FQB3P20TM Equivalent & Substitute Parts

Part Overview

The FQB3P20TM is a P-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with a continuous drain current of 2.8A at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is part of the QFET® series. The FQB3P20TM is classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain functional compatibility within the electrical and mechanical constraints of the original application.

Substiute Parts

FQB3P20TM

onsemiIn Stock: 1698FQB3P20TM Datasheet

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IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FQB3P20TM must satisfy the following electrical and mechanical criteria:

Primary Substitution Criteria:

• FET Type: P-Channel MOSFET (Metal Oxide technology)
• Mounting Type: Surface Mount
• Package: TO-263 (D2PAK) or equivalent footprint compatibility
• Drain to Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must equal or exceed 2.8A at 25°C
• Gate Drive Voltage: 10V maximum Rds On specification
• Operating Temperature Range: Must support -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

• Vgs(th) threshold voltage characteristics
• Gate charge (Qg) specifications
• Input capacitance (Ciss) ratings
• Power dissipation capability
• Moisture sensitivity level and compliance certifications

The IRF5210STRLPBF is identified as a substitute part. However, this device exhibits a lower Vdss rating (100V versus 200V), which represents a significant electrical parameter deviation. This substitution is valid only in applications where the circuit voltage stress does not exceed 100V, and where the higher current capability (38A versus 2.8A) and lower on-resistance (60mOhm versus 2.7Ohm) provide functional equivalence within the reduced voltage envelope.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The FQB3P20TM is classified as obsolete. The IRF5210STRLPBF is classified as active, ensuring ongoing availability and manufacturing support from Infineon Technologies.

Compliance and Certifications: Both devices are REACH Unaffected and classified under ECCN EAR99. The IRF5210STRLPBF carries RoHS3 compliance certification, providing additional regulatory alignment for new designs and production environments requiring RoHS compliance.

Substitution Validity: The IRF5210STRLPBF is a valid substitute for the FQB3P20TM only in applications where the circuit maximum voltage stress does not exceed 100V. The reduced Vdss rating is the primary limiting factor for substitution. In circuits operating at voltages above 100V, the IRF5210STRLPBF cannot be used as a direct replacement.

Electrical Performance Differences: The IRF5210STRLPBF exhibits significantly different electrical characteristics despite package compatibility. The higher gate charge (230 nC versus 8 nC) and input capacitance (2780 pF versus 250 pF) will affect gate drive circuit design and switching speed. The substantially lower on-resistance (60mOhm versus 2.7Ohm) reduces conduction losses but requires verification of gate drive capability to achieve full performance.

Inventory and Supply Chain: The IRF5210STRLPBF has 36,088 pieces in stock, compared to 1,645 pieces for the FQB3P20TM. This availability advantage supports long-term production continuity.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF be used as a direct pin-for-pin replacement for the FQB3P20TM?

A: The IRF5210STRLPBF shares the same TO-263 (D2PAK) package footprint and pinout, enabling direct PCB placement. However, electrical compatibility is limited by the reduced Vdss rating (100V versus 200V). Direct substitution is valid only in circuits where maximum voltage stress does not exceed 100V.

Q: What is the primary limitation when substituting the IRF5210STRLPBF for the FQB3P20TM?

A: The IRF5210STRLPBF has a maximum drain-to-source voltage rating of 100V, compared to the FQB3P20TM's 200V rating. Applications requiring voltage operation above 100V cannot use the IRF5210STRLPBF without risk of device failure.

Q: How do the gate drive characteristics differ between these two devices?

A: The IRF5210STRLPBF requires significantly higher gate charge (230 nC versus 8 nC) and exhibits higher input capacitance (2780 pF versus 250 pF). Gate drive circuits must be verified to supply adequate current and voltage to properly switch the IRF5210STRLPBF within the required timing specifications.

Q: Are there compliance or regulatory differences between these devices?

A: Both devices are REACH Unaffected and EAR99 classified. The IRF5210STRLPBF carries RoHS3 compliance certification, while the FQB3P20TM does not specify RoHS status. For applications requiring RoHS compliance, the IRF5210STRLPBF provides regulatory alignment.

Q: What are the thermal performance implications of substitution?

A: The IRF5210STRLPBF has higher maximum power dissipation at Tc (170W versus 52W) and significantly lower on-resistance (60mOhm versus 2.7Ohm). This results in reduced conduction losses and improved thermal performance in current-limited applications. Thermal design verification is required to confirm adequate heat dissipation.

Q: Is the IRF5210STRLPBF suitable for high-frequency switching applications?

A: The IRF5210STRLPBF's higher gate charge and input capacitance will increase switching losses and reduce maximum switching frequency compared to the FQB3P20TM. Circuit simulation and bench testing are necessary to confirm suitability for specific frequency requirements.

Q: What is the moisture sensitivity level for both devices?

A: Both the FQB3P20TM and IRF5210STRLPBF are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage, handling, or reflow processes.