FQB4P40TM Equivalent & Substitute Parts

Part Overview

The FQB4P40TM is a P-Channel MOSFET manufactured by onsemi, rated for 400V drain-to-source voltage with 3.5A continuous drain current. This device is packaged in the TO-263 (D2PAK) surface mount configuration and is part of the QFET® series. The FQB4P40TM is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

FQB4P40TM

onsemiIn Stock: 1223FQB4P40TM Datasheet

Current PartRFQ

IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQB4P40TM requires evaluation of the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: P-Channel topology must be maintained
• Drain-to-Source Voltage (Vdss): The substitute must support the application voltage requirement
• Continuous Drain Current (Id): The substitute must meet or exceed the current rating
• Drive Voltage: Gate drive voltage compatibility at 10V
• Rds On: On-state resistance characteristics
• Operating Temperature Range: Must encompass -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: TO-263-3 (D2PAK) form factor with 2 Leads + Tab

Compliance & Status:

• Product Status: Active status preferred for long-term availability
• Moisture Sensitivity Level: MSL 1 (Unlimited) acceptable
• REACH Status: REACH Unaffected acceptable

The IRF5210STRLPBF is identified as a substitute based on matching P-Channel topology, surface mount D2PAK packaging, compatible drive voltage, and active product status. However, the IRF5210STRLPBF operates at a lower maximum Vdss rating (100V versus 400V), which restricts its application to circuits operating below 100V.

Parameter Comparison

Engineering Selection Recommendations

For Applications Operating at 400V: The FQB4P40TM is the only part in this comparison rated for 400V operation. No direct substitute exists within the provided parts list that maintains the 400V Vdss rating. The IRF5210STRLPBF is not suitable for 400V applications due to its 100V maximum Vdss limitation.

For Applications Operating Below 100V: The IRF5210STRLPBF is a viable substitute for the FQB4P40TM in circuits where the maximum operating voltage does not exceed 100V. The IRF5210STRLPBF offers the following advantages:

• Active product status ensures long-term availability and supply chain continuity
• Higher continuous drain current rating (38A versus 3.5A) provides design margin
• Lower on-state resistance (60 mΩ versus 3.1 Ω) reduces power dissipation in switching applications
• Higher thermal capability (170W Tc versus 85W Tc) supports higher power dissipation scenarios
• Identical operating temperature range (-55°C to 150°C TJ)
• Identical D2PAK surface mount packaging
• ROHS3 Compliant status provides environmental compliance assurance

Substitution Constraints: The IRF5210STRLPBF exhibits higher gate charge (230 nC versus 23 nC) and higher input capacitance (2780 pF versus 680 pF), which may require gate drive circuit adjustments in high-frequency switching applications. The lower maximum gate voltage rating (±20V versus ±30V) must be verified against circuit design specifications.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF replace the FQB4P40TM in all applications?

A: No. The IRF5210STRLPBF is limited to applications operating at 100V or below. Applications requiring 400V operation must use the FQB4P40TM or identify alternative 400V-rated P-Channel MOSFETs from other manufacturers.

Q: What is the primary limitation of using the IRF5210STRLPBF as a substitute?

A: The IRF5210STRLPBF has a maximum drain-to-source voltage (Vdss) of 100V, compared to the FQB4P40TM's 400V rating. This voltage limitation restricts the IRF5210STRLPBF to lower-voltage circuit applications.

Q: Are the packages physically compatible?

A: Yes. Both the FQB4P40TM and IRF5210STRLPBF use the TO-263-3 (D2PAK) surface mount package with 2 leads plus tab. PCB footprints are identical, allowing direct physical replacement without layout modifications.

Q: Will the gate drive circuit require modification when substituting to the IRF5210STRLPBF?

A: The gate drive voltage compatibility is maintained at 10V. However, the IRF5210STRLPBF exhibits significantly higher gate charge (230 nC versus 23 nC) and input capacitance (2780 pF versus 680 pF). High-frequency switching applications may require gate drive circuit optimization to accommodate these higher capacitive loads.

Q: What is the impact of the lower maximum gate voltage rating on the IRF5210STRLPBF?

A: The IRF5210STRLPBF has a maximum gate-to-source voltage (Vgs Max) of ±20V, compared to the FQB4P40TM's ±30V. Circuit designs applying gate voltages exceeding ±20V cannot use the IRF5210STRLPBF without modification to the gate drive circuit.

Q: Is the IRF5210STRLPBF suitable for long-term production use?

A: Yes. The IRF5210STRLPBF has an active product status, indicating ongoing manufacturer support and availability. The FQB4P40TM is classified as obsolete, making the IRF5210STRLPBF preferable for new designs operating within its voltage and current specifications.

Q: How do the on-state resistance characteristics compare?

A: The IRF5210STRLPBF has significantly lower on-state resistance (60 mΩ @ 38A, 10V) compared to the FQB4P40TM (3.1 Ω @ 1.75A, 10V). This lower resistance reduces conduction losses in switching applications, resulting in improved efficiency and reduced thermal dissipation.

Q: Are there compliance or certification differences between these parts?

A: The IRF5210STRLPBF carries ROHS3 Compliant certification. Both parts are REACH Unaffected and have MSL 1 (Unlimited) moisture sensitivity ratings. The IRF5210STRLPBF provides additional environmental compliance assurance through its ROHS3 status.