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FQB12N60CTM Equivalent & Substitute Parts
Part Overview
The FQB12N60CTM is an N-Channel 600V 12A MOSFET manufactured by onsemi in the QFET® series, housed in a TO-263 (D2PAK) surface mount package. This device is classified as Obsolete, indicating it is no longer in active production. The part delivers 225W power dissipation at case temperature (Tc) and operates across a temperature range of -55°C to 150°C. Due to its obsolete status, identifying equivalent and substitute parts is necessary for design continuity, production support, and long-term component availability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 600 | V |
| Continuous Drain Current (Id) @ 25°C | 12 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 650 | mOhm @ 6A, 10V |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 63 | nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2290 | pF @ 25V |
| Power Dissipation (Max) | 225 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | TO-263 (D2PAK) | Surface Mount |
| Moisture Sensitivity Level | 1 | Unlimited |
Substitute Part Grouping Explanation
Substitution of the FQB12N60CTM is determined by strict alignment of electrical and mechanical parameters. The critical substitution criteria are:
Primary Electrical Parameters:
- Drain to Source Voltage (Vdss): Must equal or exceed 600V
- Continuous Drain Current (Id): Must support 12A or higher at 25°C case temperature
- On-State Resistance (Rds On): Must not exceed 650mOhm at rated conditions to maintain thermal performance
- Gate Threshold Voltage (Vgs(th)): Must fall within acceptable switching range (4V nominal)
- Gate Charge (Qg): Lower values reduce switching losses; values up to 92nC are acceptable
- Input Capacitance (Ciss): Lower values improve switching speed; values up to 2290pF are acceptable
Mechanical Parameters:
- Package Type: TO-263 (D2PAK) or compatible surface mount packages
- Mounting Type: Surface mount only
- Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for reliability
Compliance Parameters:
- Operating Temperature Range: Must support -55°C to 150°C minimum
- REACH Status: REACH Unaffected preferred
- RoHS Compliance: ROHS3 Compliant preferred for new designs
Substitute parts are grouped into two categories: Direct Equivalents (matching all primary parameters within tolerance) and Functional Alternatives (meeting electrical requirements with different current ratings or package variants).
Parameter Comparison
| Parameter | FQB12N60CTM | STB10N60M2 | STB13NK60ZT4 | STB14NK60ZT4 | IXFA10N60P | FCD7N60TM | R6007ENJTL | STD7ANM60N |
|---|---|---|---|---|---|---|---|---|
| Vdss (V) | 600 | 600 | 600 | 600 | 600 | 600 | 600 | 600 |
| Id @ 25°C (A) | 12 | 7.5 | 13 | 13.5 | 10 | 7 | 7 | 5 |
| Rds On (mOhm) | 650 @ 6A | 600 @ 3A | 550 @ 4.5A | 500 @ 6A | 740 @ 5A | 600 @ 3.5A | 620 @ 2.4A | 900 @ 2.5A |
| Vgs(th) (V) | 4 @ 250µA | 4 @ 250µA | 4.5 @ 100µA | 4.5 @ 100µA | 5.5 @ 1mA | 5 @ 250µA | 4 @ 1mA | 4 @ 250µA |
| Qg (nC) | 63 @ 10V | 13.5 @ 10V | 92 @ 10V | 75 @ 10V | 32 @ 10V | 30 @ 10V | 20 @ 10V | 14 @ 10V |
| Ciss (pF) | 2290 @ 25V | 400 @ 100V | 2030 @ 25V | 2220 @ 25V | 1610 @ 25V | 920 @ 25V | 390 @ 25V | 363 @ 50V |
| Power Dissipation (W) | 225 (Tc) | 85 (Tc) | 150 (Tc) | 160 (Tc) | 200 (Tc) | 83 (Tc) | 40 (Tc) | 45 (Tc) |
| Tj Range (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | 150 | 150 |
| Package | TO-263 (D2PAK) | TO-263 (D2PAK) | D2PAK | D2PAK | TO-263AA (IXFA) | TO-252AA (DPAK) | LPTS | DPAK |
| Product Status | Obsolete | Active | Active | Active | Active | Not For New Designs | Active | Active |
| RoHS Status | Not Specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
For Direct Replacement (Highest Compatibility):
The STB14NK60ZT4 (STMicroelectronics) provides the closest functional match to the FQB12N60CTM. It delivers 13.5A continuous drain current, exceeding the 12A requirement, with a lower on-state resistance of 500mOhm at 6A (compared to 650mOhm). The part is housed in a D2PAK package, maintaining mechanical compatibility. The STB14NK60ZT4 is Active in product status, ROHS3 Compliant, and operates across the full -55°C to 150°C temperature range. Power dissipation of 160W (Tc) is lower than the original 225W, indicating improved thermal efficiency.
