FQB7P06TM Equivalent & Substitute Parts

Part Overview

The FQB7P06TM is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 7A continuous drain current in a Surface Mount D2PAK package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and production continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating modern component availability.

Substiute Parts

FQB7P06TM

onsemiIn Stock: 1064FQB7P06TM Datasheet

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IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQB7P06TM is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: P-Channel topology
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab) for mechanical and thermal compatibility
• Mounting Type: Surface Mount
• Drain to Source Voltage (Vdss): Equal to or greater than 60V
• Current - Continuous Drain (Id): Equal to or greater than 7A at 25°C
• Vgs(th) (Max) @ Id: 4V @ 250µA or lower for gate drive compatibility
• Operating Temperature Range: Must encompass or exceed -55°C to 175°C

Electrical Performance Considerations:

• Rds On (Max): Lower values indicate improved performance; substitutes with reduced on-resistance provide enhanced efficiency
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values improve switching speed

The IRF5210STRLPBF meets all mandatory compatibility criteria while providing superior electrical performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

IRF5210STRLPBF as Primary Substitute:

The IRF5210STRLPBF is a direct functional substitute for the FQB7P06TM. Both devices share identical package geometry (TO-263-3, D2PAK), gate threshold voltage (4V @ 250µA), and surface mount configuration. The IRF5210STRLPBF exceeds the FQB7P06TM in voltage rating (100V vs. 60V), current capacity (38A vs. 7A), and power dissipation capability (170W Tc vs. 45W Tc).

Product Status Advantage:

The IRF5210STRLPBF carries Active product status from Infineon Technologies, ensuring long-term availability and supply chain continuity. The FQB7P06TM is classified as Obsolete, making the IRF5210STRLPBF the appropriate selection for new designs and production continuity.

Compliance and Certifications:

The IRF5210STRLPBF is RoHS3 Compliant and maintains REACH Unaffected status, consistent with the FQB7P06TM's REACH Unaffected designation. Both devices carry EAR99 ECCN classification and identical HTSUS codes (8541.29.0095), confirming regulatory alignment.

Thermal and Electrical Performance:

The IRF5210STRLPBF provides superior thermal performance with maximum power dissipation of 170W at Tc compared to 45W for the FQB7P06TM. The reduced on-resistance (60 mOhm vs. 410 mOhm) results in lower conduction losses. The maximum gate voltage rating of ±20V for the IRF5210STRLPBF is compatible with the FQB7P06TM's ±25V specification for typical gate drive circuits.

Operating Temperature Consideration:

The IRF5210STRLPBF operates from -55°C to 150°C, which covers the lower end of the FQB7P06TM's -55°C to 175°C range. Applications requiring operation above 150°C require evaluation of alternative substitutes.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF directly replace the FQB7P06TM in existing PCB layouts?

A: Yes. Both devices use identical TO-263-3 D2PAK packaging with the same pin configuration and thermal tab placement. No PCB layout modifications are required.

Q: What are the key electrical differences between these two P-Channel MOSFETs?

A: The IRF5210STRLPBF has higher voltage rating (100V vs. 60V), higher current capacity (38A vs. 7A), and significantly lower on-resistance (60 mOhm vs. 410 mOhm). These differences result in improved efficiency and thermal performance in the substitute device.

Q: Is the gate drive voltage compatible between the two devices?

A: Yes. Both devices have identical gate threshold voltage specifications (4V @ 250µA) and operate with standard 10V gate drive signals. The IRF5210STRLPBF maximum gate voltage is ±20V, which is compatible with typical gate drive circuits designed for the FQB7P06TM's ±25V rating.

Q: What is the impact of higher gate charge in the IRF5210STRLPBF?

A: The IRF5210STRLPBF has gate charge of 230 nC compared to 8.2 nC for the FQB7P06TM. This higher gate charge reflects the larger die size and higher current capacity. Gate drive circuits must supply adequate current to charge the gate within the required switching time. Existing gate drive designs should be evaluated for current capability.

Q: Are there temperature range limitations when substituting the IRF5210STRLPBF?

A: The IRF5210STRLPBF operates from -55°C to 150°C, while the FQB7P06TM operates to 175°C. Applications requiring junction temperatures above 150°C must use alternative substitutes or confirm that the IRF5210STRLPBF meets specific thermal requirements.

Q: What is the moisture sensitivity level for both devices?

A: Both the FQB7P06TM and IRF5210STRLPBF carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions for storage and handling.

Q: Why is the IRF5210STRLPBF recommended over the obsolete FQB7P06TM?

A: The IRF5210STRLPBF is classified as Active product status, ensuring long-term availability and supply chain support. The FQB7P06TM is Obsolete, creating supply risk and potential discontinuation. The IRF5210STRLPBF provides superior electrical performance and thermal capability while maintaining full functional compatibility.

Q: Can the IRF5210STRLPBF be used in applications with lower voltage requirements than 100V?

A: Yes. The IRF5210STRLPBF is rated for 100V maximum drain-to-source voltage, making it suitable for applications operating at 60V or lower. The higher voltage rating provides design margin and does not negatively impact performance in lower voltage applications.