FQB50N06LTM N-Channel 60V 52.4A MOSFET Equivalent & Substitute Parts

Part Overview

The FQB50N06LTM is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 52.4A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263) surface mount package and is part of the QFET® series. This part carries an obsolete product status, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	52.4	A (Tc)
On-Resistance (Rds On) @ 26.2A, 10V	21	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 5V	32	nC
Input Capacitance (Ciss) @ 25V	1630	pF
Power Dissipation (Max) @ Tc	121	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FQB50N06LTM is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must meet or exceed 52.4A at 25°C
On-Resistance (Rds On): Lower values indicate improved performance; values within 21mOhm or lower are preferred
Package Type: D2PAK (TO-263) surface mount configuration required
Operating Temperature Range: Must support -55°C to 175°C minimum
Compliance: RoHS3 and REACH requirements must be maintained

Substitution Logic: Parts are grouped into three categories based on electrical performance relative to the FQB50N06LTM:

Direct Equivalents (60V, 50A–60A range): Parts with 60V Vdss and drain current between 50A and 60A, maintaining similar on-resistance and thermal characteristics.
Higher Current Capability (60V, >60A): Parts with 60V Vdss and drain current exceeding 60A, offering improved current handling with comparable or lower on-resistance.
Higher Voltage Rated (>60V): Parts with Vdss exceeding 60V, suitable for applications requiring additional voltage margin while maintaining compatible current ratings.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Dissipation @ Tc (W)	Product Status
FQB50N06LTM	onsemi	60	52.4	21	32	1630	121	Obsolete
IRFS3806TRLPBF	Infineon Technologies	60	43	15.8	30	1150	71	Active
IRFZ48STRLPBF	Vishay Siliconix	60	50	18	110	2400	190	Active
PSMN004-60B,118	Nexperia USA Inc.	60	75	3.6	168	8300	230	Active
PSMN005-75B,118	Nexperia USA Inc.	75	75	5	165	8250	230	Active
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8	20.9	1220	86	Active
STB55NF06LT4	STMicroelectronics	60	55	18	37	1700	95	Active
STB55NF06T4	STMicroelectronics	60	50	18	60	1300	110	Active
STB60NF06T4	STMicroelectronics	60	60	16	66	1810	110	Active
STB80NF10T4	STMicroelectronics	100	80	15	182	5500	300	Active

Engineering Selection Recommendations

Direct Replacement Candidates (60V, 50A–60A):

The STB55NF06LT4, STB55NF06T4, STB60NF06T4, and PSMN015-60BS,118 are active production parts with 60V Vdss ratings and drain currents between 50A and 60A. These devices maintain D2PAK packaging and operating temperature ranges compatible with the FQB50N06LTM. All candidates carry RoHS3 compliance and REACH unaffected status. The STB60NF06T4 offers the closest current rating match at 60A with improved on-resistance (16mOhm) compared to the original 21mOhm specification.

Enhanced Performance Alternatives (60V, >60A):

The PSMN004-60B,118 provides 75A continuous drain current at 60V with significantly reduced on-resistance (3.6mOhm) and higher power dissipation capability (230W). This part is suitable for applications where improved thermal performance and lower conduction losses are beneficial. The IRFZ48STRLPBF offers 50A at 60V with 18mOhm on-resistance and active product status.

Higher Voltage Rated Option:

The PSMN005-75B,118 is rated for 75V Vdss with 75A continuous drain current, providing additional voltage margin for applications requiring overvoltage protection. This part maintains D2PAK packaging and active production status.

Voltage Upgrade Path (100V):

The STB80NF10T4 operates at 100V Vdss with 80A continuous drain current. This part is applicable only to designs where higher voltage operation is required and circuit topology permits the increased gate charge (182nC) and input capacitance (5500pF).

All recommended substitutes maintain RoHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and operating temperature ranges of -55°C to 175°C or better. Product status verification confirms all alternatives are in active production.

Frequently Asked Questions (FAQ)

Q: Can the FQB50N06LTM be directly replaced with any of the listed substitutes?

A: Direct replacement capability depends on circuit requirements. Parts with identical 60V Vdss and drain current ratings between 50A and 60A (STB55NF06LT4, STB55NF06T4, STB60NF06T4, PSMN015-60BS,118) are mechanically and electrically compatible. Parts with higher current ratings or voltage ratings require circuit analysis to confirm suitability.

Q: What is the significance of on-resistance (Rds On) differences among substitutes?

A: On-resistance directly affects conduction losses and heat generation. Lower Rds On values reduce power dissipation and improve efficiency. The FQB50N06LTM specifies 21mOhm at 26.2A and 10V. Substitutes with lower Rds On (such as PSMN004-60B,118 at 3.6mOhm) reduce thermal load; those with comparable or slightly higher values maintain similar thermal behavior.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All listed substitutes use the D2PAK (TO-263-3) surface mount package with identical pinout and mechanical dimensions, enabling direct PCB compatibility without layout modifications.

Q: What compliance certifications apply to all substitutes?

A: All substitute parts listed carry RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of the FQB50N06LTM. Moisture sensitivity level is MSL 1 (unlimited) for all parts.

Q: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher Qg values increase switching losses and require higher gate drive current. The FQB50N06LTM specifies 32nC at 5V. Substitutes with similar or lower Qg values (PSMN015-60BS,118 at 20.9nC, IRFS3806TRLPBF at 30nC) reduce gate drive requirements.

Q: Is the STB80NF10T4 (100V) suitable as a substitute?

A: The STB80NF10T4 is mechanically compatible but operates at 100V Vdss versus the original 60V specification. This part is applicable only to designs where higher voltage operation is required. The increased gate charge (182nC) and input capacitance (5500pF) require gate driver circuit verification.

Q: What is the difference between active and obsolete product status?

A: Obsolete parts (FQB50N06LTM) are no longer manufactured and existing inventory is limited. Active production parts ensure long-term availability and supply chain continuity. All listed substitutes maintain active product status.

Q: Can substitutes with higher drain current ratings be used in place of the FQB50N06LTM?

A: Yes. Parts with higher current ratings (such as PSMN004-60B,118 at 75A) are backward compatible with designs requiring 52.4A. The circuit operates within the device's safe operating area. Verify that gate drive circuitry can accommodate any differences in gate charge and input capacitance.

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