FQB7N60TM Equivalent & Substitute Parts

Part Overview

The FQB7N60TM is an N-Channel 600V MOSFET manufactured by onsemi in the QFET® series, housed in a TO-263 (D2PAK) surface mount package. This device is rated for 7.4A continuous drain current at 25°C and delivers 142W power dissipation at case temperature. The FQB7N60TM is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Suitable alternatives must maintain the 600V drain-source voltage rating, comparable drain current capability, and compatible TO-263 (D2PAK) packaging to ensure direct board-level substitution.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7.4	A (Tc)
Rds On (Max) @ Id, Vgs	1	Ohm @ 3.7A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	38	nC @ 10V
Power Dissipation (Max)	142	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FQB7N60TM is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must support minimum 7.4A at 25°C case temperature
On-State Resistance (Rds On): Must not exceed 1.2 Ohm at rated conditions to maintain thermal performance
Package Type: Must be TO-263 (D2PAK) surface mount for mechanical compatibility
Operating Temperature Range: Must support -55°C to 150°C
RoHS Compliance: ROHS3 compliance required for regulatory alignment

Substitute Parts Identified:

The following parts meet the primary substitution criteria with 600V Vdss rating and TO-263 (D2PAK) packaging:

IRFBC40ASPBF (Vishay Siliconix): 600V, 6.2A, 1.2Ohm Rds On, Active status
IRFBC40ASTRLPBF (Vishay Siliconix): 600V, 6.2A, 1.2Ohm Rds On, Active status, Tape & Reel
IRFBC40ASTRRPBF (Vishay Siliconix): 600V, 6.2A, 1.2Ohm Rds On, Active status, Tape & Reel
IRFBC40SPBF (Vishay Siliconix): 600V, 6.2A, 1.2Ohm Rds On, Active status
IRFBC40STRLPBF (Vishay Siliconix): 600V, 6.2A, 1.2Ohm Rds On, Active status, Tape & Reel
IXTA7N60P (IXYS): 600V, 7A, 1.1Ohm Rds On, Active status
STB6N60M2 (STMicroelectronics): 600V, 4.5A, 1.2Ohm Rds On, Active status

Secondary Consideration Parts (Lower current rating, alternative packaging):

R6004ENJTL (Rohm Semiconductor): 600V, 4A, 980mOhm Rds On, LPTS package
R6004KNJTL (Rohm Semiconductor): 600V, 4A, 980mOhm Rds On, LPTS package, Tape & Reel

Package Variant Note:

SIHD6N62ET1-GE3 (Vishay Siliconix): 620V, 6A, TO-252AA package (not TO-263; different footprint)

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (Ohm)	Qg (nC)	Vgs(th) (V)	Power Diss. (W)	Package	Status
FQB7N60TM	onsemi	600	7.4	1.0	38	5	142 (Tc)	TO-263	Obsolete
IRFBC40ASPBF	Vishay	600	6.2	1.2	42	4	125 (Tc)	TO-263	Active
IRFBC40ASTRLPBF	Vishay	600	6.2	1.2	42	4	125 (Tc)	TO-263	Active
IRFBC40ASTRRPBF	Vishay	600	6.2	1.2	42	4	125 (Tc)	TO-263	Active
IRFBC40SPBF	Vishay	600	6.2	1.2	60	4	130 (Tc)	TO-263	Active
IRFBC40STRLPBF	Vishay	600	6.2	1.2	60	4	130 (Tc)	TO-263	Active
IXTA7N60P	IXYS	600	7.0	1.1	20	5.5	150 (Tc)	TO-263	Active
STB6N60M2	STMicroelectronics	600	4.5	1.2	8	4	60 (Tc)	TO-263	Active
R6004ENJTL	Rohm	600	4.0	0.98	15	4	40 (Tc)	LPTS	Active
R6004KNJTL	Rohm	600	4.0	0.98	10.2	5	58 (Tc)	LPTS	Active
SIHD6N62ET1-GE3	Vishay	620	6.0	0.9	34	4	78 (Tc)	TO-252	Active

Engineering Selection Recommendations

Primary Substitutes (Direct TO-263 Replacement):

The IRFBC40 series from Vishay Siliconix (IRFBC40ASPBF, IRFBC40ASTRLPBF, IRFBC40ASTRRPBF, IRFBC40SPBF, IRFBC40STRLPBF) are active production parts with 600V Vdss and TO-263 (D2PAK) packaging. These devices deliver 6.2A continuous drain current, which is lower than the FQB7N60TM's 7.4A rating. Selection depends on application current requirements. All IRFBC40 variants are ROHS3 compliant and rated for -55°C to 150°C operation. Packaging variants include tube (ASPBF, SPBF) and tape & reel (ASTRLPBF, ASTRRPBF, STRLPBF) options.

High-Current Alternative (Comparable Current Rating):

The IXTA7N60P from IXYS is an active production part rated for 7A continuous drain current, closely matching the FQB7N60TM's 7.4A specification. This device features 1.1Ohm Rds On and 150W power dissipation at case temperature. The IXTA7N60P is ROHS3 compliant, operates across -55°C to 150°C, and uses TO-263 (D2PAK) packaging. Gate charge is significantly lower at 20nC compared to the original part's 38nC.

