FQB8P10TM Equivalent & Substitute Parts

Part Overview

The FQB8P10TM is a P-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 8A continuous drain current at 25°C (Tc). The device is housed in a Surface Mount TO-263 (D2PAK) package and is part of the QFET® series. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating packaging and availability constraints.

Substiute Parts

FQB8P10TM

onsemiIn Stock: 1431FQB8P10TM Datasheet

Current PartRFQ

IPB19DP10NMATMA1

Infineon TechnologiesIn Stock: 3002IPB19DP10NMATMA1 Datasheet

MFR RecommendedRFQ

IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQB8P10TM is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V (minimum requirement)
• Current - Continuous Drain (Id) @ 25°C: Must meet or exceed 8A (Tc)
• Drive Voltage: 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA or compatible threshold
• Operating Temperature Range: -55°C ~ 175°C (TJ) or compatible
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB or equivalent
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitution Logic: Substitute parts must maintain P-Channel MOSFET topology with 100V Vdss rating and support continuous drain current at or above 8A under thermal conditions. Package compatibility with TO-263 (D2PAK) form factor is required for direct board-level replacement. Compliance certifications (RoHS3, MSL-1) must be maintained. Gate charge, input capacitance, and on-resistance characteristics may vary within acceptable ranges for the application circuit, provided the substitute does not introduce circuit instability or thermal management issues.

Parameter Comparison

Engineering Selection Recommendations

IPB19DP10NMATMA1 (Infineon Technologies - MFR Recommended): The IPB19DP10NMATMA1 is classified as an MFR recommended substitute and carries Active product status. This device maintains the 100V Vdss rating and exceeds the 8A continuous drain current requirement with 13.8A (Tc) capability. The part is housed in PG-TO263-3 package, which is mechanically and electrically compatible with the original TO-263 (D2PAK) form factor. RoHS3 compliance and MSL-1 rating are maintained. The improved on-resistance (185mOhm @ 12A, 10V) and higher power dissipation capability (83W Tc) provide enhanced thermal performance. Gate charge increases to 45 nC, which may require circuit evaluation for switching speed applications. Maximum gate voltage is reduced to ±20V compared to the original ±30V specification.

IRF5210STRLPBF (Infineon Technologies - Similar Substitute): The IRF5210STRLPBF is classified as a similar substitute with Active product status. This device maintains the 100V Vdss rating and significantly exceeds current requirements with 38A (Tc) continuous drain current. The D2PAK package is directly compatible with the original form factor. RoHS3 compliance and MSL-1 rating are maintained. Superior on-resistance (60mOhm @ 38A, 10V) and substantially higher power dissipation capability (170W Tc) support high-current applications. Gate charge increases substantially to 230 nC, requiring circuit evaluation for switching speed compatibility. Maximum gate voltage is reduced to ±20V. Operating temperature range extends to -55°C ~ 150°C (TJ), which is 25°C lower than the original specification at the upper limit.

Both substitute parts satisfy the core electrical and mechanical requirements for direct replacement. Selection between IPB19DP10NMATMA1 and IRF5210STRLPBF depends on application-specific current demands, switching frequency requirements, and thermal management constraints. The IPB19DP10NMATMA1 provides a closer electrical match to the original FQB8P10TM, while the IRF5210STRLPBF offers enhanced performance for high-current applications.

Frequently Asked Questions (FAQ)

Q: Can the IPB19DP10NMATMA1 be used as a direct replacement for the FQB8P10TM? A: Yes. The IPB19DP10NMATMA1 meets all critical electrical parameters: P-Channel MOSFET topology, 100V Vdss rating, continuous drain current of 13.8A (Tc) exceeding the 8A requirement, 10V drive voltage, and compatible gate threshold voltage. The PG-TO263-3 package is mechanically and electrically compatible with the original TO-263 (D2PAK) form factor. RoHS3 compliance and MSL-1 rating are maintained. Circuit evaluation is required for applications sensitive to increased gate charge (45 nC vs. 15 nC) or reduced maximum gate voltage (±20V vs. ±30V).

Q: Can the IRF5210STRLPBF be used as a direct replacement for the FQB8P10TM? A: Yes. The IRF5210STRLPBF meets all critical electrical parameters: P-Channel MOSFET topology, 100V Vdss rating, continuous drain current of 38A (Tc) significantly exceeding the 8A requirement, 10V drive voltage, and compatible gate threshold voltage. The D2PAK package is directly compatible with the original form factor. RoHS3 compliance and MSL-1 rating are maintained. Circuit evaluation is required for applications sensitive to substantially increased gate charge (230 nC vs. 15 nC), reduced maximum gate voltage (±20V vs. ±30V), or upper operating temperature limit (150°C vs. 175°C).

Q: What are the key differences between the two substitute parts? A: The IPB19DP10NMATMA1 provides a closer electrical match to the FQB8P10TM with 13.8A continuous drain current and 45 nC gate charge. The IRF5210STRLPBF offers significantly higher current capability (38A) and lower on-resistance (60mOhm) at the cost of substantially higher gate charge (230 nC). Selection depends on application current requirements and switching frequency constraints. Both parts maintain 100V Vdss rating, 10V drive voltage, and compatible package form factor.

Q: Are there packaging compatibility concerns with these substitutes? A: The IPB19DP10NMATMA1 uses PG-TO263-3 package and the IRF5210STRLPBF uses D2PAK package. Both are mechanically and electrically compatible with the original TO-263 (D2PAK) form factor and support direct board-level replacement without PCB layout modifications.

Q: What compliance certifications are maintained across all three parts? A: All three parts maintain RoHS3 compliance and MSL-1 (Unlimited) moisture sensitivity level rating. REACH status is unaffected for all parts.

Q: Why is the maximum gate voltage reduced in the substitute parts? A: The FQB8P10TM specifies ±30V maximum gate voltage, while both substitute parts specify ±20V. This is a design characteristic of the substitute devices. Circuit designs must ensure gate drive voltage does not exceed ±20V to prevent device damage.

Q: Are there thermal management differences between the parts? A: The FQB8P10TM dissipates 65W (Tc) maximum. The IPB19DP10NMATMA1 dissipates 83W (Tc) and the IRF5210STRLPBF dissipates 170W (Tc). Higher power dissipation capability in the substitutes provides improved thermal performance for high-current applications. Applications operating near the original 65W limit may benefit from the enhanced thermal characteristics of the substitutes.

Q: What is the impact of increased gate charge on circuit performance? A: Gate charge affects switching speed and driver circuit requirements. The FQB8P10TM specifies 15 nC gate charge. The IPB19DP10NMATMA1 specifies 45 nC and the IRF5210STRLPBF specifies 230 nC. Applications with high switching frequencies or marginal gate driver current capacity require circuit evaluation to ensure adequate gate drive performance with the substitute parts.

Q: Is the operating temperature range difference significant? A: The FQB8P10TM and IPB19DP10NMATMA1 both support -55°C ~ 175°C (TJ) operating range. The IRF5210STRLPBF supports -55°C ~ 150°C (TJ), which is 25°C lower at the upper limit. Applications requiring operation above 150°C must use the FQB8P10TM or IPB19DP10NMATMA1.