FQB5N60CTM N-Channel MOSFET 600V 4.5A Equivalent & Substitute Parts

Part Overview

The FQB5N60CTM is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 4.5A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is part of the QFET® series. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across voltage ratings, current handling, package type, and thermal characteristics to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	FQB5N60CTM
Drain-to-Source Voltage (Vdss)	600 V
Continuous Drain Current (Id) @ 25°C	4.5 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	2.5 Ω @ 2.25 A, 10 V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4 V @ 250 µA
Gate Charge (Qg Max) @ Vgs	19 nC @ 10 V
Power Dissipation (Max)	3.13 W (Ta), 100 W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)
Package Type	TO-263 (D2PAK)
Mounting Type	Surface Mount
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the FQB5N60CTM is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600 V
Package Type: Must be TO-263 (D2PAK) surface mount
Continuous Drain Current (Id): Must support minimum 4.5 A at 25°C
Operating Temperature Range: Must span -55°C to 150°C (TJ)
FET Type: N-Channel MOSFET technology
Gate Threshold Voltage: Must be compatible with 10 V drive voltage applications

Acceptable Variation Parameters:

On-State Resistance (Rds On): Substitute values between 2.0 Ω and 2.5 Ω are acceptable
Gate Charge (Qg): Substitute values up to 31 nC are acceptable
Power Dissipation: Substitute values at or above 70 W (Tc) are acceptable
Input Capacitance (Ciss): Substitute values between 510 pF and 670 pF are acceptable

Both identified substitute parts meet these criteria and are qualified for direct replacement in applications designed for the FQB5N60CTM.

Parameter Comparison

Parameter	FQB5N60CTM (onsemi)	IRFBC30SPBF (Vishay Siliconix)	STB4NK60ZT4 (STMicroelectronics)
Drain-to-Source Voltage (Vdss)	600 V	600 V	600 V
Continuous Drain Current (Id) @ 25°C	4.5 A (Tc)	3.6 A (Tc)	4 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	2.5 Ω @ 2.25 A, 10 V	2.2 Ω @ 2.2 A, 10 V	2 Ω @ 2 A, 10 V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4 V @ 250 µA	4 V @ 250 µA	4.5 V @ 50 µA
Gate Charge (Qg Max) @ Vgs	19 nC @ 10 V	31 nC @ 10 V	26 nC @ 10 V
Vgs (Max)	±30 V	±20 V	±30 V
Input Capacitance (Ciss Max) @ Vds	670 pF @ 25 V	660 pF @ 25 V	510 pF @ 25 V
Power Dissipation (Max)	3.13 W (Ta), 100 W (Tc)	3.1 W (Ta), 74 W (Tc)	70 W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Package Type	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFBC30SPBF (Vishay Siliconix)

The IRFBC30SPBF is an active product with ROHS3 compliance, providing long-term availability and regulatory alignment. This substitute operates at 600 V with 3.6 A continuous drain current, which is lower than the FQB5N60CTM's 4.5 A rating. The on-state resistance of 2.2 Ω is superior to the original part's 2.5 Ω, resulting in lower conduction losses. Gate charge is higher at 31 nC compared to 19 nC, which may increase switching losses in high-frequency applications. The maximum gate voltage is limited to ±20 V, compared to ±30 V for the original part. This substitute is suitable for applications where the 3.6 A current rating is sufficient and gate drive voltage does not exceed ±20 V.

STB4NK60ZT4 (STMicroelectronics)

The STB4NK60ZT4 is an active product with ROHS3 compliance and represents the closest electrical match to the FQB5N60CTM. This substitute operates at 600 V with 4 A continuous drain current, closely matching the original 4.5 A specification. The on-state resistance of 2 Ω is superior to the original part's 2.5 Ω, providing improved efficiency. Gate charge at 26 nC is higher than the original 19 nC but lower than the IRFBC30SPBF. The maximum gate voltage of ±30 V matches the original part exactly. Power dissipation at 70 W (Tc) is lower than the original 100 W (Tc), requiring thermal design verification in high-power applications. This substitute is recommended for applications requiring current ratings near 4 A and full ±30 V gate voltage compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC30SPBF replace the FQB5N60CTM in all applications?

A: The IRFBC30SPBF is suitable for applications where the continuous drain current requirement does not exceed 3.6 A and the gate drive voltage remains within ±20 V. Applications requiring the full 4.5 A rating or ±30 V gate voltage operation require evaluation of the STB4NK60ZT4 instead.

Q: What is the impact of higher gate charge in substitute parts?

A: Higher gate charge (Qg) increases the energy required to switch the transistor and extends switching time. The IRFBC30SPBF at 31 nC and STB4NK60ZT4 at 26 nC both exceed the original 19 nC specification. In high-frequency switching applications, this results in increased switching losses and may require gate driver circuit adjustments.

Q: Are both substitute parts pin-compatible with the FQB5N60CTM?

A: Yes. Both the IRFBC30SPBF and STB4NK60ZT4 use the TO-263 (D2PAK) package with identical pin configuration (2 leads plus tab), enabling direct PCB footprint compatibility.

Q: What thermal considerations apply when substituting with the STB4NK60ZT4?

A: The STB4NK60ZT4 has a maximum power dissipation of 70 W (Tc) compared to the original 100 W (Tc). Thermal design verification is required for applications operating at high power levels to ensure the substitute part does not exceed junction temperature limits.

Q: Why is the IRFBC30SPBF limited to ±20 V gate voltage?

A: The IRFBC30SPBF specification sheet defines Vgs (Max) as ±20 V, which is a design parameter of this device. Applications requiring ±30 V gate voltage operation must use the STB4NK60ZT4, which supports the full ±30 V range.

Q: Are both substitute parts available in the same packaging options as the original?

A: The IRFBC30SPBF is supplied in Tube packaging, while the STB4NK60ZT4 is supplied in Cut Tape (CT) and Digi-Reel® packaging. Both are surface mount TO-263 (D2PAK) devices. Packaging format selection depends on procurement and assembly requirements.

Q: What is the significance of RoHS3 compliance on the substitute parts?

A: Both substitute parts carry ROHS3 compliance certification, indicating conformance to Restriction of Hazardous Substances regulations. This compliance status supports long-term supply chain reliability and regulatory requirements in many markets.

Q: Can the STB4NK60ZT4 be used as a direct drop-in replacement for the FQB5N60CTM?

A: The STB4NK60ZT4 is the closest electrical match and is suitable for direct replacement in most applications. However, thermal design verification is required due to the lower maximum power dissipation rating (70 W vs. 100 W). Gate charge differences may also require evaluation in high-frequency switching circuits.

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