FQD19N10TM_F080 Equivalent & Substitute Parts

Part Overview

The FQD19N10TM_F080 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 15.6A continuous drain current at 25°C. This device is packaged in TO-252-3 (DPAK) surface mount configuration and is part of the QFET® series. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	15.6	A (Tc)
On-Resistance (Rds On) @ Id, Vgs	100	mOhm @ 7.8A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	25	nC @ 10V
Input Capacitance (Ciss) @ Vds	780	pF @ 25V
Maximum Gate Voltage (Vgs)	±25	V
Power Dissipation (Max)	2.5 / 50	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the FQD19N10TM_F080 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must meet or exceed 15.6A at 25°C
On-Resistance (Rds On): Lower values indicate improved performance; values at or below 100mOhm @ 10V are preferred
Package Type: TO-252-3 (DPAK) surface mount configuration required for mechanical compatibility
Gate Threshold Voltage (Vgs(th)): Operational range compatibility with drive circuits
Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

Gate Charge (Qg): Affects switching speed and drive circuit requirements
Input Capacitance (Ciss): Influences gate drive current demands
Maximum Gate Voltage (Vgs): Must accommodate circuit drive voltage levels

The substitute parts listed below meet the primary electrical requirements while maintaining package compatibility. Variations in secondary parameters reflect different manufacturing technologies and design approaches across manufacturers.

Parameter Comparison

Parameter	FQD19N10TM_F080	NVD6416ANLT4G-VF01	AOD2922	AOD478	AUIRLR3410TR	BUK7275-100A,118	DMN10H100SK3-13	STD15NF10T4	ZXMN10A25KTC
Manufacturer	onsemi	onsemi	Alpha & Omega	Alpha & Omega	International Rectifier	Nexperia USA	Diodes Inc.	STMicroelectronics	Diodes Inc.
Vdss (V)	100	100	100	100	100	100	100	100	100
Id @ 25°C (A)	15.6 (Tc)	19 (Tc)	7 (Tc)	11 (Tc)	17 (Tc)	21.7 (Tc)	18 (Tc)	23 (Tc)	4.2 (Ta)
Rds On (mOhm) @ 10V	100 @ 7.8A	74 @ 19A	140 @ 5A	140 @ 4.5A	105 @ 10A	75 @ 13A	80 @ 3.3A	65 @ 12A	125 @ 2.9A
Vgs(th) (V) @ 250µA	4	2.2	2.7	2.8	2	4	3	4	4
Qg (nC) @ 10V	25	40	10	13	34	Not specified	25.2	40	17.16
Ciss (pF) @ 25V or 50V	780 @ 25V	1000 @ 25V	310 @ 50V	540 @ 50V	800 @ 25V	1210 @ 25V	1172 @ 50V	870 @ 25V	859 @ 50V
Vgs (Max) (V)	±25	±20	±20	±20	±16	±20	±20	±20	±20
Power Dissipation (W)	50 (Tc)	71 (Tc)	17 (Tc)	45 (Tc)	79 (Tc)	89 (Tc)	37 (Tc)	70 (Tc)	2.11 (Ta)
Operating Temp Range (°C)	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150	-55 to 175	-55 to 150
Package	TO-252-3 (DPAK)	DPAK-3	TO-252 (DPAK)	TO-252 (DPAK)	DPAK	DPAK	TO-252-3	DPAK	TO-252-3
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Obsolete	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
AEC-Q101 Qualified	No	Yes	No	No	No	Yes	No	No	No

Engineering Selection Recommendations

Direct Substitutes (Highest Compatibility):

The following parts provide electrical performance at or above the FQD19N10TM_F080 specification while maintaining TO-252-3 (DPAK) package compatibility:

NVD6416ANLT4G-VF01 (onsemi): Rated for 19A continuous drain current with 74mOhm on-resistance. Exceeds current rating by 22% and improves on-resistance by 26%. Qualified to AEC-Q101 automotive standard and ROHS3 compliant. Operating temperature range extends to 175°C. Status: Not For New Designs.

DMN10H100SK3-13 (Diodes Incorporated): Rated for 18A continuous drain current with 80mOhm on-resistance. Exceeds current rating by 15% and improves on-resistance by 20%. ROHS3 compliant. Operating temperature range matches original at 150°C maximum. Status: Active.

STD15NF10T4 (STMicroelectronics): Rated for 23A continuous drain current with 65mOhm on-resistance. Exceeds current rating by 47% and improves on-resistance by 35%. ROHS3 compliant. Operating temperature range extends to 175°C. Status: Active.

Secondary Substitutes (Acceptable with Design Review):

AUIRLR3410TR (International Rectifier): Rated for 17A continuous drain current with 105mOhm on-resistance. Exceeds current rating by 9% with comparable on-resistance. HEXFET® series technology. Status: Active.

BUK7275-100A,118 (Nexperia USA): Rated for 21.7A continuous drain current with 75mOhm on-resistance. Exceeds current rating by 39% and improves on-resistance by 25%. Qualified to AEC-Q101 automotive standard and ROHS3 compliant. Status: Obsolete.

