FQB4P25TM Equivalent & Substitute Parts

Part Overview

The FQB4P25TM is a P-Channel MOSFET manufactured by onsemi, rated for 250V drain-to-source voltage with 4A continuous drain current at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is part of the QFET® series. The FQB4P25TM is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain functional compatibility within the electrical and mechanical constraints of the original application.

Substiute Parts

FQB4P25TM

onsemiIn Stock: 1890FQB4P25TM Datasheet

Current PartRFQ

IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQB4P25TM requires evaluation of electrical and mechanical compatibility based on the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: P-Channel topology must be maintained
• Technology: MOSFET (Metal Oxide) construction
• Mounting Type: Surface Mount configuration
• Package / Case: TO-263 (D2PAK) physical form factor
• Operating Temperature Range: Must encompass or exceed -55°C ~ 150°C (TJ)
• Drain to Source Voltage (Vdss): Must equal or exceed 250V for voltage rating compatibility
• Current - Continuous Drain (Id): Must equal or exceed 4A at 25°C for current capacity
• Vgs (Max): Must accommodate ±30V gate voltage specification

Electrical Performance Parameters:

• Rds On (Max): Lower values indicate improved performance; substitutes with lower on-resistance are acceptable
• Gate Charge (Qg): Lower values reduce switching losses; substitutes with lower gate charge are acceptable
• Input Capacitance (Ciss): Lower values reduce input impedance; substitutes with lower input capacitance are acceptable
• Power Dissipation: Substitutes with equal or higher power dissipation ratings are acceptable

The IRF5210STRLPBF does not meet the mandatory Vdss requirement of 250V, as it is rated for 100V maximum. This substitute is therefore not electrically compatible for applications requiring the full 250V voltage rating of the original FQB4P25TM.

Parameter Comparison

Engineering Selection Recommendations

The IRF5210STRLPBF cannot serve as a direct substitute for the FQB4P25TM due to critical electrical incompatibilities:

Voltage Rating Mismatch: The FQB4P25TM is rated for 250V Vdss, while the IRF5210STRLPBF is rated for 100V Vdss. Applications operating at voltages exceeding 100V will cause device failure or degradation in the substitute part.

Gate Voltage Specification Mismatch: The FQB4P25TM accepts ±30V maximum gate voltage, while the IRF5210STRLPBF is limited to ±20V. Circuits designed for the original part's ±30V gate voltage specification will exceed the substitute's maximum rating.

Product Status Consideration: The FQB4P25TM is classified as obsolete, while the IRF5210STRLPBF maintains active product status with 36,088 pieces in stock. However, active status does not override electrical incompatibility.

Compliance and Certifications: Both devices are REACH Unaffected and classified under ECCN EAR99. The IRF5210STRLPBF carries RoHS3 Compliance certification. Both devices have MSL rating of 1 (Unlimited).

For applications requiring a 250V P-Channel MOSFET in D2PAK packaging, alternative sources must be evaluated against the complete electrical specification set of the FQB4P25TM, particularly the 250V Vdss and ±30V Vgs requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF replace the FQB4P25TM in my circuit?

A: No. The IRF5210STRLPBF has a maximum Vdss rating of 100V, while the FQB4P25TM is rated for 250V. If your application operates above 100V, the substitute will not function. Additionally, the IRF5210STRLPBF is limited to ±20V gate voltage versus the FQB4P25TM's ±30V specification.

Q: Why does the IRF5210STRLPBF have higher gate charge and input capacitance?

A: The IRF5210STRLPBF is designed for higher current capacity (38A versus 4A), which results in larger die geometry and increased parasitic capacitances. Higher gate charge and input capacitance are inherent trade-offs in higher-current MOSFET designs.

Q: Are both devices in the same package?

A: Yes. Both the FQB4P25TM and IRF5210STRLPBF use the TO-263-3 (D2PAK) Surface Mount package with 2 leads plus tab. Package compatibility does not ensure electrical compatibility.

Q: What is the significance of the FQB4P25TM being obsolete?

A: Obsolete status indicates the part is no longer manufactured by onsemi. Existing inventory may be available through authorized distributors, but long-term availability is not guaranteed. New designs should evaluate active alternatives that meet the complete electrical specification.

Q: Can I use the IRF5210STRLPBF in a lower-voltage application designed for the FQB4P25TM?

A: The IRF5210STRLPBF can operate at voltages up to 100V. If your application operates within this voltage range and does not require the ±30V gate voltage specification, the IRF5210STRLPBF may be evaluated for compatibility. However, this requires full circuit analysis to confirm all electrical parameters remain within acceptable limits.

Q: What parameters must an alternative substitute meet?

A: Any substitute must satisfy: P-Channel FET type, MOSFET technology, minimum 250V Vdss rating, minimum 4A continuous drain current at 25°C, ±30V maximum gate voltage rating, Surface Mount configuration, and TO-263 (D2PAK) package. Operating temperature range must encompass -55°C to 150°C (TJ).

Q: Are there compliance differences between these devices?

A: Both devices are REACH Unaffected and classified as EAR99. The IRF5210STRLPBF carries RoHS3 Compliance certification. Both have MSL rating of 1 (Unlimited). Compliance status does not affect electrical substitution compatibility.