FQAF16N50 N-Channel MOSFET 500V 11.3A Equivalent & Substitute Parts

Part Overview

The FQAF16N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 11.3A continuous drain current at 25°C. This device is packaged in a TO-3PF through-hole configuration and is part of the QFET® series. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing system support, maintenance, and design continuity. Substitute parts must maintain functional compatibility within the specified electrical and thermal parameters while accommodating available packaging options.

Substiute Parts

FQAF16N50

onsemiIn Stock: 1509FQAF16N50 Datasheet

Current PartRFQ

NTPF250N65S3H

onsemiIn Stock: 1630NTPF250N65S3H Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQAF16N50 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 500V
• Continuous Drain Current (Id): Substitute must support minimum 11.3A at 25°C
• On-State Resistance (Rds On): Substitute must not exceed 320 mOhm at rated conditions
• Power Dissipation: Substitute must support thermal requirements of the application
• Operating Temperature Range: Substitute must cover -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Through-hole configuration required
• Package compatibility: Substitutes may use alternative through-hole packages (TO-220FP, TO-3PF) provided pin configuration and thermal characteristics are suitable

Compliance Criteria:

• RoHS3 compliance required
• REACH unaffected status required

The identified substitute NTPF250N65S3H meets these criteria with elevated voltage rating (650V), comparable current rating (13A), and improved on-state resistance (250 mOhm), while maintaining through-hole mounting and full compliance status.

Parameter Comparison

Engineering Selection Recommendations

NTPF250N65S3H as Substitute for FQAF16N50:

The NTPF250N65S3H is a direct functional substitute for the obsolete FQAF16N50. Both devices are manufactured by onsemi and maintain full ROHS3 compliance and REACH unaffected status.

Electrical Advantages:

• Higher Vdss rating (650V vs. 500V) provides additional voltage margin in applications
• Comparable continuous drain current (13A vs. 11.3A) exceeds minimum requirements
• Superior on-state resistance (250 mOhm vs. 320 mOhm) reduces conduction losses
• Lower gate charge (24 nC vs. 75 nC) improves switching performance

Thermal Considerations:

• The NTPF250N65S3H has lower maximum power dissipation (29W vs. 110W at Tc), reflecting its TO-220FP package design versus the TO-3PF package of the original part
• Both devices support the full operating temperature range (-55°C to 150°C TJ)
• Thermal management design must account for the different package thermal characteristics

Product Status:

• FQAF16N50: Obsolete
• NTPF250N65S3H: Not For New Designs

Both parts are available in current inventory. The NTPF250N65S3H represents the current-generation equivalent within onsemi's product portfolio for this voltage and current class.

Frequently Asked Questions (FAQ)

Q: Can the NTPF250N65S3H directly replace the FQAF16N50 in existing designs?

A: The NTPF250N65S3H is electrically compatible as a substitute. However, the package change from TO-3PF to TO-220FP requires PCB layout modification. Pin configuration differs between packages, and thermal management design must be re-evaluated for the TO-220FP package characteristics.

Q: What is the significance of the higher Vdss rating (650V vs. 500V) on the substitute part?

A: The elevated Vdss rating on the NTPF250N65S3H provides additional voltage headroom and safety margin in applications operating at or near 500V. This does not negatively impact performance in 500V-rated circuits and may improve reliability in transient overvoltage conditions.

Q: How does the lower gate charge (24 nC vs. 75 nC) affect circuit performance?

A: Lower gate charge reduces the energy required to switch the device and decreases switching time. This results in lower switching losses and improved efficiency, particularly in high-frequency switching applications. Gate drive circuits may require adjustment to optimize switching performance.

Q: Are there thermal management differences between the TO-3PF and TO-220FP packages?

A: Yes. The TO-3PF package (original) has higher power dissipation capability (110W) compared to the TO-220FP package (29W). Thermal design must account for these differences. The TO-220FP typically requires a heatsink for equivalent thermal performance in high-power applications.

Q: Do both parts meet current compliance requirements?

A: Both the FQAF16N50 and NTPF250N65S3H are ROHS3 compliant and REACH unaffected. Both are suitable for applications with these compliance requirements.

Q: What is the difference in product status between these parts?

A: The FQAF16N50 is classified as obsolete, indicating it is no longer manufactured. The NTPF250N65S3H is classified as "Not For New Designs," indicating it is available but not recommended for new product development. For new designs, consult onsemi's current product portfolio for the latest generation equivalent.