FQB7P20TM Equivalent & Substitute Parts

Part Overview

The FQB7P20TM is a P-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 7.3A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and is classified as obsolete. Due to its obsolete status, equivalent substitute parts are necessary for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	FQB7P20TM
Manufacturer	onsemi
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)
Rds On (Max) @ Id, Vgs	690mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	770 pF @ 25 V
Power Dissipation (Max)	3.13W (Ta), 90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the FQB7P20TM is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: P-Channel MOSFET (Metal Oxide technology)
Drain to Source Voltage (Vdss): Minimum 200V required
Continuous Drain Current (Id): Minimum 7.3A at 25°C
Mounting Type: Surface Mount
Package: TO-263 (D2PAK) form factor
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS3 Compliance and MSL Level 1

Secondary Compatibility Parameters:

Gate Charge (Qg): Comparable switching characteristics
Input Capacitance (Ciss): Drive circuit compatibility
Rds On: On-state resistance for thermal and efficiency considerations
Vgs(th): Gate threshold voltage for logic-level compatibility

Substitute parts must satisfy all primary criteria. Secondary parameters are evaluated for circuit performance impact and thermal management requirements.

Parameter Comparison

Parameter	FQB7P20TM (onsemi)	IRF9630SPBF (Vishay Siliconix)	IRF5210STRLPBF (Infineon Technologies)
FET Type	P-Channel	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	200 V	100 V
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)	6.5A (Tc)	38A (Tc)
Rds On (Max) @ Id, Vgs	690mOhm @ 3.65A, 10V	800mOhm @ 3.9A, 10V	60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V	29 nC @ 10 V	230 nC @ 10 V
Vgs (Max)	±30V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	770 pF @ 25 V	700 pF @ 25 V	2780 pF @ 25 V
Power Dissipation (Max)	3.13W (Ta), 90W (Tc)	3W (Ta), 74W (Tc)	3.1W (Ta), 170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	D2PAK
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

IRF9630SPBF (Vishay Siliconix) - Primary Substitute

The IRF9630SPBF is the preferred substitute for the FQB7P20TM. Both devices share identical drain-to-source voltage ratings (200V) and compatible continuous drain current specifications (6.5A versus 7.3A). The IRF9630SPBF maintains the same TO-263 (D2PAK) package form factor, operating temperature range (-55°C to 150°C), and RoHS3 compliance with MSL Level 1. The device is currently in active production status, ensuring long-term availability and supply chain stability. Gate charge and input capacitance characteristics are comparable, supporting equivalent drive circuit implementation. On-state resistance is marginally higher (800mOhm versus 690mOhm), which is acceptable for most applications within the specified current range.

IRF5210STRLPBF (Infineon Technologies) - Limited Substitution

The IRF5210STRLPBF is not a direct substitute for the FQB7P20TM due to insufficient drain-to-source voltage rating (100V versus 200V required). This device is suitable only for applications where the circuit voltage requirement does not exceed 100V. The IRF5210STRLPBF offers significantly higher continuous drain current (38A) and lower on-state resistance (60mOhm), making it applicable to high-current, lower-voltage designs. The device maintains TO-263 (D2PAK) package compatibility, active product status, and full compliance certifications. Gate charge is substantially higher (230 nC), requiring evaluation of drive circuit performance.

Selection Criteria Summary:

For 200V applications: Use IRF9630SPBF
For applications below 100V with higher current requirements: Use IRF5210STRLPBF
All substitute parts maintain RoHS3 compliance, MSL Level 1, and -55°C to 150°C operating temperature range
All substitute parts are in active production, ensuring component availability

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF replace the FQB7P20TM in a 200V circuit?

A: No. The IRF5210STRLPBF has a maximum drain-to-source voltage rating of 100V, which is insufficient for 200V applications. Using this device in a 200V circuit will result in device failure. The IRF9630SPBF is the appropriate substitute for 200V designs.

Q: What is the primary difference between the IRF9630SPBF and FQB7P20TM?

A: Both devices are rated for 200V and share the same TO-263 (D2PAK) package. The main differences are manufacturer (Vishay Siliconix versus onsemi), continuous drain current (6.5A versus 7.3A), and on-state resistance (800mOhm versus 690mOhm). The IRF9630SPBF is currently in active production, whereas the FQB7P20TM is obsolete.

Q: Are the TO-263 (D2PAK) packages physically identical between all three devices?

A: Yes. All three devices use the TO-263-3 D2PAK (2 Leads + Tab) package form factor, ensuring mechanical compatibility on printed circuit boards. Pin assignments and thermal tab placement are identical.

Q: What is the impact of higher gate charge in the IRF5210STRLPBF?

A: The IRF5210STRLPBF has a gate charge of 230 nC compared to 25 nC in the FQB7P20TM. Higher gate charge requires more energy to switch the device and may increase switching losses. Drive circuit design must account for this parameter to ensure adequate gate current and switching speed.

Q: Can I use the IRF9630SPBF in place of the FQB7P20TM without circuit modifications?

A: The IRF9630SPBF is electrically compatible with the FQB7P20TM for most applications. However, the lower continuous drain current (6.5A versus 7.3A) and higher on-state resistance (800mOhm versus 690mOhm) must be evaluated for thermal and efficiency performance in your specific circuit. Thermal analysis is required to confirm adequate heat dissipation.

Q: What compliance certifications apply to all substitute parts?

A: All three devices are RoHS3 compliant, REACH unaffected, and classified as MSL Level 1 (Unlimited moisture sensitivity). All devices carry ECCN EAR99 and HTSUS 8541.29.0095 classifications.

Q: Is the IRF9630SPBF available in the same packaging options as the FQB7P20TM?

A: The IRF9630SPBF is supplied in Tube packaging, whereas the FQB7P20TM was supplied in standard packaging. Both use the TO-263 (D2PAK) component package. Verify packaging requirements with your procurement process.

Q: What is the operating temperature range for all substitute parts?

A: All three devices operate across the same temperature range: -55°C to 150°C junction temperature (TJ). This ensures thermal compatibility across all applications.

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