FQB32N20CTM N-Channel MOSFET 200V 28A Equivalent & Substitute Parts

Part Overview

The FQB32N20CTM is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 28A continuous drain current in the QFET® series. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The part is housed in a Surface Mount TO-263 (D2PAK) package with a 2-lead plus tab configuration. Substitutes must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the D2PAK package standard.

Key Parameters

Parameter	FQB32N20CTM	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	28	A (Tc)
Rds On (Max) @ Id, Vgs	82 mOhm @ 14A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110	nC @ 10V
Input Capacitance (Ciss) (Max)	2220	pF @ 25V
Power Dissipation (Max)	156	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263-3 (D2PAK)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution eligibility for the FQB32N20CTM is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 200V minimum
Package Type: TO-263-3 (D2PAK) Surface Mount configuration
FET Type: N-Channel MOSFET
Technology: Metal Oxide Semiconductor

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 28A
Rds On (Max): Equal to or lower than 82 mOhm (lower resistance preferred for thermal performance)
Gate Threshold Voltage: Within ±1V of 4V specification
Operating Temperature Range: Minimum -55°C to 150°C

Secondary Considerations:

Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation capability: Higher ratings provide thermal margin

The substitute parts listed below meet the mandatory matching criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter	FQB32N20CTM (onsemi)	IRFS4620TRLPBF (Infineon)	PHB33NQ20T,118 (Nexperia)	STB19NF20 (STMicro)	STB30NF20 (STMicro)	STB30NF20L (STMicro)	Unit
Vdss	200	200	200	200	200	200	V
Id @ 25°C (Tc)	28	24	32.7	15	30	30	A
Rds On (Max) @ 10V	82 @ 14A	77.5 @ 15A	77 @ 15A	160 @ 7.5A	75 @ 15A	75 @ 15A	mOhm
Vgs(th) (Max)	4 @ 250µA	5 @ 100µA	4 @ 1mA	4 @ 250µA	4 @ 250µA	3 @ 250µA	V
Qg (Max) @ 10V	110	38	32.2	24	38	65	nC
Ciss (Max)	2220 @ 25V	1710 @ 50V	1870 @ 25V	800 @ 25V	1597 @ 25V	1990 @ 25V	pF
Power Dissipation (Max) Tc	156	144	230	90	125	150	W
Operating Temperature Range	-55 to 150	-55 to 175	-55 to 175	-55 to 150	-55 to 150	-55 to 175	°C
Product Status	Obsolete	Active	Active	Active	Active	Active	—
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

PHB33NQ20T,118 (Nexperia USA Inc.) — This part provides the closest electrical match to the FQB32N20CTM. It exceeds the 28A continuous drain current requirement with 32.7A capability, maintains identical 200V Vdss rating, and delivers superior power dissipation at 230W (Tc). The Rds On specification of 77 mOhm is lower than the original part, reducing conduction losses. The part is ROHS3 compliant and carries active product status with extended operating temperature range to 175°C. Gate charge is significantly reduced at 32.2 nC, improving switching efficiency.

STB30NF20 (STMicroelectronics) — This substitute meets the 28A requirement with 30A continuous drain current and maintains 200V Vdss. The Rds On of 75 mOhm is superior to the original specification. Power dissipation capability of 125W (Tc) is lower than the original but remains adequate for most applications. The part is ROHS3 compliant and carries active product status. Operating temperature range matches the original at -55°C to 150°C.

Secondary Substitutes (Application-Dependent):

STB30NF20L (STMicroelectronics) — This automotive-grade variant (AEC-Q101 qualified) provides 30A continuous drain current with identical 200V Vdss. Power dissipation is enhanced to 150W (Tc) with extended operating temperature to 175°C. The lower gate threshold voltage of 3V (versus 4V) may require gate drive circuit verification. ROHS3 compliant with active product status.

IRFS4620TRLPBF (Infineon Technologies) — This part meets the 200V Vdss requirement but provides 24A continuous drain current, which is below the original 28A specification. Rds On of 77.5 mOhm is superior. Power dissipation of 144W (Tc) is lower than the original. The part is ROHS3 compliant with active product status and extended temperature range to 175°C. Suitable for applications where 24A current capacity is sufficient.

Not Recommended for Direct Substitution:

STB19NF20 (STMicroelectronics) — This part provides only 15A continuous drain current, which is insufficient for applications requiring the full 28A capability of the FQB32N20CTM. Rds On of 160 mOhm is significantly higher, resulting in increased conduction losses and thermal dissipation. This part is suitable only for lower-current applications.

Frequently Asked Questions (FAQ)

Q: Can the PHB33NQ20T,118 directly replace the FQB32N20CTM in all applications?

A: The PHB33NQ20T,118 meets all mandatory electrical and package requirements for direct substitution. It exceeds the 28A current rating with 32.7A capability, maintains 200V Vdss, and is housed in the same TO-263-3 (D2PAK) package. The lower Rds On and gate charge values provide improved performance. Verification of gate drive voltage compatibility is recommended, as the part is specified at 10V drive voltage matching the original.

Q: What is the difference between STB30NF20 and STB30NF20L?

A: Both parts provide 30A continuous drain current and 200V Vdss in the same D2PAK package. The STB30NF20L is automotive-grade (AEC-Q101 qualified) with enhanced power dissipation (150W versus 125W), extended operating temperature range (175°C versus 150°C), and lower gate threshold voltage (3V versus 4V). The STB30NF20L is suitable for automotive and high-reliability applications requiring extended temperature operation.

Q: Why is STB19NF20 listed as a substitute if it only provides 15A?

A: The STB19NF20 is listed as a substitute for lower-current applications where the full 28A capability is not required. It maintains the 200V Vdss rating and D2PAK package compatibility. This part is not suitable for applications requiring continuous drain currents above 15A.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts listed (IRFS4620TRLPBF, PHB33NQ20T,118, STB19NF20, STB30NF20, and STB30NF20L) are ROHS3 compliant. The original FQB32N20CTM is REACH unaffected. All parts carry MSL 1 (Unlimited) moisture sensitivity classification.

Q: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge (Qg) reduces the energy required to switch the MOSFET on and off, resulting in lower switching losses and improved efficiency. The substitute parts generally feature lower gate charge values than the original FQB32N20CTM (110 nC), with PHB33NQ20T,118 at 32.2 nC and STB19NF20 at 24 nC. This improvement reduces heat generation and allows for higher switching frequencies without thermal penalty.

Q: Can I use IRFS4620TRLPBF if my application requires 28A continuous current?

A: The IRFS4620TRLPBF is rated for 24A continuous drain current, which is 4A below the FQB32N20CTM specification. Use of this part in applications requiring sustained 28A operation will result in thermal stress and potential device failure. This part is suitable only for applications where continuous drain current does not exceed 24A.

Q: What package considerations apply to these substitutes?

A: All substitute parts are housed in the TO-263-3 (D2PAK) package with 2 leads plus tab configuration, matching the original FQB32N20CTM. This ensures mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements. No package modifications are required for substitution.

Q: How do I verify gate drive voltage compatibility?

A: The FQB32N20CTM specifies maximum Rds On at 10V gate drive voltage. All substitute parts are similarly specified at 10V drive voltage, ensuring compatibility with existing gate drive circuits. Verify that your gate drive circuit can supply ±30V maximum gate voltage (or ±20V for some substitutes) and confirm gate threshold voltage specifications for your specific application requirements.

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