FQD2N60CTF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQD2N60CTF is an N-Channel 600V MOSFET manufactured by onsemi in the QFET® series, housed in a TO-252AA (DPAK) surface mount package. This device is rated for 1.9A continuous drain current at 25°C and 2.5W power dissipation at ambient temperature. The part is currently listed as obsolete, necessitating identification of equivalent and substitute components for ongoing applications and new designs.

Substiute Parts

FQD2N60CTF
onsemiIn Stock: 4438FQD2N60CTF Datasheet
FQD2N60CTF
Current Part
FQD2N60CTM
onsemiIn Stock: 55147FQD2N60CTM Datasheet
FQD2N60CTM
Parametric Equivalent
AOD2N60
Alpha & Omega Semiconductor Inc.In Stock: 6903AOD2N60 Datasheet
AOD2N60
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AOD2N60A
Alpha & Omega Semiconductor Inc.In Stock: 6362AOD2N60A Datasheet
AOD2N60A
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STD2HNK60Z
STMicroelectronicsIn Stock: 3504STD2HNK60Z Datasheet
STD2HNK60Z
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 1.9 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ 950mA, 10V 4.7 Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 12 nC
Maximum Gate Voltage (Vgs) ±30 V
Input Capacitance (Ciss) @ 25V 235 pF
Power Dissipation (Max) @ Ta 2.5 W
Power Dissipation (Max) @ Tc 44 W
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-252-3, DPAK Surface Mount
Moisture Sensitivity Level (MSL) 1 Unlimited

Substitute Part Grouping Explanation

Substitution of the FQD2N60CTF is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 600V minimum
  • Continuous Drain Current (Id): 1.9A or greater at 25°C
  • Drive Voltage: 10V gate drive capability
  • Package Type: TO-252-3 DPAK surface mount configuration
  • Operating Temperature Range: -55°C to 150°C or equivalent
  • Gate Threshold Voltage (Vgs(th)): 4V to 4.5V range
  • Maximum Gate Voltage (Vgs): ±30V

Parametric Equivalence Classification:

Direct Parametric Equivalent: FQD2N60CTM matches all electrical specifications identically to the main part, with identical Vdss, Id, Rds On, gate charge, and capacitance values. This part is manufactured by onsemi in the same QFET® series and maintains active product status.

Similar Substitutes: AOD2N60, AOD2N60A, and STD2HNK60Z provide functional substitution with minor parameter variations. These parts exceed the minimum current rating (2A vs. 1.9A), maintain 600V Vdss, and operate within the specified temperature range. Rds On values remain within acceptable tolerance (4.4Ohm to 4.8Ohm), and all devices are housed in identical TO-252-3 DPAK packages.

Parameter Comparison

Parameter FQD2N60CTF (Main) FQD2N60CTM AOD2N60 AOD2N60A STD2HNK60Z Unit
Manufacturer onsemi onsemi Alpha & Omega Alpha & Omega STMicroelectronics
Vdss 600 600 600 600 600 V
Id @ 25°C 1.9 1.9 2 2 2 A (Tc)
Rds On (Max) @ 10V 4.7 4.7 4.4 4.7 4.8 Ohm
Vgs(th) @ 250µA 4 4 4.5 4.5 4.5 V
Gate Charge (Qg) @ 10V 12 12 11 11 15 nC
Ciss @ 25V 235 235 325 295 280 pF
Vgs (Max) ±30 ±30 ±30 ±30 ±30 V
Operating Temperature -55 to 150 -55 to 150 -50 to 150 -50 to 150 -55 to 150 °C (TJ)
Package TO-252AA TO-252AA TO-252 TO-252 DPAK
Product Status Obsolete Active Not For New Designs Not For New Designs Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement in Existing Designs:

FQD2N60CTM is the primary substitute for FQD2N60CTF. This part is manufactured by onsemi, maintains identical electrical specifications across all critical parameters, and carries active product status. The FQD2N60CTM is ROHS3 compliant and provides the most direct functional equivalence with no design modifications required.

