FQB50N06TM N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQB50N06TM is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 50A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts are selected based on matching or exceeding critical electrical parameters while maintaining compatible packaging and thermal characteristics.

Key Parameters

Parameter	FQB50N06TM	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
On-Resistance (Rds On) @ 25A, 10V	22	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	41	nC
Input Capacitance (Ciss) @ 25V	1540	pF
Power Dissipation (Tc)	120	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts are grouped into two categories based on electrical parameter compatibility with the FQB50N06TM:

Category A: Direct Electrical Equivalents Parts matching the FQB50N06TM specification of 60V Vdss and 50A continuous drain current. These devices maintain identical voltage and current ratings, enabling direct functional replacement in applications where the original part is no longer available. Substitutes in this category include IRFZ44SPBF, IRFZ44STRLPBF, IRLZ44SPBF, IRLZ44STRRPBF, and IRFZ48RSPBF.

Category B: Enhanced Performance Alternatives Parts exceeding the FQB50N06TM specification in voltage rating, current capacity, or both. These devices operate within the same package footprint and thermal envelope but provide additional design margin. Substitutes in this category include HUF75545S3ST (80V, 75A), IRFS3806TRLPBF (60V, 43A), IRFZ44NSTRLPBF (55V, 49A), and PSMN004-60B,118 (60V, 75A).

Key Parameters Determining Substitution:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 50A
Package Type: Must be TO-263 (D2PAK) surface mount
Operating Temperature Range: Must span -55°C to 175°C
FET Type: Must be N-Channel MOSFET (Metal Oxide)

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Dissipation Tc (W)	Status
FQB50N06TM	onsemi	60	50	22 @ 25A, 10V	4 @ 250µA	41 @ 10V	1540 @ 25V	120	Obsolete
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	4 @ 250µA	235 @ 20V	3750 @ 25V	270	Active
IRFS3806TRLPBF	Infineon Technologies	60	43	15.8 @ 25A, 10V	4 @ 50µA	30 @ 10V	1150 @ 50V	71	Active
IRFZ44NSTRLPBF	Infineon Technologies	55	49	17.5 @ 25A, 10V	4 @ 250µA	63 @ 10V	1470 @ 25V	94	Active
IRFZ44SPBF	Vishay Siliconix	60	50	28 @ 31A, 10V	4 @ 250µA	67 @ 10V	1900 @ 25V	150	Active
IRFZ44STRLPBF	Vishay Siliconix	60	50	28 @ 31A, 10V	4 @ 250µA	67 @ 10V	1900 @ 25V	150	Active
IRFZ48RSPBF	Vishay Siliconix	60	50	18 @ 43A, 10V	4 @ 250µA	110 @ 10V	2400 @ 25V	190	Active
IRFZ48STRLPBF	Vishay Siliconix	60	50	18 @ 43A, 10V	4 @ 250µA	110 @ 10V	2400 @ 25V	190	Active
IRLZ44SPBF	Vishay Siliconix	60	50	28 @ 31A, 5V	2 @ 250µA	66 @ 5V	3300 @ 25V	150	Active
IRLZ44STRRPBF	Vishay Siliconix	60	50	28 @ 31A, 5V	2 @ 250µA	66 @ 5V	3300 @ 25V	150	Active
PSMN004-60B,118	Nexperia USA Inc.	60	75	3.6 @ 25A, 10V	4 @ 1mA	168 @ 10V	8300 @ 25V	230	Active

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance): IRFZ44SPBF, IRFZ44STRLPBF, IRLZ44SPBF, and IRLZ44STRRPBF are suitable direct replacements, each rated for 60V Vdss and 50A continuous drain current. All devices are active products with ROHS3 compliance and MSL 1 moisture sensitivity rating. IRFZ44SPBF and IRFZ44STRLPBF are available in tube and tape & reel packaging respectively. IRLZ44SPBF and IRLZ44STRRPBF feature lower gate threshold voltage (2V vs. 4V) and operate at reduced drive voltage (4V to 5V), which may require gate driver circuit evaluation.

