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FQB65N06TM N-Channel MOSFET 60V 65A Equivalent & Substitute Parts
Part Overview
The FQB65N06TM is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 65A continuous drain current in the D2PAK surface mount package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. The part operates across a wide temperature range from -55°C to 175°C and is suitable for applications requiring moderate to high current switching at 60V levels.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 65 | A (Tc) |
| On-Resistance (Rds On) @ Id, Vgs | 16 mOhm @ 32.5A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 65 | nC @ 10V |
| Maximum Gate Voltage (Vgs) | ±25 | V |
| Input Capacitance (Ciss) @ Vds | 2410 | pF @ 25V |
| Power Dissipation (Max) | 3.75 (Ta), 150 (Tc) | W |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-263-3 (D2PAK) | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 | Unlimited |
Substitute Part Grouping Explanation
Substitution of the FQB65N06TM is determined by alignment across the following critical parameters:
Mandatory Matching Criteria:
- Drain-to-Source Voltage (Vdss): 60V
- Package Type: D2PAK (TO-263-3) surface mount configuration
- FET Type: N-Channel MOSFET
- Technology: Metal Oxide Semiconductor
Performance Compatibility Criteria:
- Continuous Drain Current (Id): Substitute must meet or exceed 65A at Tc
- On-Resistance (Rds On): Lower or equivalent values at specified gate voltage
- Gate Threshold Voltage (Vgs(th)): Within ±1V of 4V specification
- Operating Temperature Range: Minimum -55°C to 175°C coverage
- Gate Charge (Qg): Lower values preferred for faster switching
Compliance Criteria:
- Moisture Sensitivity Level: MSL 1 (Unlimited)
- REACH Status: REACH Unaffected
- RoHS Compliance: ROHS3 Compliant (where applicable)
The substitute parts listed below satisfy these criteria with varying degrees of performance optimization. Selection depends on specific application requirements regarding current capacity, thermal dissipation, and switching speed.
Parameter Comparison
| Parameter | FQB65N06TM (onsemi) | BUK7613-60E,118 (Nexperia) | PSMN015-60BS,118 (Nexperia) | RSJ400N06FRATL (Rohm) | STB55NF06T4 (STMicro) | STB60NF06T4 (STMicro) |
|---|---|---|---|---|---|---|
| Vdss (V) | 60 | 60 | 60 | 60 | 60 | 60 |
| Id @ 25°C (A) | 65 (Tc) | 58 (Tc) | 50 (Tc) | 40 (Ta) | 50 (Tc) | 60 (Tc) |
| Rds On (mOhm) | 16 @ 32.5A, 10V | 13 @ 15A, 10V | 14.8 @ 15A, 10V | 16 @ 40A, 10V | 18 @ 27.5A, 10V | 16 @ 30A, 10V |
| Vgs(th) (V) | 4 @ 250µA | 4 @ 1mA | 4 @ 1mA | 3 @ 1mA | 4 @ 250µA | 4 @ 250µA |
| Qg (nC) | 65 @ 10V | 22.9 @ 10V | 20.9 @ 10V | 52 @ 10V | 60 @ 10V | 66 @ 10V |
| Vgs Max (V) | ±25 | ±20 | ±20 | ±20 | ±20 | ±20 |
| Ciss (pF) | 2410 @ 25V | 1730 @ 25V | 1220 @ 30V | 2400 @ 10V | 1300 @ 25V | 1810 @ 25V |
| Power Dissipation (W) | 150 (Tc) | 96 (Tc) | 86 (Tc) | 50 (Ta) | 110 (Tc) | 110 (Tc) |
| Operating Temp (°C) | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 150 | -55 to 175 | -65 to 175 |
| Package | D2PAK | D2PAK | D2PAK | LPTS | D2PAK | D2PAK |
| Product Status | Obsolete | Active | Active | Active | Active | Active |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Primary Substitute: STB60NF06T4 (STMicroelectronics)
The STB60NF06T4 provides the closest electrical match to the FQB65N06TM with 60A continuous drain current at Tc, matching the original 60V Vdss rating and D2PAK package configuration. This part is actively manufactured, ROHS3 compliant, and maintains the same operating temperature range (-65°C to 175°C). The 16 mOhm on-resistance at 30A, 10V is equivalent to the original specification. Gate charge of 66 nC at 10V is comparable to the original 65 nC, ensuring similar switching characteristics. This device is recommended for direct replacement in applications where the 65A specification can be reduced to 60A without performance degradation.
Secondary Substitute: STB60NF06LT4 (STMicroelectronics)
The STB60NF06LT4 offers enhanced performance with lower on-resistance (14 mOhm at 30A, 10V) and reduced gate charge (66 nC at 4.5V), providing improved switching efficiency. This part maintains 60A continuous drain current and D2PAK packaging. The extended operating temperature range (-65°C to 175°C) exceeds the original specification. This device is suitable for applications requiring lower power dissipation and faster switching response.
Alternative for Current-Limited Applications: BUK7613-60E,118 (Nexperia)
The BUK7613-60E,118 is an automotive-qualified device (AEC-Q101) with 58A continuous drain current and superior on-resistance performance (13 mOhm at 15A, 10V). The significantly lower gate charge (22.9 nC at 10V) enables faster switching transitions. This part is recommended for applications where current requirements can be reduced to 58A and where automotive-grade qualification is beneficial. Active product status and ROHS3 compliance ensure long-term availability.
