FQB5P20TM Equivalent & Substitute Parts

Part Overview

The FQB5P20TM is a P-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 4.8A continuous drain current at 25°C. This device is packaged in the TO-263 (D2PAK) surface mount configuration and is part of the QFET® series. The FQB5P20TM is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain functional compatibility within the electrical and mechanical constraints of the original application.

Substiute Parts

FQB5P20TM
onsemiIn Stock: 1676FQB5P20TM Datasheet
FQB5P20TM
Current Part
IRF5210STRLPBF
Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet
IRF5210STRLPBF
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Key Parameters

Parameter FQB5P20TM
Manufacturer onsemi
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Product Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FQB5P20TM requires evaluation of electrical and mechanical compatibility based on the following critical parameters:

Electrical Compatibility Criteria:

  • FET Type: Must be P-Channel MOSFET
  • Technology: Must be MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 200V
  • Current - Continuous Drain (Id): Substitute must equal or exceed 4.8A at 25°C
  • Mounting Type: Must be Surface Mount
  • Package / Case: Must be compatible with TO-263 (D2PAK) footprint

Mechanical Compatibility Criteria:

  • Supplier Device Package: TO-263 (D2PAK) or equivalent
  • Pin configuration: 2 Leads + Tab

The IRF5210STRLPBF is identified as a substitute part. However, this device operates at a reduced Vdss rating of 100V compared to the FQB5P20TM's 200V specification. This represents a voltage derating and is suitable only for applications where the circuit operates at or below 100V drain-to-source conditions. The IRF5210STRLPBF provides superior current handling (38A vs. 4.8A) and significantly lower on-resistance (60mOhm vs. 1.4Ohm), making it suitable for lower-voltage, higher-current applications within the same package footprint.

Parameter Comparison

Parameter FQB5P20TM (onsemi) IRF5210STRLPBF (Infineon) Notes
FET Type P-Channel P-Channel Compatible
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Compatible
Drain to Source Voltage (Vdss) 200 V 100 V Substitute rated lower; application voltage must not exceed 100V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc) 38A (Tc) Substitute exceeds requirement
Drive Voltage (Max Rds On) 10V 10V Compatible
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.4A, 10V 60mOhm @ 38A, 10V Substitute has lower on-resistance
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA Substitute has lower threshold voltage
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 230 nC @ 10 V Substitute requires higher gate charge
Vgs (Max) ±30V ±20V Substitute has lower gate voltage rating
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V 2780 pF @ 25 V Substitute has higher input capacitance
Power Dissipation (Max) 3.13W (Ta), 75W (Tc) 3.1W (Ta), 170W (Tc) Substitute has higher thermal capacity
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Compatible
Mounting Type Surface Mount Surface Mount Compatible
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK Compatible footprint
Product Status Obsolete Active Substitute is in active production
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Compatible

Engineering Selection Recommendations

Primary Consideration: Voltage Rating

The IRF5210STRLPBF operates at a maximum Vdss of 100V, which is 50% lower than the FQB5P20TM's 200V rating. This device is suitable as a substitute only in applications where the actual drain-to-source voltage does not exceed 100V. Direct substitution in circuits designed for 200V operation is not permissible.

Product Status and Availability

The FQB5P20TM is classified as obsolete, while the IRF5210STRLPBF is in active production status. For new designs or production continuity, the IRF5210STRLPBF offers the advantage of ongoing manufacturer support and availability.

Compliance and Certifications

Both devices carry identical REACH and ECCN classifications (REACH Unaffected, EAR99). The IRF5210STRLPBF includes RoHS3 compliance certification, providing additional regulatory alignment for modern applications. Both devices maintain MSL 1 (Unlimited) moisture sensitivity ratings.

Electrical Performance Trade-offs

The IRF5210STRLPBF provides superior current handling capacity (38A vs. 4.8A) and significantly lower on-resistance (60mOhm vs. 1.4Ohm). However, the substitute exhibits higher gate charge (230 nC vs. 13 nC) and input capacitance (2780 pF vs. 430 pF), which may impact switching speed and gate drive circuit design. The maximum gate voltage rating is also reduced from ±30V to ±20V.

Package Compatibility

Both devices use the TO-263 (D2PAK) surface mount package with identical pin configuration (2 Leads + Tab), ensuring mechanical and footprint compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF be used as a direct replacement for the FQB5P20TM in all applications?

A: No. The IRF5210STRLPBF has a maximum Vdss rating of 100V, compared to the FQB5P20TM's 200V rating. Direct substitution is only permissible in applications where the drain-to-source voltage does not exceed 100V. Applications requiring 200V operation require alternative parts with matching voltage ratings.

Q: What are the key electrical differences between these two devices?

A: The primary difference is the Vdss rating (200V vs. 100V). Secondary differences include: current capacity (4.8A vs. 38A), on-resistance (1.4Ohm vs. 60mOhm), gate charge (13 nC vs. 230 nC), input capacitance (430 pF vs. 2780 pF), and maximum gate voltage (±30V vs. ±20V). These differences reflect different design targets: the FQB5P20TM is optimized for higher-voltage, lower-current applications, while the IRF5210STRLPBF is optimized for lower-voltage, higher-current applications.

Q: Are the packages physically compatible?

A: Yes. Both devices use the TO-263 (D2PAK) surface mount package with identical pin configuration (2 Leads + Tab). The footprint and pinout are compatible, allowing for PCB-level substitution without layout modifications.

Q: What impact will the higher gate charge of the IRF5210STRLPBF have on circuit performance?

A: The IRF5210STRLPBF requires 230 nC of gate charge compared to 13 nC for the FQB5P20TM. This higher gate charge will increase switching time and may require adjustment of gate drive circuit parameters, including drive current and timing. Gate drive circuits must be evaluated for compatibility with the higher capacitive load.

Q: Is the IRF5210STRLPBF suitable for high-frequency switching applications?

A: The higher input capacitance (2780 pF vs. 430 pF) and gate charge (230 nC vs. 13 nC) of the IRF5210STRLPBF will result in slower switching transitions compared to the FQB5P20TM. Applications requiring high-frequency switching should evaluate the impact of these parameters on overall circuit performance and efficiency.

Q: What is the significance of the product status difference?

A: The FQB5P20TM is obsolete, meaning onsemi no longer manufactures or supports this device. The IRF5210STRLPBF is in active production, ensuring ongoing availability, manufacturer support, and compliance with current industry standards. For new designs or long-term production, the active status of the IRF5210STRLPBF provides supply chain stability.

Q: Are there any compliance or regulatory differences between these devices?

A: Both devices share identical REACH and ECCN classifications. The IRF5210STRLPBF includes RoHS3 compliance certification, while the FQB5P20TM does not specify RoHS status. Both maintain MSL 1 (Unlimited) moisture sensitivity ratings, indicating no special handling requirements during storage or assembly.

Q: Can the IRF5210STRLPBF handle higher current than the FQB5P20TM?

A: Yes. The IRF5210STRLPBF is rated for 38A continuous drain current compared to 4.8A for the FQB5P20TM. However, this higher current capacity is only relevant in applications where the circuit design permits such current levels. The voltage rating limitation (100V vs. 200V) remains the primary constraint for substitution eligibility.

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