Lower-Current Alternative (Reduced Thermal Load):

The STB6N60M2 from STMicroelectronics is an active production part with 600V Vdss and TO-263 (D2PAK) packaging. This device is rated for 4.5A continuous drain current and 60W power dissipation, suitable for applications with reduced current demands. The STB6N60M2 is ROHS3 compliant and operates across -55°C to 150°C.

Secondary Alternatives (Non-Standard Packaging):

The R6004ENJTL and R6004KNJTL from Rohm Semiconductor feature 600V Vdss and 4A continuous drain current in LPTS surface mount packaging (not TO-263). These parts are suitable only if board layout accommodates the alternative footprint. Both are ROHS3 compliant and REACH unaffected.

The SIHD6N62ET1-GE3 from Vishay Siliconix features 620V Vdss and 6A continuous drain current in TO-252AA packaging. This part is not a direct footprint replacement due to different package geometry and is suitable only for redesigned layouts.

Compliance and Availability:

All recommended substitutes are active production parts with ROHS3 compliance and -55°C to 150°C operating temperature range. Inventory availability varies by part number and packaging option. Selection should prioritize current rating alignment with application requirements and packaging compatibility with existing board designs.

Frequently Asked Questions (FAQ)

Q: Can I directly replace FQB7N60TM with IRFBC40ASPBF on my PCB?

A: Yes, the IRFBC40ASPBF is a direct TO-263 (D2PAK) footprint replacement. However, the continuous drain current rating is 6.2A compared to the FQB7N60TM's 7.4A. Verify that your application current does not exceed 6.2A at 25°C case temperature. On-state resistance is comparable at 1.2Ohm versus 1.0Ohm, resulting in slightly higher conduction losses.

Q: What is the difference between IRFBC40ASPBF and IRFBC40ASTRLPBF?

A: Both parts are electrically identical with 600V Vdss, 6.2A continuous drain current, and 1.2Ohm Rds On. The primary difference is packaging: ASPBF is supplied in tube format, while ASTRLPBF is supplied in tape & reel format. Select based on your procurement and assembly process requirements.

Q: Is IXTA7N60P a better choice than IRFBC40ASPBF?

A: The IXTA7N60P offers 7A continuous drain current, closer to the FQB7N60TM's 7.4A rating, and features lower gate charge at 20nC. However, gate threshold voltage is higher at 5.5V. Selection depends on whether your circuit requires higher current capability or lower gate charge for faster switching. Both are active production parts with identical operating temperature range and ROHS3 compliance.

Q: Can I use R6004KNJTL as a substitute?

A: The R6004KNJTL has 600V Vdss but is rated for only 4A continuous drain current, significantly lower than the FQB7N60TM's 7.4A. Additionally, it uses LPTS packaging instead of TO-263 (D2PAK), requiring PCB redesign. This part is suitable only for applications with reduced current requirements and modified board layouts.

Q: Why is SIHD6N62ET1-GE3 listed as a secondary option?

A: The SIHD6N62ET1-GE3 features 620V Vdss and 6A continuous drain current, but uses TO-252AA packaging instead of TO-263 (D2PAK). This different footprint prevents direct board-level substitution without PCB redesign. It is listed for reference only if layout modifications are acceptable.

Q: What does "Active" product status mean for substitutes?

A: Active status indicates the part is in current production and available from distributors. The FQB7N60TM is classified as obsolete, meaning it is no longer manufactured. All recommended substitutes are active production parts, ensuring long-term availability and supply chain continuity.

Q: Are all substitute parts ROHS3 compliant?

A: Yes, all substitute parts listed in this reference are ROHS3 compliant, matching the FQB7N60TM's regulatory status. This ensures compatibility with RoHS-restricted applications and procurement requirements.

Q: How do I select between tube and tape & reel packaging options?

A: Tube packaging (ASPBF, SPBF) is suitable for manual assembly or small-volume production. Tape & reel packaging (ASTRLPBF, ASTRRPBF, STRLPBF) is designed for automated pick-and-place assembly and high-volume manufacturing. Select based on your production process and volume requirements.

Q: What is the impact of different Rds On values on circuit performance?

A: On-state resistance directly affects conduction losses and heat dissipation. The FQB7N60TM has 1.0Ohm Rds On, while most IRFBC40 variants have 1.2Ohm. At 7.4A, this represents an additional 0.2Ohm × (7.4A)² = 10.95W of dissipated power. Verify thermal design accommodates this increase, or select IXTA7N60P (1.1Ohm) for lower losses.

Q: Can gate charge differences affect my circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. The FQB7N60TM has 38nC, while IRFBC40 variants have 42nC or 60nC. Higher gate charge requires more driver current or longer switching times. The IXTA7N60P has significantly lower gate charge at 20nC, enabling faster switching with lower driver requirements.

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