FQB11P06TM Equivalent & Substitute Parts

Part Overview

The FQB11P06TM is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 11.4A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute devices maintain compatibility through matching electrical specifications and identical package geometry while offering enhanced performance characteristics or improved availability.

Substiute Parts

FQB11P06TM

onsemiIn Stock: 22000FQB11P06TM Datasheet

Current PartRFQ

FQB27P06TM

onsemiIn Stock: 20273FQB27P06TM Datasheet

MFR RecommendedRFQ

IRF9Z34SPBF

Vishay SiliconixIn Stock: 1506IRF9Z34SPBF Datasheet

SimilarRFQ

IRF9Z34STRLPBF

Vishay SiliconixIn Stock: 2124IRF9Z34STRLPBF Datasheet

SimilarRFQ

IRF9Z34STRRPBF

Vishay SiliconixIn Stock: 2054IRF9Z34STRRPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQB11P06TM is determined by strict electrical and mechanical compatibility criteria. All substitute parts must satisfy the following requirements:

Mandatory Matching Parameters:

• FET Type: P-Channel
• Drain-to-Source Voltage (Vdss): 60V minimum
• Package: TO-263 (D2PAK) surface mount
• Operating Temperature Range: -55°C to 175°C minimum
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA maximum
• Maximum Gate Voltage (Vgs Max): ±20V or greater

Performance Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than 11.4A
• On-State Resistance (Rds On): Equal to or less than 175mOhm at rated conditions
• Gate Charge (Qg): Equal to or less than 17nC @ 10V
• Input Capacitance (Ciss): Equal to or less than 550pF @ 25V

Substitute parts are classified into two categories: manufacturer-recommended equivalents from onsemi's active product line, and similar cross-manufacturer alternatives from Vishay Siliconix that meet all electrical and mechanical requirements.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FQB27P06TM (onsemi)

The FQB27P06TM is the manufacturer-recommended equivalent from onsemi's active QFET® product line. This part maintains identical voltage and package specifications while providing superior electrical performance. The FQB27P06TM delivers 27A continuous drain current compared to the FQB11P06TM's 11.4A, with reduced on-state resistance of 70mOhm versus 175mOhm. Both devices share ROHS3 compliance, REACH Unaffected status, and MSL 1 rating. The FQB27P06TM is actively manufactured and stocked, eliminating obsolescence concerns. This substitute is suitable for direct replacement in applications where the higher current capability and improved thermal performance provide design margin.

Secondary Substitutes: IRF9Z34SPBF, IRF9Z34STRLPBF, IRF9Z34STRRPBF (Vishay Siliconix)

The Vishay Siliconix IRF9Z34 series devices (SPBF, STRLPBF, STRRPBF variants) provide functional equivalence with 18A continuous drain current and 140mOhm on-state resistance. These parts meet all mandatory electrical parameters and share identical TO-263 (D2PAK) package geometry. All three variants are actively produced with robust inventory availability. The primary distinction among these three is packaging format: IRF9Z34SPBF is supplied in Tube packaging, while IRF9Z34STRLPBF and IRF9Z34STRRPBF are supplied in Tape & Reel format. All three variants maintain ROHS3 compliance and MSL 1 rating. The maximum gate voltage specification for Vishay devices is ±20V, which is compatible with the FQB11P06TM's ±25V rating. These substitutes are suitable for applications requiring cross-manufacturer sourcing or where Vishay device availability is preferred.

Compliance Considerations:

All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols. The FQB27P06TM retains REACH Unaffected status matching the original part. Vishay IRF9Z34 variants carry REACH Affected designation, which may require additional documentation in regulated supply chains. All parts share EAR99 ECCN classification and identical HTSUS code 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the FQB27P06TM directly replace the FQB11P06TM in existing designs?

A: Yes. The FQB27P06TM is electrically and mechanically compatible with the FQB11P06TM. Both devices share identical 60V Vdss rating, TO-263 (D2PAK) package, gate threshold voltage specification, and operating temperature range. The FQB27P06TM's higher current rating (27A vs. 11.4A) and lower on-state resistance (70mOhm vs. 175mOhm) provide improved performance without requiring circuit modifications.

Q: What is the difference between IRF9Z34SPBF, IRF9Z34STRLPBF, and IRF9Z34STRRPBF?

A: These three variants are electrically identical P-Channel MOSFETs with 60V Vdss and 18A continuous drain current. The differences are packaging and delivery format only. IRF9Z34SPBF is supplied in Tube packaging, IRF9Z34STRLPBF is supplied in Tape & Reel format with one reel configuration, and IRF9Z34STRRPBF is supplied in Tape & Reel format with an alternative reel configuration. All three share identical electrical specifications and TO-263 (D2PAK) package geometry.

Q: Are there any gate voltage compatibility issues with Vishay IRF9Z34 substitutes?

A: No. The Vishay IRF9Z34 series specifies a maximum gate voltage of ±20V, while the FQB11P06TM specifies ±25V. The IRF9Z34 devices are fully compatible with gate drive circuits designed for the FQB11P06TM, as ±20V operation is within the FQB11P06TM's rated range.

Q: Why does the FQB27P06TM have higher gate charge than the FQB11P06TM?

A: Gate charge (Qg) increases with die size and current capability. The FQB27P06TM's 43nC gate charge at 10V reflects its higher 27A current rating compared to the FQB11P06TM's 11.4A rating. Higher gate charge requires proportionally longer switching times but does not affect functional compatibility in most applications.

Q: What is the significance of REACH Affected versus REACH Unaffected status?

A: REACH Affected status indicates that a part may contain substances of concern under European REACH regulations and requires additional documentation and compliance verification in certain supply chains. The FQB27P06TM maintains REACH Unaffected status, matching the original FQB11P06TM. Vishay IRF9Z34 variants carry REACH Affected designation. Selection between these options depends on supply chain requirements and regulatory obligations.

Q: Can I use the FQB27P06TM in applications with strict current limitations?

A: Yes. The FQB27P06TM is rated for 27A continuous drain current, which exceeds the FQB11P06TM's 11.4A rating. In applications where the circuit limits drain current to 11.4A or below, the FQB27P06TM operates within its rated specifications and provides additional design margin. The device's lower on-state resistance (70mOhm vs. 175mOhm) reduces power dissipation at equivalent current levels.

Q: Are all substitute parts available in the same packaging options?

A: No. The FQB27P06TM is available in Cut Tape (CT) and Digi-Reel® packaging. The Vishay IRF9Z34SPBF is supplied in Tube format, while IRF9Z34STRLPBF and IRF9Z34STRRPBF are supplied in Tape & Reel format. Packaging selection depends on production volume and assembly equipment compatibility. All variants maintain identical TO-263 (D2PAK) component geometry.

Q: What is the input capacitance difference between substitute parts?

A: The FQB11P06TM specifies 550pF maximum input capacitance at 25V. The FQB27P06TM specifies 1400pF, and the Vishay IRF9Z34 series specifies 1100pF. Higher input capacitance increases gate drive current requirements and switching losses. In applications with marginal gate drive capability, the lower capacitance of the original FQB11P06TM may be preferred, though all substitutes remain functionally compatible with standard gate drive circuits.