FQB3P50TM Equivalent & Substitute Parts

Part Overview

The FQB3P50TM is a P-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 2.7A continuous drain current at 25°C. This device is packaged in the TO-263 (D2PAK) surface mount configuration and is part of the QFET® series. The FQB3P50TM is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain functional compatibility within the electrical and mechanical constraints of the original application.

Substiute Parts

FQB3P50TM

onsemiIn Stock: 1841FQB3P50TM Datasheet

Current PartRFQ

IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQB3P50TM requires evaluation of electrical and mechanical compatibility based on the following criteria:

Electrical Compatibility Parameters:

• FET Type: Must be P-Channel MOSFET
• Technology: Must be MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 500V
• Current - Continuous Drain (Id): Substitute must equal or exceed 2.7A at 25°C
• Operating Temperature Range: Must encompass -55°C to 150°C (TJ)
• Gate Charge (Qg): Lower values indicate faster switching performance
• Rds On: Lower values indicate reduced conduction losses

Mechanical Compatibility Parameters:

• Mounting Type: Must be Surface Mount
• Package / Case: Must be compatible with TO-263-3 (D2PAK) footprint

The IRF5210STRLPBF is identified as a substitute part. However, this part exhibits a lower Vdss rating (100V versus 500V), which represents a significant electrical constraint. While the IRF5210STRLPBF exceeds the current rating requirement (38A versus 2.7A) and maintains the same package type, the reduced voltage rating limits its applicability to circuits operating at lower voltage levels. Substitution is valid only when the application voltage does not exceed 100V.

Parameter Comparison

Engineering Selection Recommendations

Primary Consideration: Voltage Rating

The IRF5210STRLPBF operates at a maximum Vdss of 100V, compared to the FQB3P50TM's 500V rating. Direct substitution is applicable only in applications where the drain-to-source voltage does not exceed 100V. For circuits requiring 500V operation, the IRF5210STRLPBF is not suitable.

Secondary Considerations:

The IRF5210STRLPBF is in active production status, whereas the FQB3P50TM is obsolete. This provides supply chain continuity for new designs operating within the 100V voltage constraint.

Both parts share identical operating temperature ranges (-55°C to 150°C), identical moisture sensitivity levels (MSL 1), and identical regulatory classifications (REACH Unaffected, ECCN EAR99), ensuring compliance equivalence.

The IRF5210STRLPBF exhibits higher gate charge (230 nC versus 23 nC) and higher input capacitance (2780 pF versus 660 pF), which may impact gate drive circuit design and switching speed characteristics. Circuit simulation or testing is necessary to confirm performance equivalence in the specific application.

The IRF5210STRLPBF's lower on-resistance (60 mOhm versus 4.9 Ohm) and higher current rating (38A versus 2.7A) provide improved thermal performance and reduced conduction losses in low-voltage applications.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF directly replace the FQB3P50TM in all applications?

A: No. The IRF5210STRLPBF has a maximum Vdss of 100V, while the FQB3P50TM is rated for 500V. Substitution is valid only for applications operating at 100V or below. For circuits requiring 500V operation, alternative parts with higher voltage ratings must be selected.

Q: What is the primary difference between these two parts?

A: The primary difference is the drain-to-source voltage rating. The FQB3P50TM is designed for high-voltage applications (500V), while the IRF5210STRLPBF is optimized for lower-voltage, higher-current applications (100V, 38A). Both are P-Channel MOSFETs in the same D2PAK package.

Q: Are the packages physically compatible?

A: Yes. Both parts use the TO-263-3 (D2PAK) surface mount package with identical pinout and footprint. PCB layout modifications are not required for package compatibility.

Q: How do the gate drive requirements differ?

A: The IRF5210STRLPBF requires higher gate charge (230 nC versus 23 nC) and has higher input capacitance (2780 pF versus 660 pF). Gate drive circuits must be evaluated to ensure adequate current and voltage capability for the substitute part.

Q: What is the product status difference, and why does it matter?

A: The FQB3P50TM is obsolete and no longer manufactured by onsemi. The IRF5210STRLPBF is in active production by Infineon Technologies, ensuring long-term availability for new designs and production continuity.

Q: Are there regulatory or compliance differences?

A: No. Both parts share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and moisture sensitivity levels (MSL 1). Regulatory compliance is equivalent.

Q: What thermal performance differences exist?

A: The IRF5210STRLPBF has higher maximum power dissipation at Tc (170W versus 85W), indicating superior thermal capacity. However, the lower on-resistance (60 mOhm versus 4.9 Ohm) results in reduced conduction losses in high-current applications.

Q: Can I use the IRF5210STRLPBF in a 500V circuit?

A: No. Using the IRF5210STRLPBF in a 500V circuit will result in device failure due to exceeding the maximum Vdss rating. The part is rated for 100V maximum.