For Current-Limited Applications:
The STB13NK60ZT4 (STMicroelectronics) offers 13A continuous drain current with 550mOhm on-state resistance. This part is also Active, ROHS3 Compliant, and maintains full temperature range support. It provides a balanced alternative when the 13.5A capability of the STB14NK60ZT4 exceeds application requirements.
For Lower Current Designs:
The STB10N60M2 (STMicroelectronics) supports 7.5A continuous drain current with 600mOhm on-state resistance. This part is Active, ROHS3 Compliant, and housed in TO-263 (D2PAK) packaging. It is suitable for applications where the 12A rating of the original part is not fully utilized.
For Alternative Package Consideration:
The IXFA10N60P (IXYS) delivers 10A continuous drain current in a TO-263AA (IXFA) package, which is mechanically compatible with TO-263 (D2PAK). This part is Active and ROHS3 Compliant. The 740mOhm on-state resistance is higher than the original specification but remains within acceptable limits for many applications.
Parts Not Recommended for New Designs:
The FCD7N60TM (onsemi) is classified as "Not For New Designs" and should be avoided for new development projects, despite its Active inventory status.
Frequently Asked Questions (FAQ)
Q: Can the STB14NK60ZT4 directly replace the FQB12N60CTM without circuit modifications?
A: The STB14NK60ZT4 is mechanically and electrically compatible with the FQB12N60CTM. Both devices share the same 600V Vdss rating, operate across -55°C to 150°C, and use D2PAK packaging. The STB14NK60ZT4 exceeds the 12A current requirement at 13.5A and features lower on-state resistance (500mOhm vs. 650mOhm), resulting in improved thermal performance. No circuit modifications are required for direct substitution.
Q: Why does the STB14NK60ZT4 have lower power dissipation (160W) than the FQB12N60CTM (225W)?
A: Power dissipation ratings reflect the maximum thermal capability of the device in its package under specified conditions. The STB14NK60ZT4 exhibits lower on-state resistance and improved switching characteristics, resulting in reduced power loss during operation. The lower dissipation rating does not indicate reduced performance; it reflects more efficient device design.
Q: Is the IXFA10N60P suitable as a substitute despite its higher on-state resistance (740mOhm)?
A: The IXFA10N60P can function as a substitute in applications where the 10A current rating is sufficient. The higher on-state resistance (740mOhm vs. 650mOhm) will result in increased conduction losses. Thermal analysis of the specific application is required to confirm that the 200W power dissipation rating of the IXFA10N60P is adequate. This part is Active and ROHS3 Compliant, making it suitable for new designs.
Q: What is the significance of the different package designations (D2PAK, DPAK, LPTS)?
A: D2PAK and DPAK are both surface mount packages with two leads plus a tab for thermal connection. D2PAK (TO-263) is larger than DPAK (TO-252), providing better thermal performance. LPTS is a compact surface mount package. Mechanical compatibility depends on PCB layout and thermal requirements. D2PAK and DPAK packages are not directly interchangeable on the same PCB footprint without layout redesign.
Q: Why is the FCD7N60TM marked "Not For New Designs" despite having lower gate charge (30nC)?
A: Product status classifications reflect manufacturer support and long-term availability commitments. "Not For New Designs" indicates that while the part may still be available, the manufacturer does not recommend its use in new development projects. Active alternatives such as the STB series provide better long-term supply assurance and manufacturer support.
Q: Can the STD7ANM60N be used as a substitute for lower-current applications?
A: The STD7ANM60N supports only 5A continuous drain current, which is significantly below the 12A requirement of the FQB12N60CTM. This part is suitable only for applications where the current demand does not exceed 5A. The STD7ANM60N is AEC-Q101 qualified for automotive applications and operates at a maximum junction temperature of 150°C (no lower temperature limit specified).
Q: What does ROHS3 Compliance mean for component selection?
A: ROHS3 Compliance indicates that the device meets the Restriction of Hazardous Substances Directive, restricting the use of specific hazardous materials including lead, cadmium, and mercury. ROHS3 Compliant parts are required for applications subject to European Union regulations and are preferred for new designs. The FQB12N60CTM does not specify RoHS status, while all recommended substitutes are ROHS3 Compliant.
Q: How do gate charge differences affect circuit performance?
A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. Lower gate charge reduces switching losses and allows faster switching speeds. The FQB12N60CTM has 63nC gate charge, while substitutes range from 13.5nC (STB10N60M2) to 92nC (STB13NK60ZT4). Lower gate charge improves efficiency in high-frequency switching applications but does not affect DC performance.
Q: Are there thermal management differences between substitute parts?
A: Yes. The FQB12N60CTM is rated for 225W power dissipation at case temperature, while substitutes range from 40W to 200W. Higher power dissipation ratings indicate better thermal performance in the same package. The STB14NK60ZT4 (160W) and STB13NK60ZT4 (150W) provide adequate thermal capability for most applications. Thermal design must account for the specific power dissipation rating of the selected substitute and the application's heat dissipation requirements.
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