FQB5P10TM Equivalent & Substitute Parts

Part Overview

The FQB5P10TM is a P-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 4.5A continuous drain current. The device is packaged in a Surface Mount TO-263 (D2PAK) configuration and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	4.5	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.05	Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	250	pF @ 25V
Power Dissipation (Max)	3.75 (Ta), 40 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FQB5P10TM is determined by the following critical parameters:

Primary Matching Criteria:

FET Type: P-Channel MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V minimum
Mounting Type: Surface Mount D2PAK package
Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
Drive Voltage: 10V

Secondary Compatibility Factors:

Continuous Drain Current (Id): Equal to or greater than 4.5A
Rds On (Max): Equal to or lower than 1.05 Ohm at specified conditions
Operating Temperature Range: Minimum -55°C to 175°C
Moisture Sensitivity Level: MSL 1 (Unlimited)

The substitute parts listed below meet or exceed the primary matching criteria and maintain electrical and mechanical compatibility with the FQB5P10TM in standard applications.

Parameter Comparison

Parameter	FQB5P10TM (onsemi)	IRF5210STRLPBF (Infineon)	IRF6215STRLPBF (Infineon)
FET Type	P-Channel	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	100 V	100 V	150 V
Continuous Drain Current (Id) @ 25°C	4.5 A (Tc)	38 A (Tc)	13 A (Tc)
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	1.05 Ohm @ 2.25A, 10V	60 mOhm @ 38A, 10V	290 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4 V @ 250µA	4 V @ 250µA	4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10V	230 nC @ 10V	66 nC @ 10V
Vgs (Max)	±30 V	±20 V	±20 V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25V	2780 pF @ 25V	860 pF @ 25V
Power Dissipation (Max)	3.75 W (Ta), 40 W (Tc)	3.1 W (Ta), 170 W (Tc)	3.8 W (Ta), 110 W (Tc)
Operating Temperature Range	-55°C to 175°C (TJ)	-55°C to 150°C (TJ)	-55°C to 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Active	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IRF5210STRLPBF (Infineon Technologies)

The IRF5210STRLPBF is an active product with identical Vdss (100V) and Vgs(th) specifications to the FQB5P10TM. This device provides significantly higher continuous drain current (38A versus 4.5A) and substantially lower Rds On (60 mOhm versus 1.05 Ohm), resulting in improved thermal performance and reduced power dissipation. The IRF5210STRLPBF is ROHS3 compliant and carries active product status, ensuring long-term availability. The maximum operating temperature is 150°C, which is 25°C lower than the FQB5P10TM. Gate charge is higher (230 nC versus 8.2 nC), and input capacitance is significantly higher (2780 pF versus 250 pF), which may affect switching speed in high-frequency applications. Maximum gate voltage is ±20V, compared to ±30V for the original part.

IRF6215STRLPBF (Infineon Technologies)

The IRF6215STRLPBF features a higher Vdss rating (150V versus 100V) and intermediate continuous drain current (13A versus 4.5A). This device maintains the same Vgs(th) specification and supports the full operating temperature range (-55°C to 175°C) matching the FQB5P10TM. The IRF6215STRLPBF is ROHS3 compliant. Rds On is higher (290 mOhm versus 1.05 Ohm), and gate charge is higher (66 nC versus 8.2 nC). Input capacitance is elevated (860 pF versus 250 pF). The IRF6215STRLPBF is classified as obsolete, similar to the original part. Maximum gate voltage is ±20V.

For applications requiring active product status and long-term supply assurance, the IRF5210STRLPBF is the preferred substitute. For applications requiring higher voltage rating or extended temperature range compatibility, the IRF6215STRLPBF provides alternative electrical characteristics within the D2PAK package family.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF directly replace the FQB5P10TM in all applications?

A: The IRF5210STRLPBF is electrically compatible with the FQB5P10TM in applications where the lower maximum operating temperature (150°C versus 175°C) and higher gate charge (230 nC versus 8.2 nC) do not present design constraints. The superior current handling and lower Rds On make it suitable for most standard switching applications. Verification of thermal performance and switching speed requirements is necessary for specific circuit implementations.

Q: What is the significance of the higher gate charge in the IRF5210STRLPBF?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET between on and off states. The IRF5210STRLPBF requires 230 nC compared to 8.2 nC for the FQB5P10TM. Higher gate charge increases switching time and may require higher gate drive current. This affects circuit design in high-frequency switching applications and power supply efficiency.

Q: Why is the input capacitance (Ciss) significantly higher in the substitute parts?

A: Input capacitance is directly related to the die size and current-handling capability of the MOSFET. The IRF5210STRLPBF (2780 pF) and IRF6215STRLPBF (860 pF) have larger die areas than the FQB5P10TM (250 pF) to support higher current ratings. Higher input capacitance increases gate drive requirements and may affect switching speed in high-frequency circuits.

Q: Are both substitute parts available in the same D2PAK package?

A: Yes, both the IRF5210STRLPBF and IRF6215STRLPBF are packaged in the D2PAK (TO-263-3) Surface Mount configuration, identical to the FQB5P10TM. Pin configuration and mechanical dimensions are compatible for direct PCB layout substitution.

Q: What is the difference in maximum gate voltage between the original and substitute parts?

A: The FQB5P10TM supports ±30V maximum gate voltage, while both Infineon substitutes (IRF5210STRLPBF and IRF6215STRLPBF) support ±20V. Circuits designed with gate drive voltages exceeding ±20V require modification or alternative component selection.

Q: Which substitute part should be selected for new production designs?

A: The IRF5210STRLPBF is recommended for new production designs due to its active product status, ROHS3 compliance, and superior electrical performance characteristics. The IRF6215STRLPBF is classified as obsolete and should not be selected for new designs requiring long-term component availability.

Q: Are the substitute parts RoHS compliant?

A: Both the IRF5210STRLPBF and IRF6215STRLPBF are ROHS3 compliant. The FQB5P10TM RoHS status is not specified in the provided data.

Q: What is the moisture sensitivity level for all parts?

A: All three parts (FQB5P10TM, IRF5210STRLPBF, and IRF6215STRLPBF) carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions for storage and handling.

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