For New Design Implementation:

STD2HNK60Z manufactured by STMicroelectronics is recommended for new designs. This device maintains 600V Vdss and 2A continuous drain current, operates across the full -55°C to 150°C temperature range, and carries active product status. The STD2HNK60Z is ROHS3 compliant and part of the SuperMESH™ series, providing enhanced performance characteristics.

For Applications with Relaxed Current Requirements:

AOD2N60 and AOD2N60A from Alpha & Omega Semiconductor Inc. provide functional substitution with higher current ratings (2A vs. 1.9A). Both devices maintain 600V Vdss and TO-252 DPAK packaging. These parts are marked as "Not For New Designs" and should be used only for legacy system maintenance or where existing inventory is available.

Compliance Considerations:

All substitute parts listed maintain REACH Unaffected status and ECCN EAR99 classification, matching the regulatory profile of the original FQD2N60CTF. Moisture Sensitivity Level (MSL) is 1 (Unlimited) across all alternatives, indicating no special moisture handling requirements.

Frequently Asked Questions (FAQ)

Q: Can FQD2N60CTM be used as a direct replacement for FQD2N60CTF without circuit modifications?

A: Yes. FQD2N60CTM is a parametric equivalent with identical Vdss (600V), Id (1.9A), Rds On (4.7Ohm @ 10V), gate charge (12nC), and input capacitance (235pF). Both devices operate across -55°C to 150°C and use identical TO-252AA packaging. No circuit modifications are required.

Q: What is the difference between the Alpha & Omega AOD2N60 and AOD2N60A?

A: Both devices share 600V Vdss and 2A continuous drain current ratings. The primary differences are Rds On (4.4Ohm for AOD2N60 vs. 4.7Ohm for AOD2N60A) and input capacitance (325pF for AOD2N60 vs. 295pF for AOD2N60A). Both are marked "Not For New Designs" and are suitable only for legacy applications.

Q: Why is STD2HNK60Z recommended for new designs?

A: STD2HNK60Z carries active product status, is ROHS3 compliant, and maintains the full -55°C to 150°C operating temperature range. The device provides 600V Vdss and 2A continuous drain current with 4.8Ohm Rds On, exceeding the original part's current capability while maintaining electrical compatibility.

Q: Are all substitute parts available in the same package configuration?

A: Yes. All listed substitutes use TO-252-3 DPAK surface mount packaging, which is mechanically and electrically compatible with the original FQD2N60CTF. Pin configurations and thermal characteristics remain consistent across all alternatives.

Q: What is the significance of the "Not For New Designs" status on AOD2N60 and AOD2N60A?

A: This designation indicates that Alpha & Omega Semiconductor Inc. does not recommend these parts for new product development. These devices should be used only for replacement in existing systems or where legacy inventory is available. For new designs, FQD2N60CTM or STD2HNK60Z are preferred alternatives.

Q: Do all substitute parts meet the same regulatory requirements as FQD2N60CTF?

A: Yes. All listed substitutes maintain REACH Unaffected status, ECCN EAR99 classification, and MSL 1 (Unlimited) moisture sensitivity rating, matching the regulatory profile of the original part.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) values range from 11nC to 15nC across all alternatives. FQD2N60CTF and FQD2N60CTM both specify 12nC, while STD2HNK60Z specifies 15nC. Higher gate charge requires slightly longer switching times but remains within acceptable tolerance for most applications operating at standard switching frequencies.

Q: Can input capacitance variations impact circuit design?

A: Input capacitance (Ciss) ranges from 235pF to 325pF across the substitute parts. FQD2N60CTF and FQD2N60CTM both specify 235pF. Higher capacitance values in AOD2N60 (325pF) and AOD2N60A (295pF) may require gate drive circuit adjustments in high-frequency applications but remain compatible with standard gate driver designs.

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