FQD2N80TM N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQD2N80TM is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with a continuous drain current of 1.8A at 25°C. This device is packaged in a Surface Mount TO-252AA (DPAK) configuration and is classified as obsolete. Due to its obsolete product status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

FQD2N80TM

onsemiIn Stock: 20879FQD2N80TM Datasheet

Current PartRFQ

STD7NM80

STMicroelectronicsIn Stock: 32819STD7NM80 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FQD2N80TM are identified based on strict electrical and mechanical parameter compatibility. The following criteria determine substitution eligibility:

Primary Matching Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 800V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Package Type: Must be Surface Mount DPAK (TO-252-3)
• Operating Temperature Range: Must encompass -55°C to 150°C

Secondary Compatibility Criteria:

• Continuous Drain Current (Id): Substitute must meet or exceed 1.8A
• Gate Threshold Voltage: Must be compatible with 5V @ 250µA specification
• Maximum Gate Charge: Must not significantly exceed 15nC @ 10V to maintain gate drive compatibility
• Input Capacitance: Must remain within acceptable range for existing gate drive circuits

The STD7NM80 from STMicroelectronics meets all primary and secondary criteria, making it a direct functional substitute for the obsolete FQD2N80TM.

Parameter Comparison

Engineering Selection Recommendations

STD7NM80 as Primary Substitute:

The STD7NM80 is the recommended substitute for the obsolete FQD2N80TM based on the following engineering factors:

1. Electrical Compatibility: The STD7NM80 maintains identical Vdss (800V) and Vgs(th) (5V @ 250µA) specifications. The continuous drain current rating of 6.5A exceeds the original 1.8A requirement, providing design margin. The on-resistance of 1.05Ohm at 3.25A, 10V is superior to the original 6.3Ohm specification, resulting in lower power dissipation in equivalent operating conditions.

2. Package Compatibility: Both devices utilize the identical TO-252-3 DPAK Surface Mount package, enabling direct PCB footprint compatibility without layout modifications.

3. Thermal and Operating Range: The STD7NM80 supports the full operating temperature range of -55°C to 150°C (TJ), matching the original specification. Enhanced power dissipation capability (90W Tc) provides thermal margin for demanding applications.

4. Regulatory Compliance: The STD7NM80 maintains ROHS3 compliance and REACH Unaffected status, consistent with the original part. Both devices carry EAR99 ECCN classification.

5. Product Status: The STD7NM80 is classified as Active, ensuring long-term availability and continued manufacturing support, eliminating obsolescence risk associated with the FQD2N80TM.

6. Gate Drive Compatibility: Gate charge specification increases from 15nC to 18nC, representing a 20% increase. Input capacitance increases from 550pF to 620pF. These parameter shifts remain within acceptable tolerance for standard gate drive circuits designed for 800V MOSFETs.

Frequently Asked Questions (FAQ)

Q: Can the STD7NM80 be used as a direct replacement for the FQD2N80TM without circuit modifications?

A: Yes. The STD7NM80 is electrically and mechanically compatible with the FQD2N80TM. Both devices share identical Vdss (800V), Vgs(th) (5V @ 250µA), and package configuration (TO-252-3 DPAK). The STD7NM80 provides superior performance characteristics, including lower on-resistance and higher current rating, making it a drop-in substitute.

Q: What are the key differences between the FQD2N80TM and STD7NM80?

A: The primary differences are: (1) Continuous drain current: STD7NM80 rated at 6.5A versus FQD2N80TM at 1.8A; (2) On-resistance: STD7NM80 at 1.05Ohm versus FQD2N80TM at 6.3Ohm; (3) Power dissipation: STD7NM80 at 90W (Tc) versus FQD2N80TM at 50W (Tc); (4) Gate charge: STD7NM80 at 18nC versus FQD2N80TM at 15nC; (5) Product status: STD7NM80 is Active while FQD2N80TM is Obsolete.

Q: Are there any gate drive circuit considerations when substituting the STD7NM80 for the FQD2N80TM?

A: Gate charge increases from 15nC to 18nC, and input capacitance increases from 550pF to 620pF. These increases are modest and remain compatible with standard gate drive circuits designed for 800V MOSFETs. Existing gate drive designs require no modification.

Q: Is the STD7NM80 available in the same packaging as the FQD2N80TM?

A: Yes. Both devices are packaged in TO-252-3 DPAK (2 Leads + Tab) Surface Mount configuration, designated as SC-63. PCB footprints are identical, enabling direct component substitution without layout changes.

Q: What is the inventory status of the STD7NM80?

A: The STD7NM80 is classified as Active with 32,800 pieces in stock as new original inventory, ensuring reliable long-term availability.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the FQD2N80TM and STD7NM80 are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

Q: Can the STD7NM80 handle higher current applications than the original FQD2N80TM?

A: Yes. The STD7NM80 is rated for 6.5A continuous drain current compared to 1.8A for the FQD2N80TM. This higher current rating provides design flexibility for applications requiring increased current capacity while maintaining the same 800V voltage rating.