FQB5N90TM N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQB5N90TM is an N-Channel MOSFET manufactured by onsemi, rated for 900V drain-to-source voltage with 5.4A continuous drain current. This device is part of the QFET® series and is housed in a Surface Mount TO-263 (D2PAK) package. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the TO-263 package family and surface mount assembly requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	5.4	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	2.3	Ohm @ 2.7A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	40	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	1550	pF @ 25V
Maximum Gate Voltage (Vgs Max)	±30	V
Power Dissipation (Max)	3.13 (Ta), 158 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the FQB5N90TM are identified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

FET Type: N-Channel MOSFET technology
Package Family: TO-263 (D2PAK) Surface Mount configuration
Drain-to-Source Voltage (Vdss): Equal to or greater than 900V
Continuous Drain Current (Id): Equal to or greater than 5.4A
Gate Voltage Range (Vgs): ±30V maximum rating
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS3 Compliance and MSL 1 rating

Substitution Logic: Parts meeting or exceeding the voltage and current specifications while maintaining the same package footprint and thermal characteristics are classified as functional equivalents. The IXFA6N120P meets these criteria with higher voltage rating (1200V) and current capability (6A), ensuring drop-in compatibility for applications requiring the FQB5N90TM.

Parameter Comparison

Parameter	FQB5N90TM (onsemi)	IXFA6N120P (IXYS)	Unit
Manufacturer	onsemi	IXYS	-
FET Type	N-Channel	N-Channel	-
Drain to Source Voltage (Vdss)	900	1200	V
Continuous Drain Current (Id) @ 25°C	5.4	6	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	2.3 @ 2.7A, 10V	2.4 @ 500mA, 10V	Ohm
Vgs(th) (Max) @ Id	5 @ 250µA	5 @ 1mA	V
Gate Charge (Qg Max) @ Vgs	40 @ 10V	92 @ 10V	nC
Vgs (Max)	±30	±30	V
Input Capacitance (Ciss Max) @ Vds	1550 @ 25V	2830 @ 25V	pF
Power Dissipation (Max)	3.13 (Ta), 158 (Tc)	250 (Tc)	W
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	-
Package Type	TO-263 (D2PAK)	TO-263AA (IXFA)	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
MSL Rating	1 (Unlimited)	1 (Unlimited)	-
Product Status	Active	Active	-

Engineering Selection Recommendations

FQB5N90TM (Primary Part): The FQB5N90TM is the specified component for applications requiring 900V blocking voltage with 5.4A continuous drain current in a TO-263 surface mount package. This part is actively manufactured by onsemi and maintains full RoHS3 compliance with MSL 1 rating. Selection is appropriate when the exact voltage and current specifications are required and onsemi supply chain availability is confirmed.

IXFA6N120P (Substitute Part): The IXFA6N120P from IXYS serves as a functional equivalent for applications where higher voltage margin (1200V) and increased current capability (6A) are acceptable. This part is actively manufactured and maintains identical RoHS3 compliance and MSL 1 rating. The substitute is suitable for drop-in replacement when supply constraints on the FQB5N90TM occur or when the application benefits from the enhanced voltage and current specifications. Both parts share the TO-263 package family and identical operating temperature range.

Compliance Considerations: Both parts are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with identical HTSUS code 8541.29.0095. Both maintain MSL 1 (unlimited) moisture sensitivity level, eliminating moisture-related handling constraints.

Frequently Asked Questions (FAQ)

Q: Can the IXFA6N120P directly replace the FQB5N90TM in existing designs?

A: Yes. Both devices share the TO-263 (D2PAK) surface mount package footprint and pinout. The IXFA6N120P provides higher voltage (1200V vs. 900V) and current (6A vs. 5.4A) ratings, making it electrically compatible for applications designed around the FQB5N90TM specifications.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are voltage rating (900V vs. 1200V), continuous drain current (5.4A vs. 6A), gate charge (40nC vs. 92nC), and input capacitance (1550pF vs. 2830pF). The IXFA6N120P exhibits higher gate charge and input capacitance due to its higher voltage rating, which may affect gate drive circuit design.

Q: Are there packaging differences between FQB5N90TM and IXFA6N120P?

A: Both parts use TO-263 package variants (D2PAK for FQB5N90TM and TO-263AA for IXFA6N120P). These are mechanically and electrically compatible surface mount packages with identical lead spacing and thermal tab configuration.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the FQB5N90TM and IXFA6N120P are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating. Both are classified under ECCN EAR99 and share the same HTSUS code.

Q: What is the operating temperature range for both devices?

A: Both the FQB5N90TM and IXFA6N120P operate across the identical temperature range of -55°C to 150°C (junction temperature TJ).

Q: How do the on-state resistance values compare?

A: The FQB5N90TM specifies 2.3Ohm maximum at 2.7A and 10V gate voltage, while the IXFA6N120P specifies 2.4Ohm maximum at 500mA and 10V gate voltage. These measurements are taken at different current levels due to device design differences, but both remain within comparable performance ranges for high-voltage MOSFET applications.

Q: What is the maximum gate voltage for both parts?

A: Both devices support a maximum gate voltage (Vgs Max) of ±30V, providing identical gate drive voltage compatibility.

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