FQAF6N80 Equivalent & Substitute Parts

Part Overview

The FQAF6N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 4.4A continuous drain current at 25°C. Manufactured by onsemi as part of the QFET® series, this device is housed in a TO-3PF through-hole package and is rated for 90W maximum power dissipation. The product status is obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement needs.

Substiute Parts

FQAF6N80

onsemiIn Stock: 965FQAF6N80 Datasheet

Current PartRFQ

IXFR10N100Q

IXYSIn Stock: 1102IXFR10N100Q Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQAF6N80 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology required
• Technology: MOSFET (Metal Oxide) construction
• Drain to Source Voltage (Vdss): Minimum 800V rating
• Current - Continuous Drain (Id): Minimum 4.4A at 25°C
• Rds On (Max): Equal to or lower than 1.95 Ohm at specified conditions
• Vgs(th) (Max): Compatible gate threshold voltage
• Gate Charge (Qg): Lower or equivalent gate charge for switching performance
• Vgs (Max): Gate voltage rating of ±30V or higher
• Input Capacitance (Ciss): Acceptable input capacitance for circuit design
• Power Dissipation (Max): Minimum 90W rating
• Operating Temperature: -55°C to 150°C range

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package / Case: Compatible footprint and pin configuration

The IXFR10N100Q qualifies as a substitute based on superior electrical ratings across all critical parameters while maintaining through-hole mounting compatibility.

Parameter Comparison

Engineering Selection Recommendations

FQAF6N80 (Main Part - Obsolete)

The FQAF6N80 is classified as obsolete and no longer in active production. While 858 pieces are currently in stock, this part number should not be selected for new designs or long-term procurement strategies.

IXFR10N100Q (Active Substitute)

The IXFR10N100Q is an active product manufactured by IXYS and is recommended as the primary substitute for the FQAF6N80. This device provides superior electrical performance across all critical parameters:

• Higher Vdss rating (1000V vs. 800V) provides increased voltage margin
• Higher continuous drain current (9A vs. 4.4A) enables higher power handling
• Lower Rds On (1.2 Ohm vs. 1.95 Ohm) reduces conduction losses
• Higher power dissipation rating (250W vs. 90W) supports thermal requirements
• Identical operating temperature range (-55°C to 150°C)
• Through-hole mounting maintained for PCB compatibility
• RoHS3 Compliant status ensures regulatory compliance
• REACH Unaffected status confirms environmental compliance

Package Consideration:

The IXFR10N100Q uses a TO-247-3 package, which differs from the FQAF6N80 TO-3P-3 package. PCB layout modifications are required to accommodate the different pin configuration and footprint. Both packages are through-hole mounted and widely supported in manufacturing environments.

Frequently Asked Questions (FAQ)

Q: Can the IXFR10N100Q directly replace the FQAF6N80 without circuit modifications?

A: The IXFR10N100Q is electrically compatible as a substitute, but PCB layout changes are required due to different package types (TO-247-3 vs. TO-3P-3). Pin assignments and spacing differ between these packages. Circuit operation remains compatible when proper PCB footprint adaptation is implemented.

Q: What are the key electrical advantages of the IXFR10N100Q over the FQAF6N80?

A: The IXFR10N100Q provides higher Vdss (1000V vs. 800V), higher continuous drain current (9A vs. 4.4A), lower on-resistance (1.2 Ohm vs. 1.95 Ohm), and higher power dissipation capability (250W vs. 90W). These parameters enable the substitute to handle higher voltage and current levels with reduced conduction losses.

Q: Are there thermal management differences between these devices?

A: The IXFR10N100Q has a higher power dissipation rating (250W vs. 90W), which may reduce thermal management requirements in applications. Both devices operate across the same temperature range (-55°C to 150°C). Actual thermal performance depends on circuit design, heatsinking, and operating conditions.

Q: What is the impact of higher gate charge in the IXFR10N100Q?

A: The IXFR10N100Q has higher gate charge (90 nC vs. 31 nC), which increases the energy required to switch the device. This results in slightly longer switching times and higher gate drive power consumption. Gate drive circuits must supply adequate current to meet switching frequency requirements.

Q: Is the IXFR10N100Q suitable for high-frequency switching applications?

A: The higher gate charge and input capacitance of the IXFR10N100Q may impact switching frequency performance compared to the FQAF6N80. Circuit design and gate drive capability determine maximum practical switching frequency. Applications requiring very high switching frequencies should evaluate gate drive requirements.

Q: What compliance certifications apply to the IXFR10N100Q?

A: The IXFR10N100Q is RoHS3 Compliant and REACH Unaffected. Both certifications match the environmental and regulatory requirements of the FQAF6N80, ensuring compatibility with modern manufacturing and environmental standards.

Q: Are there inventory considerations for the IXFR10N100Q?

A: The IXFR10N100Q is an active product with 1032 pieces currently in stock, providing reliable long-term availability. The FQAF6N80 is obsolete with limited remaining inventory (858 pieces), making the IXFR10N100Q the preferred choice for ongoing production and new designs.