FQB6N60TM N-Channel 600V MOSFET Equivalent & Substitute Parts

Part Overview

The FQB6N60TM is an N-Channel 600V MOSFET manufactured by onsemi in the QFET® series, housed in a TO-263 (D2PAK) surface mount package. This device is rated for 6.2A continuous drain current at 25°C and features a maximum on-resistance of 1.5Ω at 3.1A and 10V gate-source voltage. The FQB6N60TM is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain compatibility across voltage ratings, package configuration, and thermal characteristics to ensure functional equivalence in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6.2	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	1.5	Ω @ 3.1A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	25	nC @ 10V
Maximum Gate-Source Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss Max) @ Vds	1000	pF @ 25V
Power Dissipation (Max)	3.13 (Ta), 130 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263-3 (D2PAK)	Surface Mount
Moisture Sensitivity Level (MSL)	1	Unlimited

Substitute Part Grouping Explanation

Substitution of the FQB6N60TM is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): Must equal 600V
Package Type: Must be TO-263 (D2PAK) surface mount configuration
FET Type: Must be N-Channel MOSFET
Gate-Source Voltage Rating (Vgs Max): Must be ±30V or greater
Operating Temperature Range: Must support -55°C to 150°C minimum
Moisture Sensitivity Level: Must be MSL 1 (Unlimited) or equivalent

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): Substitute must meet or exceed 6.2A at 25°C
On-Resistance (Rds On): Lower values indicate improved performance; substitutes with Rds On ≤ 1.5Ω are functionally equivalent or superior
Gate Charge (Qg): Lower values reduce switching losses; substitutes with Qg ≤ 25nC are acceptable
Input Capacitance (Ciss): Lower values improve switching speed; substitutes with Ciss ≤ 1000pF are acceptable

All substitute parts listed meet the critical matching parameters. Performance variations in drain current, on-resistance, and capacitance are documented to enable circuit-level assessment.

Parameter Comparison

Parameter	FQB6N60TM (onsemi)	STB8NM60D (STMicroelectronics)	IRFBC30ASTRLPBF (Vishay Siliconix)	STB4NK60ZT4 (STMicroelectronics)
Drain to Source Voltage (Vdss)	600V	600V	600V	600V
Continuous Drain Current (Id) @ 25°C	6.2A (Tc)	8A (Tc)	3.6A (Tc)	4A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	1.5Ω @ 3.1A, 10V	1Ω @ 2.5A, 10V	2.2Ω @ 2.2A, 10V	2Ω @ 2A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5V @ 250µA	5V @ 250µA	4.5V @ 250µA	4.5V @ 50µA
Gate Charge (Qg Max) @ Vgs	25nC @ 10V	18nC @ 10V	23nC @ 10V	26nC @ 10V
Maximum Gate-Source Voltage (Vgs Max)	±30V	±30V	±30V	±30V
Input Capacitance (Ciss Max) @ Vds	1000pF @ 25V	380pF @ 25V	510pF @ 25V	510pF @ 25V
Power Dissipation (Max)	3.13W (Ta), 130W (Tc)	100W (Tc)	74W (Tc)	70W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)	-65°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Package Type	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Last Time Buy	Active	Active
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STB8NM60D (STMicroelectronics) – Primary Substitute

The STB8NM60D is the most direct functional equivalent. It exceeds the FQB6N60TM in continuous drain current (8A vs. 6.2A) and provides superior on-resistance performance (1Ω vs. 1.5Ω). The device features lower gate charge (18nC vs. 25nC) and significantly reduced input capacitance (380pF vs. 1000pF), resulting in improved switching efficiency. Operating temperature range extends to -65°C, providing enhanced low-temperature performance. The STB8NM60D is classified as Last Time Buy, indicating limited future availability; however, current inventory of 1,564 units supports near-term production requirements. RoHS3 compliance and REACH Unaffected status align with regulatory requirements.

IRFBC30ASTRLPBF (Vishay Siliconix) – Secondary Substitute

The IRFBC30ASTRLPBF maintains full voltage and package compatibility with the FQB6N60TM. Continuous drain current is reduced to 3.6A, requiring circuit-level assessment for applications demanding the full 6.2A rating. On-resistance is higher at 2.2Ω, resulting in increased power dissipation. Gate charge and input capacitance are comparable to the original part. The IRFBC30ASTRLPBF is classified as Active with substantial inventory (15,600 units), ensuring long-term availability. RoHS3 compliance and Cut Tape packaging provide supply chain flexibility.

