FQB34P10TM P-Channel MOSFET 100V 33.5A Equivalent & Substitute Parts

Part Overview

The FQB34P10TM is an onsemi QFET® series P-Channel MOSFET rated for 100V drain-to-source voltage with 33.5A continuous drain current at 25°C. The device is packaged in Surface Mount TO-263 (D2PAK) configuration and is currently in Active product status with 26,282 units in stock inventory.

Substitute parts are identified when equivalent electrical performance parameters align with the main part specifications, enabling direct replacement in circuit applications. The FQB34P10TM has two qualified substitute parts: the Infineon IRF5210STRLPBF (Active status) and the Infineon AUIRF5210STRL (Last Time Buy status).

Substiute Parts

FQB34P10TM
onsemiIn Stock: 26333FQB34P10TM Datasheet
FQB34P10TM
Current Part
AUIRF5210STRL
Infineon TechnologiesIn Stock: 2124AUIRF5210STRL Datasheet
AUIRF5210STRL
Similar
IRF5210STRLPBF
Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet
IRF5210STRLPBF
Similar

Key Parameters

Parameter FQB34P10TM
Manufacturer onsemi
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 33.5A (Tc)
Drive Voltage (Max Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2910 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for P-Channel MOSFET devices is determined by alignment of the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
  • Gate-Source Voltage (Vgs): Must support ±25V or higher
  • Threshold Voltage (Vgs(th)): Must be 4V or lower at 250µA
  • On-State Resistance (Rds On): Must not exceed 60mOhm at specified conditions
  • Operating Temperature Range: Must encompass -55°C to 175°C minimum

Mechanical Compatibility Criteria:

  • Package Type: TO-263-3 / D2PAK (2 Leads + Tab) Surface Mount
  • Mounting Type: Surface Mount
  • Pin Configuration: Compatible with D2PAK footprint

Regulatory & Compliance Criteria:

  • RoHS3 Compliance: Required
  • Moisture Sensitivity Level: MSL 1 (Unlimited)

Both substitute parts meet these criteria with equivalent or superior electrical ratings and identical mechanical packaging specifications.

Parameter Comparison

Parameter FQB34P10TM (onsemi) IRF5210STRLPBF (Infineon) AUIRF5210STRL (Infineon)
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 100 V 100 V 100 V
Continuous Drain Current (Id) @ 25°C 33.5A (Tc) 38A (Tc) 38A (Tc)
Drive Voltage (Max Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 16.75A, 10V 60mOhm @ 38A, 10V 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 230 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±25V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2910 pF @ 25 V 2780 pF @ 25 V 2780 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 155W (Tc) 3.1W (Ta), 170W (Tc) 3.1W (Ta), 170W (Tc)
Operating Temperature Range -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Last Time Buy

Engineering Selection Recommendations

IRF5210STRLPBF (Infineon Technologies) - Primary Substitute

The IRF5210STRLPBF is the recommended substitute for the FQB34P10TM. This device maintains Active product status with 36,088 units in current inventory. Electrical parameters are equivalent or superior: 38A continuous drain current (versus 33.5A), identical 60mOhm on-state resistance at 10V drive voltage, and matching threshold voltage specifications. The D2PAK Surface Mount package is mechanically identical. Both devices are ROHS3 compliant with MSL 1 rating. The operating temperature range of -55°C to 150°C covers the primary operating window, though the FQB34P10TM extends to 175°C. Gate charge is higher at 230nC versus 110nC, and maximum gate-source voltage is ±20V versus ±25V on the original part.

AUIRF5210STRL (Infineon Technologies) - Secondary Substitute

The AUIRF5210STRL is a qualified substitute with identical electrical specifications to the IRF5210STRLPBF. However, this device carries Last Time Buy product status with 2,107 units in inventory. Selection of this part should be limited to applications where long-term supply continuity is not a requirement. Electrical and mechanical compatibility with the FQB34P10TM is equivalent to the IRF5210STRLPBF.

Compliance & Regulatory Status

All three devices maintain ROHS3 compliance, REACH Unaffected status, and MSL 1 (Unlimited) moisture sensitivity rating. ECCN classification is EAR99 for all parts, and HTSUS code 8541.29.0095 applies uniformly.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF directly replace the FQB34P10TM in existing circuit designs?

A: Yes. Both devices share identical drain-to-source voltage (100V), matching on-state resistance (60mOhm @ 10V), equivalent threshold voltage (4V @ 250µA), and identical D2PAK Surface Mount packaging. Electrical performance is compatible for direct substitution.

Q: What is the significance of the higher gate charge (230nC) in the Infineon substitutes compared to the FQB34P10TM (110nC)?

A: Gate charge affects switching speed and driver circuit requirements. The higher gate charge in the IRF5210STRLPBF and AUIRF5210STRL requires additional charge delivery from the gate driver circuit. Circuit designs must accommodate this parameter difference during implementation.

Q: Why does the FQB34P10TM specify ±25V maximum gate-source voltage while the Infineon substitutes specify ±20V?

A: The FQB34P10TM provides a wider gate voltage tolerance window. Designs operating within ±20V gate voltage are compatible with all three devices. Designs requiring gate voltages between ±20V and ±25V must use the FQB34P10TM.

Q: What is the difference between the IRF5210STRLPBF and AUIRF5210STRL?

A: Both devices have identical electrical specifications and D2PAK packaging. The primary difference is product status: IRF5210STRLPBF is Active with 36,088 units in stock, while AUIRF5210STRL is Last Time Buy with 2,107 units in stock. For new designs and long-term applications, the IRF5210STRLPBF is the preferred selection.

Q: Are there temperature range limitations when substituting the FQB34P10TM with Infineon parts?

A: The FQB34P10TM operates from -55°C to 175°C (TJ), while both Infineon substitutes operate from -55°C to 150°C (TJ). Applications requiring operation above 150°C must use the FQB34P10TM. Applications within -55°C to 150°C are compatible with all three devices.

Q: Do all three devices meet RoHS3 compliance requirements?

A: Yes. The FQB34P10TM, IRF5210STRLPBF, and AUIRF5210STRL are all ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. All devices are REACH Unaffected and classified as EAR99 for export control purposes.

Q: What is the continuous drain current difference between the FQB34P10TM and the Infineon substitutes?

A: The FQB34P10TM is rated for 33.5A continuous drain current at 25°C (Tc), while both Infineon substitutes are rated for 38A. The higher current rating of the substitutes provides additional design margin and thermal headroom in applications operating near maximum current specifications.

Q: Is the D2PAK package footprint identical across all three devices?

A: Yes. All three devices use the TO-263-3 D2PAK (2 Leads + Tab) Surface Mount package with identical pin configuration and footprint geometry. Direct PCB layout compatibility is maintained.

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