FQB1P50TM P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQB1P50TM is a P-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 1.5A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters.

Substiute Parts

FQB1P50TM

onsemiIn Stock: 3905FQB1P50TM Datasheet

Current PartRFQ

IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of P-Channel MOSFETs is determined by the following critical parameters:

Channel Type & Polarity: Both the main part and substitute must be P-Channel MOSFETs to maintain circuit functionality.

Drain-to-Source Voltage (Vdss): The substitute must equal or exceed the Vdss rating of the original part. The FQB1P50TM operates at 500V; therefore, substitute parts must support this voltage level or higher.

Continuous Drain Current (Id): The substitute must support the required continuous drain current at the specified temperature. The FQB1P50TM is rated for 1.5A; substitutes must meet or exceed this specification.

Gate Drive Voltage: Both parts operate at 10V maximum Rds On drive voltage, ensuring compatibility with existing gate drive circuits.

Package Compatibility: Both the main part and substitute must use the same physical package (TO-263 D2PAK) to ensure mechanical fit and PCB layout compatibility.

Thermal & Environmental Specifications: Operating temperature range, power dissipation capability, and compliance certifications (RoHS3, REACH) must be maintained.

The IRF5210STRLPBF does not meet the voltage substitution requirement and is therefore not a direct substitute for the FQB1P50TM.

Parameter Comparison

Engineering Selection Recommendations

The IRF5210STRLPBF cannot serve as a direct substitute for the FQB1P50TM due to critical voltage rating incompatibility. The IRF5210STRLPBF is rated for 100V Vdss, which is insufficient for applications requiring 500V operation. Substitution in such applications would result in device failure or inadequate voltage blocking capability.

Both devices maintain ROHS3 compliance and identical operating temperature ranges (-55°C to 150°C), supporting environmental and regulatory compatibility. However, the voltage mismatch is a fundamental barrier to substitution.

For applications requiring a 500V P-Channel MOSFET in TO-263 D2PAK packaging, alternative parts with equivalent or superior voltage ratings must be sourced. The obsolete status of the FQB1P50TM necessitates identification of active production alternatives with matching electrical specifications.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF replace the FQB1P50TM in my circuit?

A: No. The IRF5210STRLPBF is rated for 100V Vdss, while the FQB1P50TM requires 500V operation. Using the IRF5210STRLPBF in a 500V application will result in device failure.

Q: What is the primary reason these parts are not interchangeable?

A: The drain-to-source voltage (Vdss) rating is fundamentally different. The FQB1P50TM operates at 500V, while the IRF5210STRLPBF operates at 100V. Voltage rating is a non-negotiable parameter for MOSFET substitution.

Q: Are the packages physically compatible?

A: Yes. Both devices use the TO-263-3 D2PAK surface mount package, ensuring identical PCB footprints and mechanical fit. However, package compatibility alone does not qualify a part as a substitute if electrical specifications do not match.

Q: Why is the FQB1P50TM listed as obsolete?

A: The FQB1P50TM is classified as obsolete by onsemi, indicating it is no longer in active production. Designs using this part must transition to active production alternatives to ensure long-term component availability.

Q: What parameters must match for a valid MOSFET substitution?

A: Critical parameters include FET type (P-Channel), drain-to-source voltage (Vdss), continuous drain current (Id), gate drive voltage, maximum gate-source voltage (Vgs Max), package type, and operating temperature range. All must be equal to or exceed the original part specifications.

Q: Does the higher current rating of the IRF5210STRLPBF make it suitable for the FQB1P50TM application?

A: No. While the IRF5210STRLPBF has a higher current rating (38A vs. 1.5A), this advantage is negated by its insufficient voltage rating (100V vs. 500V). Current capability cannot compensate for voltage rating deficiency.

Q: Are both devices RoHS compliant?

A: Yes. Both the FQB1P50TM and IRF5210STRLPBF are ROHS3 compliant, meeting environmental and regulatory requirements for lead-free manufacturing.