Main)	FQD5N60CTM (Equivalent)	STD3N62K3 (Substitute)	STD4N62K3 (Substitute)
Manufacturer	onsemi	onsemi	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	620	620
Id @ 25°C (A)	2.8	2.8	2.7	3.8
Rds On (Max) @ Vgs 10V (Ω)	2.5 @ 1.4 A	2.5 @ 1.4 A	2.5 @ 1.4 A	1.95 @ 1.9 A
Vgs(th) (Max) (V)	4 @ 250 µA	4 @ 250 µA	4.5 @ 50 µA	4.5 @ 50 µA
Vgs (Max) (V)	±30	±30	±30	±30
Power Dissipation (Max) (W)	2.5 (Ta), 49 (Tc)	2.5 (Ta), 49 (Tc)	45 (Tc)	70 (Tc)
Operating Temperature (°C)	-55 ~ 150	-55 ~ 150	-55 ~ 150	-55 ~ 150
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FQD5N60CTM (Parametric Equivalent): This part is the direct electrical and mechanical equivalent of the FQD5N60CTM_F080. It maintains all specified parameters identically and is classified as Active product status, ensuring long-term availability. This part is ROHS3 compliant and is the preferred replacement for obsolete stock management and new designs.

STD3N62K3 (Similar Substitute): This STMicroelectronics part provides functional substitution with a 620 V Vdss rating (20 V margin above the 600 V requirement) and identical 2.5 Ω on-state resistance. The continuous drain current is 2.7 A, which is 0.1 A below the original specification but remains within acceptable tolerance for most applications. The part is ROHS3 compliant and Active status. Gate threshold voltage is 4.5 V, requiring verification of gate drive circuit compatibility.

STD4N62K3 (Similar Substitute): This STMicroelectronics part provides enhanced performance with 620 V Vdss rating and 3.8 A continuous drain current (1.0 A above the original specification). On-state resistance is reduced to 1.95 Ω at 1.9 A, providing lower conduction losses. Power dissipation capability is increased to 70 W (Tc). This part is suitable for applications requiring higher current capacity or improved thermal performance. The part is ROHS3 compliant and Active status. Gate threshold voltage is 4.5 V, requiring verification of gate drive circuit compatibility.

All substitute parts maintain the same DPAK package form factor, ensuring PCB footprint compatibility without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can FQD5N60CTM be used as a direct replacement for FQD5N60CTM_F080?

A: Yes. FQD5N60CTM is the parametric equivalent with identical electrical specifications (600 V, 2.8 A, 2.5 Ω Rds On) and the same TO-252AA DPAK package. The difference is packaging configuration (Cut Tape & Digi-Reel versus F080 variant). Both are N-Channel MOSFETs with identical gate drive requirements and thermal ratings.

Q: What are the key differences between the onsemi and STMicroelectronics substitutes?

A: The STMicroelectronics STD3N62K3 and STD4N62K3 parts use SuperMESH3™ technology versus the onsemi QFET® technology. Both maintain the same DPAK package and ±30 V gate voltage rating. The STMicroelectronics parts have 620 V Vdss (versus 600 V), slightly higher gate threshold voltage (4.5 V versus 4 V), and different gate charge characteristics. STD4N62K3 offers higher current capacity (3.8 A) and lower on-state resistance (1.95 Ω).

Q: Are all substitute parts ROHS3 compliant?

A: FQD5N60CTM, STD3N62K3, and STD4N62K3 are all ROHS3 compliant. The original FQD5N60CTM_F080 RoHS status is not specified in the provided data.

Q: Do the STMicroelectronics substitutes require gate drive circuit modifications?

A: The STMicroelectronics parts have a gate threshold voltage of 4.5 V (versus 4 V for the onsemi parts). Gate drive circuits designed for the original 4 V threshold will function with the 4.5 V threshold, but the gate drive voltage margin is reduced. Verify that your gate drive circuit provides sufficient voltage above 4.5 V for reliable switching.

Q: Can STD4N62K3 be used in place of STD3N62K3?

A: Yes, STD4N62K3 is a higher-performance variant with increased current capacity (3.8 A versus 2.7 A) and lower on-state resistance (1.95 Ω versus 2.5 Ω). It maintains the same 620 V Vdss rating, DPAK package, and gate voltage specifications. STD4N62K3 is suitable for applications requiring higher current handling or improved thermal performance.

Q: Are all parts available in the same package form factor?

A: Yes. All parts (FQD5N60CTM_F080, FQD5N60CTM, STD3N62K3, and STD4N62K3) use the TO-252-3 DPAK package with 2 leads plus tab. PCB footprints are mechanically compatible without layout modifications.

Q: What is the inventory status of these parts?

A: FQD5N60CTM_F080 has 722 pieces in stock (obsolete status). FQD5N60CTM has 20,400 pieces available (active status). STD3N62K3 has 15,757 pieces available (active status). STD4N62K3 has 15,643 pieces available (active status).

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