STB4NK60ZT4 (STMicroelectronics) – Tertiary Substitute

The STB4NK60ZT4 provides voltage and package compatibility with reduced continuous drain current (4A vs. 6.2A). On-resistance of 2Ω and gate charge of 26nC are comparable to the original specification. Input capacitance matches the IRFBC30ASTRLPBF at 510pF. The device is classified as Active with inventory of 9,585 units. RoHS3 compliance and availability in Cut Tape and Digi-Reel® packaging support production flexibility. This substitute is suitable for applications with lower current requirements.

Regulatory and Compliance Considerations

All substitute parts maintain ECCN EAR99 classification and HTSUS code 8541.29.0095, consistent with the original FQB6N60TM. The STB8NM60D and STB4NK60ZT4 are ROHS3 compliant, while the IRFBC30ASTRLPBF also meets ROHS3 requirements. All substitutes maintain MSL 1 (Unlimited) moisture sensitivity rating, eliminating moisture-related handling constraints.

Frequently Asked Questions (FAQ)

Q: Can the STB8NM60D directly replace the FQB6N60TM in existing PCB designs?

A: Yes. The STB8NM60D is housed in the identical TO-263 (D2PAK) package with the same pinout and lead configuration. No PCB modifications are required. The device exceeds the original specification in drain current and on-resistance performance, making it a direct functional upgrade.

Q: What is the primary limitation of the IRFBC30ASTRLPBF as a substitute?

A: The IRFBC30ASTRLPBF has a maximum continuous drain current of 3.6A, compared to the FQB6N60TM's 6.2A rating. Applications requiring the full current capacity of the original part must use the STB8NM60D or STB4NK60ZT4. Circuit-level thermal and current analysis is required to confirm suitability.

Q: Why is the STB8NM60D classified as Last Time Buy?

A: Last Time Buy status indicates that STMicroelectronics has announced end-of-life for this product line. Existing inventory remains available for purchase, but no future production is planned. For long-term production requirements, the IRFBC30ASTRLPBF (Active status) or STB4NK60ZT4 (Active status) are recommended.

Q: Are all substitute parts RoHS compliant?

A: Yes. The STB8NM60D, IRFBC30ASTRLPBF, and STB4NK60ZT4 are all ROHS3 compliant. The original FQB6N60TM is REACH Unaffected, and all substitutes maintain equivalent regulatory status.

Q: How do the on-resistance values affect circuit performance?

A: On-resistance (Rds On) directly impacts power dissipation and heat generation. The STB8NM60D (1Ω) dissipates less power than the FQB6N60TM (1.5Ω), improving thermal efficiency. The IRFBC30ASTRLPBF (2.2Ω) and STB4NK60ZT4 (2Ω) have higher on-resistance, resulting in increased power loss. Thermal design calculations must account for these differences.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and improves efficiency at high switching frequencies. The STB8NM60D (18nC) provides the best switching performance, while the STB4NK60ZT4 (26nC) is slightly higher than the original (25nC).

Q: Can input capacitance (Ciss) affect circuit design?

A: Yes. Input capacitance influences gate drive circuit design and switching speed. The STB8NM60D (380pF) has significantly lower capacitance than the FQB6N60TM (1000pF), enabling faster switching and reduced gate drive power requirements. The IRFBC30ASTRLPBF and STB4NK60ZT4 (both 510pF) provide intermediate performance.

Q: What packaging options are available for substitute parts?

A: All substitute parts are available in TO-263 (D2PAK) surface mount configuration. The STB8NM60D and STB4NK60ZT4 are available in Cut Tape and Digi-Reel® packaging, providing supply chain flexibility. The IRFBC30ASTRLPBF is supplied in Cut Tape format.

Q: Are there temperature range differences between substitutes?

A: The STB8NM60D supports -65°C to 150°C, extending the low-temperature operating range by 10°C compared to the FQB6N60TM (-55°C to 150°C). The IRFBC30ASTRLPBF and STB4NK60ZT4 maintain the original -55°C to 150°C range. All devices support the full 150°C maximum junction temperature.

Q: Which substitute is recommended for new designs?

A: The IRFBC30ASTRLPBF (Active status) or STB4NK60ZT4 (Active status) are recommended for new designs due to their Active product status and assured long-term availability. For applications requiring maximum current capacity and efficiency, the STB8NM60D is preferred despite Last Time Buy status, provided inventory constraints are acceptable.

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