For Enhanced Performance Applications: IRFZ48RSPBF and IRFZ48STRLPBF provide superior on-resistance (18 mOhm vs. 22 mOhm) and increased power dissipation capability (190W vs. 120W), maintaining 60V/50A ratings. PSMN004-60B,118 offers the lowest on-resistance (3.6 mOhm) and highest power dissipation (230W) at 60V/75A, providing maximum thermal margin. HUF75545S3ST extends voltage rating to 80V and current to 75A, suitable for applications requiring additional design margin.

For Current-Limited Applications: IRFS3806TRLPBF operates at 60V with 43A continuous drain current, providing a conservative alternative where lower current capacity is acceptable.

All substitute parts maintain TO-263 (D2PAK) surface mount packaging, -55°C to 175°C operating temperature range, and ROHS3 compliance with the FQB50N06TM.

Frequently Asked Questions (FAQ)

Q: Can IRFZ44SPBF directly replace FQB50N06TM in existing PCB layouts? A: Yes. IRFZ44SPBF matches the FQB50N06TM in voltage rating (60V), current rating (50A), and package type (TO-263 D2PAK). Pin configuration and footprint are identical, enabling direct PCB substitution without layout modification.

Q: What is the difference between IRFZ44SPBF and IRFZ44STRLPBF? A: Both parts are electrically identical with 60V/50A ratings. The primary difference is packaging: IRFZ44SPBF is supplied in tube packaging, while IRFZ44STRLPBF is supplied in tape & reel format. Selection depends on production volume and handling requirements.

Q: Why does IRLZ44SPBF have a lower gate threshold voltage (2V vs. 4V)? A: IRLZ44SPBF is a logic-level MOSFET designed for operation with lower gate drive voltages (4V to 5V). Applications using standard 10V gate drive may require circuit evaluation to confirm proper switching performance. The device remains electrically compatible at 60V/50A ratings.

Q: Is PSMN004-60B,118 suitable for applications requiring the exact FQB50N06TM specification? A: PSMN004-60B,118 exceeds FQB50N06TM specifications with 60V/75A rating and superior on-resistance (3.6 mOhm). It is suitable for direct replacement with the added benefit of increased current capacity and reduced power dissipation. No circuit modification is required.

Q: Can HUF75545S3ST be used in place of FQB50N06TM? A: HUF75545S3ST is electrically compatible with enhanced specifications: 80V Vdss and 75A continuous drain current. It operates in the same TO-263 D2PAK package and temperature range. Applications designed for 60V/50A operation will function correctly with this higher-rated device.

Q: What packaging options are available for substitute parts? A: Substitute parts are available in multiple packaging formats: tube (individual packaging), tape & reel (automated assembly), and cut tape with digi-reel. Selection depends on production method and volume requirements. All maintain identical TO-263 (D2PAK) surface mount footprint.

Q: Are all substitute parts ROHS3 compliant? A: Yes. All listed substitute parts carry ROHS3 compliance certification, matching the FQB50N06TM environmental standard. MSL 1 (unlimited moisture sensitivity level) is maintained across all alternatives.

Q: How does on-resistance (Rds On) affect device selection? A: Lower on-resistance reduces power dissipation and heat generation. FQB50N06TM specifies 22 mOhm at 25A/10V. PSMN004-60B,118 (3.6 mOhm) and IRFZ48RSPBF (18 mOhm) provide improved efficiency. Higher on-resistance devices (IRFZ44SPBF at 28 mOhm) remain functional but generate additional heat at equivalent current levels.

Q: What is the significance of gate charge (Qg) in substitute selection? A: Gate charge affects switching speed and gate driver power requirements. FQB50N06TM specifies 41 nC at 10V. Substitute parts range from 30 nC (IRFS3806TRLPBF) to 235 nC (HUF75545S3ST). Higher gate charge requires more gate driver current but does not prevent functional substitution in standard applications.

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