Lower Current Alternative: PSMN015-60BS,118 (Nexperia)
The PSMN015-60BS,118 provides 50A continuous drain current with 14.8 mOhm on-resistance and the lowest input capacitance (1220 pF at 30V) among the substitutes. This configuration reduces gate drive requirements and switching losses. Suitable for applications where current capacity can be reduced to 50A and where minimized input capacitance is advantageous.
Package Variant: RSJ400N06FRATL (Rohm Semiconductor)
The RSJ400N06FRATL uses the LPTS package variant while maintaining D2PAK electrical compatibility. This automotive-qualified device (AEC-Q101) provides 40A continuous drain current with 16 mOhm on-resistance. The operating temperature range extends to 150°C maximum. This option is suitable for space-constrained applications where the LPTS package footprint is preferred and current requirements do not exceed 40A.
Current-Matched Alternative: STB55NF06T4 (STMicroelectronics)
The STB55NF06T4 provides 50A continuous drain current with 18 mOhm on-resistance at 27.5A, 10V. This device maintains full D2PAK compatibility and operates across -55°C to 175°C. The 60 nC gate charge at 10V is comparable to the original specification. This part is suitable for applications where current requirements can be reduced to 50A.
Frequently Asked Questions (FAQ)
Q: Can the STB60NF06T4 directly replace the FQB65N06TM without circuit modifications?
A: The STB60NF06T4 is electrically compatible with the FQB65N06TM across all critical parameters: 60V Vdss, D2PAK package, and equivalent on-resistance characteristics. The 60A continuous drain current specification is 5A lower than the original 65A rating. Direct substitution is valid if the application circuit does not require the full 65A capacity. Gate drive voltage and threshold characteristics are identical, eliminating the need for driver circuit changes.
Q: What is the primary advantage of the BUK7613-60E,118 over the STB60NF06T4?
A: The BUK7613-60E,118 features significantly lower gate charge (22.9 nC versus 66 nC) and superior on-resistance performance (13 mOhm versus 16 mOhm). These characteristics result in reduced switching losses and faster gate response times. The automotive AEC-Q101 qualification provides additional reliability assurance for demanding applications. The trade-off is a reduced continuous drain current specification of 58A compared to 60A.
Q: Are all substitute parts ROHS3 compliant?
A: All substitute parts listed are ROHS3 compliant. The original FQB65N06TM RoHS status was not specified in the provided data. All active substitute devices meet current environmental compliance requirements.
Q: Why does the RSJ400N06FRATL use an LPTS package instead of standard D2PAK?
A: The LPTS package is a variant of the D2PAK family that maintains electrical compatibility while offering a different physical footprint. The RSJ400N06FRATL provides the same TO-263-3 pinout and electrical characteristics as D2PAK devices. Selection of this variant depends on PCB layout constraints and thermal management requirements specific to the application.
Q: What is the significance of gate charge (Qg) differences among the substitute parts?
A: Gate charge directly affects switching speed and gate driver power requirements. Lower gate charge values (such as the 22.9 nC in the BUK7613-60E,118) enable faster switching transitions and reduce driver circuit stress. Higher gate charge values (such as the 66 nC in the STB60NF06T4) require more gate drive energy but may provide improved noise immunity. Selection depends on the specific gate driver circuit capabilities and application switching frequency requirements.
Q: Can the PSMN015-60BS,118 be used in applications originally designed for 65A operation?
A: The PSMN015-60BS,118 is rated for 50A continuous drain current, which is 15A below the original FQB65N06TM specification. This device is suitable only for applications where the actual operating current does not exceed 50A. Use in higher current applications would result in thermal stress and potential device failure. Circuit analysis must confirm that peak and continuous current requirements remain within the 50A limit.
Q: What is the operating temperature advantage of the STB60NF06LT4?
A: The STB60NF06LT4 operates across -65°C to 175°C, extending the lower temperature limit by 10°C compared to the original FQB65N06TM specification of -55°C to 175°C. This extended range is beneficial for applications exposed to extreme cold environments or where thermal cycling stress is a concern. The upper temperature limit remains identical at 175°C.
Q: Are there any gate voltage (Vgs) compatibility concerns with the substitute parts?
A: The original FQB65N06TM specifies ±25V maximum gate voltage, while most substitute parts limit Vgs to ±20V. This difference is not problematic for standard gate driver circuits that typically operate within ±15V. Applications using gate voltages between ±20V and ±25V must verify that the selected substitute part's ±20V limit is acceptable. The STB60NF06LT4 further limits Vgs to ±15V, requiring verification for circuits using higher gate drive voltages.
Q: How do input capacitance (Ciss) differences affect circuit performance?
A: Input capacitance affects gate charge requirements and switching speed. The FQB65N06TM specifies 2410 pF at 25V. Substitute parts range from 1220 pF (PSMN015-60BS,118) to 2400 pF (RSJ400N06FRATL). Lower input capacitance reduces gate driver power dissipation and enables faster switching. Higher input capacitance may require stronger gate drivers but can improve noise immunity. Selection depends on the gate driver circuit design and application switching frequency.
Q: What is the significance of the Tc versus Ta power dissipation ratings?
A: Tc (case temperature) ratings represent power dissipation with active thermal management (heatsinking), while Ta (ambient temperature) ratings assume natural convection cooling. The FQB65N06TM specifies 150W at Tc and 3.75W at Ta. Substitute parts using Tc ratings (BUK7613-60E,118 at 96W, STB60NF06T4 at 110W) indicate superior thermal performance with proper heatsinking. The RSJ400N06FRATL specifies 50W at Ta, indicating lower power dissipation capability without active cooling. Application thermal design determines which rating is relevant.
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