FQB9P25TM MOSFET P-Channel 250V 9.4A Equivalent & Substitute Parts

Part Overview

The FQB9P25TM is a P-Channel MOSFET manufactured by onsemi, rated for 250V drain-to-source voltage and 9.4A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts must maintain functional compatibility within the electrical and mechanical constraints of the original specification.

Substiute Parts

FQB9P25TM
onsemiIn Stock: 9691FQB9P25TM Datasheet
FQB9P25TM
Current Part
IRF5210STRLPBF
Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet
IRF5210STRLPBF
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IRF9640STRLPBF
Vishay SiliconixIn Stock: 27977IRF9640STRLPBF Datasheet
IRF9640STRLPBF
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Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 9.4 A (Tc)
Rds On (Max) @ Id, Vgs 620 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10V
Vgs (Max) ±30 V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 25V
Power Dissipation (Max) 3.13 (Ta), 120 (Tc) W
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FQB9P25TM are identified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

  • FET Type: P-Channel topology
  • Package: D2PAK (TO-263-3) surface mount configuration
  • Mounting Type: Surface mount
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • RoHS Compliance: ROHS3 Compliant
  • Moisture Sensitivity: MSL 1 (Unlimited)

Secondary Electrical Compatibility Parameters:

  • Drain to Source Voltage (Vdss): Equal to or greater than 250V
  • Continuous Drain Current (Id): Equal to or greater than 9.4A
  • Gate Charge (Qg): Comparable magnitude for switching performance
  • Input Capacitance (Ciss): Similar range for circuit integration
  • Rds On characteristics: Acceptable for thermal and efficiency requirements

The substitute parts listed below satisfy the mandatory package and compliance requirements. Electrical parameter variations are documented to enable circuit-level assessment.

Parameter Comparison

Parameter FQB9P25TM (onsemi) IRF9640STRLPBF (Vishay Siliconix) IRF5210STRLPBF (Infineon Technologies)
FET Type P-Channel P-Channel P-Channel
Drain to Source Voltage (Vdss) 250 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 9.4 A (Tc) 11 A (Tc) 38 A (Tc)
Rds On (Max) @ Id, Vgs 620 mOhm @ 4.7A, 10V 500 mOhm @ 6.6A, 10V 60 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 5 V @ 250µA 4 V @ 250µA 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10V 44 nC @ 10V 230 nC @ 10V
Vgs (Max) ±30 V ±20 V ±20 V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 25V 1200 pF @ 25V 2780 pF @ 25V
Power Dissipation (Max) 3.13 W (Ta), 120 W (Tc) 3 W (Ta), 125 W (Tc) 3.1 W (Ta), 170 W (Tc)
Operating Temperature -55 to 150 °C (TJ) -55 to 150 °C (TJ) -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK D2PAK
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active Active

Engineering Selection Recommendations

IRF9640STRLPBF (Vishay Siliconix) - Primary Substitute

The IRF9640STRLPBF is the closest electrical equivalent to the FQB9P25TM. It maintains P-Channel topology, D2PAK package configuration, and identical operating temperature range. The device is classified as Active product status, ensuring ongoing availability and supply chain continuity. Vdss rating of 200V is lower than the original 250V specification; circuit design must confirm this voltage margin is acceptable for the application. Continuous drain current of 11A exceeds the 9.4A requirement. Gate charge of 44 nC is comparable to the original 38 nC, supporting similar switching characteristics. Input capacitance of 1200 pF matches the original specification closely. RoHS3 compliance and MSL 1 rating are identical. REACH status is affected; compliance verification is required for regulated markets.

IRF5210STRLPBF (Infineon Technologies) - Secondary Substitute

The IRF5210STRLPBF is a P-Channel MOSFET in D2PAK package with Active product status. This device exhibits significantly higher continuous drain current (38A) and lower Rds On (60 mOhm), indicating superior current handling capability. However, Vdss rating of 100V is substantially lower than the original 250V specification and represents a significant voltage derating. Gate charge of 230 nC is substantially higher than the original 38 nC, indicating increased switching losses and slower switching performance. Input capacitance of 2780 pF is more than double the original specification, affecting circuit timing and gate drive requirements. This substitute is applicable only in applications where voltage stress is limited to 100V or below. RoHS3 compliance and MSL 1 rating are maintained. REACH status is unaffected.

Selection Basis:

Component selection must be based on application voltage requirements, current demands, and switching frequency constraints. The IRF9640STRLPBF is recommended for applications requiring voltage ratings near 200V with moderate current levels. The IRF5210STRLPBF is suitable only for low-voltage applications (100V maximum) where higher current capacity and lower on-resistance provide circuit benefits. Both substitutes maintain compliance certifications and package compatibility with the original FQB9P25TM.

Frequently Asked Questions (FAQ)

Q: Can the IRF9640STRLPBF be used as a direct replacement for the FQB9P25TM in all applications?

A: The IRF9640STRLPBF is mechanically and electrically compatible for applications operating at 200V or below. The 50V reduction in Vdss rating must be evaluated against circuit maximum voltage stress. Gate charge and input capacitance are comparable, supporting similar switching performance. Thermal characteristics are equivalent. Applications requiring the full 250V rating cannot use this substitute without circuit redesign.

Q: What are the key differences between the IRF9640STRLPBF and IRF5210STRLPBF?

A: The IRF9640STRLPBF is rated for 200V with 11A continuous current and 500 mOhm Rds On. The IRF5210STRLPBF is rated for 100V with 38A continuous current and 60 mOhm Rds On. The IRF5210STRLPBF exhibits significantly higher gate charge (230 nC vs. 44 nC) and input capacitance (2780 pF vs. 1200 pF), resulting in slower switching and increased gate drive requirements. Selection depends on voltage and current requirements of the specific application.

Q: Are both substitute parts available in the same D2PAK package as the FQB9P25TM?

A: Both IRF9640STRLPBF and IRF5210STRLPBF are supplied in D2PAK (TO-263-3) surface mount packages, identical to the FQB9P25TM. Pin configuration and mechanical footprint are compatible, enabling direct PCB layout substitution without modification.

Q: What is the impact of higher gate charge in the IRF5210STRLPBF?

A: Gate charge of 230 nC in the IRF5210STRLPBF is substantially higher than the original 38 nC specification. This increases the charge required to switch the device on and off, resulting in higher gate drive current demand and increased switching losses. Gate drive circuits must be evaluated to confirm adequate current sourcing capability at the intended switching frequency.

Q: Are there compliance or regulatory differences between the substitute parts?

A: Both substitutes are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original FQB9P25TM. The IRF9640STRLPBF has REACH status affected, requiring compliance verification for regulated markets. The IRF5210STRLPBF has REACH status unaffected. Both carry EAR99 ECCN classification.

Q: Can the IRF5210STRLPBF be used in applications requiring 250V operation?

A: No. The IRF5210STRLPBF is rated for maximum 100V Vdss. Operation above this voltage rating will result in device failure. This substitute is applicable only to applications where circuit voltage stress does not exceed 100V.

Q: What thermal characteristics should be considered when selecting a substitute?

A: All three devices support identical operating temperature range of -55°C to 150°C (TJ). Power dissipation ratings are comparable: FQB9P25TM 120W (Tc), IRF9640STRLPBF 125W (Tc), and IRF5210STRLPBF 170W (Tc). Thermal management design should account for the specific Rds On value of the selected substitute, as on-resistance directly affects power dissipation at operating current.

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