FQB17P06TM MOSFET P-Channel 60V 17A Equivalent & Substitute Parts

Part Overview

The FQB17P06TM is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 17A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.

The FQB17P06TM operates across a temperature range of -55°C to 175°C (junction temperature) and is part of the QFET® series. With a maximum on-resistance of 120mOhm at 8.5A and 10V gate-source voltage, this P-Channel MOSFET is suitable for switching applications requiring moderate current handling and voltage blocking capability.

Substiute Parts

FQB17P06TM
onsemiIn Stock: 2159FQB17P06TM Datasheet
FQB17P06TM
Current Part
SPB18P06PGATMA1
Infineon TechnologiesIn Stock: 2771SPB18P06PGATMA1 Datasheet
SPB18P06PGATMA1
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 17 A
On-Resistance (Rds On Max) @ Id, Vgs 120 mOhm @ 8.5A, 10V mOhm
Gate-Source Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 250µA
Gate Charge (Qg Max) @ Vgs 27 nC @ 10V
Maximum Gate-Source Voltage (Vgs Max) ±25 V
Input Capacitance (Ciss Max) @ Vds 900 pF @ 25V
Power Dissipation (Max) 3.75 (Ta), 79 (Tc) W
Operating Temperature Range (TJ) -55 to 175 °C
Package Type TO-263-3 (D2PAK) Surface Mount
Moisture Sensitivity Level (MSL) 1 Unlimited

Substitute Part Grouping Explanation

Substitution of the FQB17P06TM is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain-to-Source Voltage (Vdss): 60V minimum
  • Continuous Drain Current (Id): 17A or greater at 25°C
  • Package Type: TO-263-3 (D2PAK) Surface Mount
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature Range: -55°C to 175°C or wider
  • Gate-Source Voltage Rating (Vgs Max): ±20V or greater

Secondary Compatibility Parameters:

  • On-Resistance (Rds On): Values within acceptable switching loss margins
  • Gate Charge (Qg): Values supporting equivalent drive circuit performance
  • Input Capacitance (Ciss): Values compatible with gate drive timing
  • Moisture Sensitivity Level: MSL 1 or equivalent

The SPB18P06PGATMA1 from Infineon Technologies meets all critical matching parameters and qualifies as a direct substitute for the obsolete FQB17P06TM.

Parameter Comparison

Parameter FQB17P06TM (onsemi) SPB18P06PGATMA1 (Infineon) Compatibility
Drain-to-Source Voltage (Vdss) 60 V 60 V Matched
Continuous Drain Current (Id) @ 25°C 17 A (Tc) 18.7 A (Ta) Substitute Exceeds
On-Resistance (Rds On Max) @ Id, Vgs 120 mOhm @ 8.5A, 10V 130 mOhm @ 13.2A, 10V Comparable
Gate-Source Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 250µA 4 V @ 1mA Matched
Gate Charge (Qg Max) @ Vgs 27 nC @ 10V 28 nC @ 10V Comparable
Maximum Gate-Source Voltage (Vgs Max) ±25 V ±20 V Substitute Reduced
Input Capacitance (Ciss Max) @ Vds 900 pF @ 25V 860 pF @ 25V Comparable
Power Dissipation (Max) 3.75 W (Ta), 79 W (Tc) 81.1 W (Ta) Substitute Exceeds
Operating Temperature Range (TJ) -55 to 175 °C -55 to 175 °C Matched
Package Type TO-263-3 (D2PAK) PG-TO263-3 (D2PAK) Matched
Mounting Type Surface Mount Surface Mount Matched
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Matched
REACH Status REACH Unaffected REACH Unaffected Matched

Engineering Selection Recommendations

Primary Substitute: SPB18P06PGATMA1 (Infineon Technologies)

The SPB18P06PGATMA1 is the qualified substitute for the obsolete FQB17P06TM based on the following engineering criteria:

Electrical Compatibility:

  • Identical 60V drain-to-source voltage rating ensures equivalent voltage blocking capability
  • Continuous drain current of 18.7A exceeds the original 17A specification, providing design margin
  • Gate-source threshold voltage of 4V matches the original device, ensuring compatible gate drive requirements
  • Gate charge of 28nC is within 4% of the original 27nC, maintaining equivalent switching speed characteristics
  • Input capacitance of 860pF is within acceptable tolerance of the original 900pF

Mechanical and Thermal Compatibility:

  • Identical TO-263-3 (D2PAK) package footprint ensures direct PCB compatibility without layout modification
  • Surface mount configuration matches the original mounting type
  • Operating temperature range of -55°C to 175°C is identical to the original device
  • Maximum power dissipation of 81.1W (Ta) exceeds the original 79W (Tc), providing thermal margin

Regulatory and Supply Chain Status:

  • SPB18P06PGATMA1 is classified as Active product status, ensuring long-term availability and supply continuity
  • ROHS3 compliance and REACH Unaffected status meet current regulatory requirements
  • Moisture Sensitivity Level 1 (Unlimited) matches the original device specification
  • ECCN EAR99 and HTSUS 8541.29.0095 classifications are identical

Design Consideration: The maximum gate-source voltage (Vgs Max) of the substitute is ±20V compared to the original ±25V. This reduction requires verification that gate drive circuits do not exceed ±20V during normal operation or fault conditions. In applications where gate drive voltage is limited to ±20V or less, this parameter difference presents no compatibility issue.

Frequently Asked Questions (FAQ)

Q: Can the SPB18P06PGATMA1 be used as a direct replacement for the FQB17P06TM without PCB modifications?

A: Yes. Both devices use the identical TO-263-3 (D2PAK) package with matching pin configuration and footprint. No PCB layout changes are required for mechanical or electrical substitution.

Q: What is the significance of the higher continuous drain current (18.7A vs. 17A) in the substitute part?

A: The higher current rating of the SPB18P06PGATMA1 provides design margin and thermal headroom. The device can handle the original 17A specification with reduced junction temperature rise, extending component lifetime and improving reliability.

Q: How do the on-resistance values compare between the two devices?

A: The FQB17P06TM specifies 120mOhm at 8.5A and 10V gate-source voltage. The SPB18P06PGATMA1 specifies 130mOhm at 13.2A and 10V gate-source voltage. The 10mOhm difference represents approximately 8% higher on-resistance in the substitute. This difference is within acceptable tolerance for most switching applications and results in proportionally higher conduction losses.

Q: Is the reduced maximum gate-source voltage (±20V vs. ±25V) a concern?

A: The reduced Vgs Max rating requires verification that gate drive circuits operate within ±20V limits. If the original design uses gate drive voltages exceeding ±20V, the substitute part is not suitable without gate drive circuit modification. For applications using standard ±15V or ±12V gate drive supplies, this parameter difference presents no compatibility issue.

Q: What is the impact of the 1% difference in gate charge (28nC vs. 27nC)?

A: The gate charge difference of 1nC is negligible and represents less than 4% variation. This minimal difference has no practical impact on gate drive circuit performance, switching speed, or timing characteristics.

Q: Are there any regulatory or compliance differences between the two parts?

A: Both devices are REACH Unaffected and carry identical ECCN EAR99 and HTSUS classifications. The SPB18P06PGATMA1 includes ROHS3 compliance certification, which exceeds the regulatory requirements of the obsolete FQB17P06TM. No compliance barriers exist for substitution.

Q: What is the availability status of each part?

A: The FQB17P06TM is classified as Obsolete with 2050 pieces in current inventory. The SPB18P06PGATMA1 is classified as Active with 2717 pieces in current inventory, ensuring long-term supply continuity and design support.

Q: Can the SPB18P06PGATMA1 be used in high-temperature applications?

A: Yes. Both devices support identical operating temperature ranges of -55°C to 175°C (junction temperature). The substitute part is fully qualified for high-temperature operation within this range.

Q: How do the input capacitance values affect circuit performance?

A: The input capacitance difference of 40pF (900pF vs. 860pF) represents approximately 4.4% variation. This minor difference has negligible impact on gate drive timing, switching frequency, or circuit stability in typical switching applications.

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