Limited Substitutes (Current Rating Below Original):

AOD2922 (Alpha & Omega Semiconductor): Rated for 7A continuous drain current. Current rating is 55% below original specification. Suitable only for applications with reduced current requirements. Status: Active.

AOD478 (Alpha & Omega Semiconductor): Rated for 11A continuous drain current. Current rating is 29% below original specification. Suitable for applications with reduced current requirements. Status: Active.

ZXMN10A25KTC (Diodes Incorporated): Rated for 4.2A continuous drain current. Current rating is 73% below original specification. Not suitable as direct substitute. Status: Active.

Compliance Considerations:

For applications requiring automotive qualification, NVD6416ANLT4G-VF01 and BUK7275-100A,118 are AEC-Q101 qualified. All recommended active substitutes are ROHS3 compliant. The original FQD19N10TM_F080 is obsolete; active alternatives are preferred for new production.

Frequently Asked Questions (FAQ)

Q: Can I use NVD6416ANLT4G-VF01 as a direct replacement for FQD19N10TM_F080?

A: NVD6416ANLT4G-VF01 meets all electrical requirements with improved current rating (19A vs. 15.6A) and lower on-resistance (74mOhm vs. 100mOhm). Both use TO-252-3 (DPAK) packaging. However, NVD6416ANLT4G-VF01 is marked "Not For New Designs," indicating onsemi recommends against new applications. For new designs, STD15NF10T4 or DMN10H100SK3-13 are preferred active alternatives.

Q: What is the primary difference between the substitute parts listed?

A: The substitute parts vary in continuous drain current rating (4.2A to 23A), on-resistance (65mOhm to 140mOhm), and product status (Active, Obsolete, or Not For New Designs). All maintain 100V Vdss rating and TO-252-3 package compatibility. Selection depends on application current requirements and design phase (new vs. legacy support).

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts (AOD2922, AOD478, DMN10H100SK3-13, STD15NF10T4, ZXMN10A25KTC) are ROHS3 compliant. NVD6416ANLT4G-VF01 and BUK7275-100A,118 are also ROHS3 compliant. The original FQD19N10TM_F080 compliance status is not specified in available documentation.

Q: Which substitute offers the best on-resistance performance?

A: STD15NF10T4 provides the lowest on-resistance at 65mOhm @ 12A, 10V, representing a 35% improvement over the original 100mOhm specification. This reduces conduction losses and heat dissipation in switching applications.

Q: Can I use AOD2922 or AOD478 in my application?

A: AOD2922 (7A) and AOD478 (11A) have continuous drain current ratings below the original 15.6A specification. These are suitable only if your application current requirement is lower than the original design. Verify actual circuit current demands before substitution.

Q: What is the significance of AEC-Q101 qualification?

A: AEC-Q101 qualification indicates the device meets automotive industry reliability and quality standards. NVD6416ANLT4G-VF01 and BUK7275-100A,118 are AEC-Q101 qualified, making them suitable for automotive applications. Non-qualified parts may not meet automotive procurement requirements.

Q: How does gate charge (Qg) affect my circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge (40nC for NVD6416ANLT4G-VF01 and STD15NF10T4 vs. 25nC for original) requires higher gate drive current or longer switching times. Lower gate charge (10nC for AOD2922) reduces drive circuit demands. Verify gate driver capability before substitution.

Q: Why do some parts show different temperature ranges?

A: The original FQD19N10TM_F080 operates to 150°C maximum junction temperature. Several substitutes (NVD6416ANLT4G-VF01, AOD2922, AOD478, AUIRLR3410TR, STD15NF10T4, BUK7275-100A,118) extend to 175°C, providing additional thermal margin. DMN10H100SK3-13 and ZXMN10A25KTC match the original 150°C limit.

Q: Is package compatibility guaranteed across all substitutes?

A: All listed substitutes use TO-252-3 (DPAK) or equivalent surface mount packaging (DPAK-3, TO-252). These are mechanically and electrically compatible for PCB mounting. Verify footprint dimensions with component datasheets for specific layout requirements.

Q: Which substitute should I choose for new product designs?

A: For new designs, select from active status parts: STD15NF10T4, DMN10H100SK3-13, AOD2922, AOD478, AUIRLR3410TR, or ZXMN10A25KTC. STD15NF10T4 and DMN10H100SK3-13 provide the best performance match to the original specification with current ratings of 23A and 18A respectively. For automotive applications, NVD6416ANLT4G-VF01 (despite "Not For New Designs" status) or BUK7275-100A,118 offer AEC-Q101 qualification.

Q: What should I verify before finalizing a substitution?

A: Confirm the substitute meets minimum continuous drain current for your application, verify gate drive voltage compatibility (Vgs range), check operating temperature requirements, confirm package footprint compatibility, and validate on-resistance impact on circuit power dissipation. Review complete datasheets for all electrical and thermal characteristics.

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