FQB12P20TM Equivalent & Substitute Parts

Part Overview

The FQB12P20TM is an active P-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 11.5A continuous drain current at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for applications requiring high-voltage switching and power management in compact form factors. The part is ROHS3 compliant and carries an unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across the same package type and functional category, enabling design flexibility and supply chain alternatives.

Substiute Parts

FQB12P20TM

onsemiIn Stock: 6864FQB12P20TM Datasheet

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IRF9640STRRPBF

Vishay SiliconixIn Stock: 2200IRF9640STRRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FQB12P20TM are identified based on strict electrical and mechanical compatibility criteria. The following parameters define the substitution scope:

Critical Matching Parameters:

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Mounting Type: Surface Mount
• Package / Case: TO-263 (D2PAK)
• Operating Temperature Range: -55°C ~ 150°C (TJ)

Allowable Variation Parameters:

• Current - Continuous Drain (Id) @ 25°C: Within or above 11.5A specification
• Rds On (Max): Within or below 470mOhm specification
• Gate Charge (Qg): Within or below 40 nC specification
• Vgs (Max): At or above ±30V specification
• Input Capacitance (Ciss): Within or below 1200 pF specification
• Power Dissipation: At or above 120W (Tc) specification

Substitute parts must maintain active product status and ROHS3 compliance to ensure long-term availability and regulatory alignment.

Parameter Comparison

Engineering Selection Recommendations

The IRF9640STRRPBF from Vishay Siliconix qualifies as a direct substitute for the FQB12P20TM based on the following criteria:

Electrical Compatibility: Both devices share identical drain-to-source voltage ratings (200V), matching package geometry (TO-263 D2PAK), and overlapping continuous drain current specifications (11A versus 11.5A). The IRF9640STRRPBF exhibits slightly higher on-resistance (500mOhm versus 470mOhm) and marginally higher gate charge (44nC versus 40nC), both within acceptable engineering tolerances for most switching applications. Input capacitance values are identical at 1200pF.

Thermal and Compliance Alignment: Both parts operate across the identical temperature range (-55°C to 150°C junction temperature) and maintain ROHS3 compliance with unlimited moisture sensitivity levels (MSL 1). Power dissipation ratings are comparable, with the IRF9640STRRPBF rated at 125W (Tc) versus 120W (Tc) for the FQB12P20TM.

Supply Chain Considerations: The FQB12P20TM maintains 6,816 pieces in current inventory, while the IRF9640STRRPBF has 2,100 pieces available. Both devices carry active product status, ensuring continued manufacturer support and long-term availability.

Gate Voltage Limitation: The IRF9640STRRPBF specifies a maximum gate-source voltage of ±20V compared to ±30V for the FQB12P20TM. Applications requiring gate voltages exceeding ±20V must retain the FQB12P20TM.

Frequently Asked Questions (FAQ)

Q: Can the IRF9640STRRPBF replace the FQB12P20TM in all applications?

A: The IRF9640STRRPBF is electrically and mechanically compatible for most applications. However, designs requiring gate-source voltages exceeding ±20V must use the FQB12P20TM, which supports ±30V maximum gate voltage.

Q: What is the significance of the slightly higher on-resistance in the IRF9640STRRPBF?

A: The IRF9640STRRPBF exhibits 500mOhm maximum on-resistance compared to 470mOhm for the FQB12P20TM. This 30mOhm difference results in marginally higher conduction losses. For applications with tight thermal budgets or high switching frequencies, verify that the 125W (Tc) power dissipation rating of the IRF9640STRRPBF remains adequate.

Q: Are the packages physically identical?

A: Both devices use the TO-263-3 (D2PAK) package with identical pin configurations and thermal tab geometry. Direct PCB footprint compatibility is confirmed.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both the FQB12P20TM and IRF9640STRRPBF are ROHS3 compliant, carry MSL 1 (unlimited moisture sensitivity), and are classified under ECCN EAR99 with identical HTSUS codes (8541.29.0095).

Q: What is the difference in gate charge between these devices?

A: The FQB12P20TM specifies 40nC maximum gate charge at 10V, while the IRF9640STRRPBF specifies 44nC. This 4nC difference has minimal impact on gate drive circuit design for most applications operating at standard switching frequencies.

Q: Which part should be selected for new designs?

A: Selection depends on application requirements. The FQB12P20TM offers lower on-resistance (470mOhm) and higher gate voltage tolerance (±30V). The IRF9640STRRPBF provides slightly higher power dissipation capability (125W versus 120W). Both are active products with confirmed long-term availability.