FQB17P10TM Equivalent & Substitute Parts

Part Overview

The FQB17P10TM is a P-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 16.5A continuous drain current. This device is packaged in the TO-263 (D2PAK) surface mount configuration and is classified as obsolete. Due to its obsolete status, equivalent substitute parts with compatible electrical and mechanical specifications are necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	16.5A (Tc)
Drive Voltage (Max Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
Power Dissipation (Max)	3.75W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FQB17P10TM is determined by the following critical parameters:

Electrical Compatibility Requirements:

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V (minimum requirement)
Continuous Drain Current (Id): Must meet or exceed 16.5A at 25°C
Drive Voltage: 10V (Max Rds On specification)
Gate Threshold Voltage (Vgs(th)): Compatible range around 4V @ 250µA
Maximum Gate Voltage (Vgs): Must accommodate ±30V or greater

Mechanical Compatibility Requirements:

Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Environmental & Compliance Requirements:

Moisture Sensitivity Level (MSL): 1 (Unlimited)
Operating Temperature Range: Must support -55°C ~ 175°C or equivalent

The substitute parts identified (IRF5210STRLPBF and IXTA18P10T) meet these core requirements with matching or superior electrical ratings and identical package specifications.

Parameter Comparison

Parameter	FQB17P10TM (onsemi)	IRF5210STRLPBF (Infineon)	IXTA18P10T (IXYS)
FET Type	P-Channel	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	100 V	100 V
Current - Continuous Drain (Id) @ 25°C	16.5A (Tc)	38A (Tc)	18A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 8.25A, 10V	60mOhm @ 38A, 10V	120mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V	230 nC @ 10 V	39 nC @ 10 V
Vgs (Max)	±30V	±20V	±15V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V	2780 pF @ 25 V	2100 pF @ 25 V
Power Dissipation (Max)	3.75W (Ta), 100W (Tc)	3.1W (Ta), 170W (Tc)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	D2PAK	TO-263AA
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

IRF5210STRLPBF (Infineon Technologies): This substitute provides superior current handling capability at 38A continuous drain current, exceeding the FQB17P10TM requirement of 16.5A. The device maintains identical 100V Vdss rating and 10V drive voltage specification. The IRF5210STRLPBF is classified as Active product status with RoHS3 compliance, ensuring long-term availability and regulatory alignment. The D2PAK package is mechanically compatible. Note that maximum gate voltage is reduced to ±20V and operating temperature maximum is 150°C compared to the original 175°C specification.

IXTA18P10T (IXYS): This substitute provides 18A continuous drain current, closely matching the FQB17P10TM at 16.5A. The device maintains identical 100V Vdss rating and 10V drive voltage specification. The IXTA18P10T is classified as Active product status with RoHS3 compliance. The TO-263AA package is mechanically compatible with the original D2PAK specification. Maximum gate voltage is reduced to ±15V and operating temperature maximum is 150°C compared to the original 175°C specification. Gate charge specification matches the original at 39 nC @ 10V.

Both substitute parts are suitable for applications where the FQB17P10TM is no longer available. Selection between them depends on specific application requirements regarding current capacity, gate voltage tolerance, and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF directly replace the FQB17P10TM in all applications?

A: The IRF5210STRLPBF is electrically compatible for applications requiring up to 16.5A continuous drain current. The higher current rating (38A) provides design margin. However, the reduced maximum gate voltage (±20V versus ±30V) and lower maximum operating temperature (150°C versus 175°C) must be evaluated against specific circuit requirements.

Q: Can the IXTA18P10T directly replace the FQB17P10TM in all applications?

A: The IXTA18P10T is electrically compatible for applications requiring up to 16.5A continuous drain current. The current rating of 18A closely matches the original specification. However, the reduced maximum gate voltage (±15V versus ±30V) and lower maximum operating temperature (150°C versus 175°C) must be evaluated against specific circuit requirements.

Q: Are the package dimensions identical between the FQB17P10TM and substitute parts?

A: All three devices use TO-263 family packaging (D2PAK or TO-263AA variants). These packages are mechanically and electrically compatible for PCB mounting. Pinout configuration is identical across all three parts.

Q: What is the impact of higher gate charge in the IRF5210STRLPBF?

A: The IRF5210STRLPBF has gate charge of 230 nC @ 10V compared to 39 nC @ 10V in the FQB17P10TM. Higher gate charge requires longer switching times and increased driver current capability. This affects circuit performance in high-frequency switching applications and may require driver circuit redesign.

Q: What is the impact of higher input capacitance in the substitute parts?

A: Both substitute parts have higher input capacitance (Ciss) than the original. The IRF5210STRLPBF has 2780 pF and IXTA18P10T has 2100 pF compared to 1100 pF in the FQB17P10TM. Higher input capacitance increases switching losses and may affect circuit performance in high-frequency applications.

Q: Are there compliance or regulatory differences between these parts?

A: The IRF5210STRLPBF and IXTA18P10T are both RoHS3 compliant and REACH unaffected. All three parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Moisture sensitivity level is 1 (Unlimited) for all parts.

Q: What is the significance of product status (Obsolete vs. Active)?

A: The FQB17P10TM is classified as Obsolete, indicating onsemi no longer manufactures or supports this device. The IRF5210STRLPBF and IXTA18P10T are both Active products, ensuring continued availability, technical support, and manufacturing consistency from their respective manufacturers.

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