FQAF13N80 Equivalent & Substitute Parts

Part Overview

The FQAF13N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 8A continuous drain current, manufactured by onsemi in the QFET® series. This device is packaged in a TO-3PF through-hole configuration and is rated for 120W maximum power dissipation. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	8	A
Rds On (Max) @ Id, Vgs	750	mOhm @ 4A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	88	nC @ 10V
Input Capacitance (Ciss) @ Vds	3500	pF @ 25V
Power Dissipation (Max)	120	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-3PF	—

Substitute Part Grouping Explanation

Substitution of the FQAF13N80 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 800V
Continuous Drain Current (Id) must be equal to or greater than 8A
Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
Maximum Gate Voltage (Vgs Max) must accommodate ±30V operation
Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Criteria:

Mounting type must be through-hole
Package must be physically compatible with TO-3PF footprint or equivalent through-hole configuration

The substitute parts identified meet these criteria while maintaining N-Channel MOSFET technology and ROHS3 compliance. Substitutes may exceed the original specifications in voltage rating, current capacity, or power dissipation without compromising circuit functionality.

Parameter Comparison

Parameter	FQAF13N80 (onsemi)	STW10NK80Z (STMicroelectronics)	IXFR21N100Q (IXYS)
Drain to Source Voltage (Vdss)	800V	800V	1000V
Continuous Drain Current (Id) @ 25°C	8A	9A	18A
Rds On (Max) @ Id, Vgs	750mOhm @ 4A, 10V	900mOhm @ 4.5A, 10V	500mOhm @ 10.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5V @ 250µA	4.5V @ 100µA	5V @ 4mA
Gate Charge (Qg) @ Vgs	88nC @ 10V	72nC @ 10V	170nC @ 10V
Input Capacitance (Ciss) @ Vds	3500pF @ 25V	2180pF @ 25V	5900pF @ 25V
Power Dissipation (Max)	120W	160W	350W
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C
Mounting Type	Through Hole	Through Hole	Through Hole
Package	TO-3PF	TO-247-3	ISOPLUS247™
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

STW10NK80Z (STMicroelectronics)

The STW10NK80Z is the primary substitute for the FQAF13N80. Both devices share identical 800V Vdss rating and comparable 8A to 9A continuous drain current specifications. The STW10NK80Z is currently in active production status, ensuring long-term availability and supply chain stability. This device is ROHS3 compliant and REACH unaffected, meeting all regulatory requirements. The TO-247-3 package provides superior thermal performance compared to the TO-3PF, with 160W maximum power dissipation versus 120W. Gate charge is lower at 72nC, reducing driver requirements. This substitute is suitable for direct replacement in applications where package footprint modification is acceptable.

IXFR21N100Q (IXYS)

The IXFR21N100Q provides an alternative substitute with enhanced electrical performance. This device exceeds the FQAF13N80 specifications with 1000V Vdss rating, 18A continuous drain current, and 350W power dissipation. The IXFR21N100Q is actively produced and ROHS3 compliant. The higher voltage rating provides additional design margin for transient overvoltage conditions. The ISOPLUS247™ package offers improved thermal characteristics. This substitute is appropriate for applications requiring higher current capacity or enhanced thermal management. Gate charge of 170nC requires verification of driver capability in the target circuit.

Both substitutes maintain N-Channel MOSFET technology, through-hole mounting, and compatible operating temperature ranges (-55°C to 150°C). Selection between these substitutes depends on specific application requirements regarding package compatibility, thermal dissipation needs, and current capacity.

Frequently Asked Questions (FAQ)

Q: Can the STW10NK80Z directly replace the FQAF13N80 without circuit modification?

A: The STW10NK80Z meets all electrical specifications for substitution. However, the package differs (TO-247-3 versus TO-3PF). PCB layout modification is required to accommodate the different pin configuration and footprint. Electrical functionality remains compatible.

Q: What is the primary advantage of the IXFR21N100Q over the STW10NK80Z?

A: The IXFR21N100Q provides higher voltage rating (1000V versus 800V), higher continuous current (18A versus 9A), and significantly higher power dissipation capability (350W versus 160W). These enhancements provide additional design margin and thermal performance. The trade-off is higher gate charge (170nC versus 72nC), requiring verification of gate driver capability.

Q: Are both substitute parts ROHS3 compliant?

A: Yes. Both the STW10NK80Z and IXFR21N100Q are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic components.

Q: Why is the FQAF13N80 classified as obsolete?

A: The FQAF13N80 is no longer in active production by onsemi. The substitute parts listed represent currently available alternatives that meet or exceed the original specifications.

Q: Does gate charge difference affect circuit performance?

A: Gate charge influences gate driver design and switching speed. The STW10NK80Z has lower gate charge (72nC) compared to the FQAF13N80 (88nC), potentially improving switching performance. The IXFR21N100Q has higher gate charge (170nC), requiring verification that the existing gate driver can supply sufficient current for the specified switching frequency.

Q: Can I use the IXFR21N100Q in a circuit designed for 800V operation?

A: Yes. The IXFR21N100Q is rated for 1000V Vdss, which exceeds the 800V requirement. Operating at 800V is within the device's safe operating area. The higher voltage rating provides additional margin without compromising functionality.

Q: What thermal considerations apply when substituting these parts?

A: The STW10NK80Z and IXFR21N100Q have higher power dissipation ratings (160W and 350W respectively) compared to the FQAF13N80 (120W). Both substitute parts feature improved thermal performance through their respective package designs. Verify that existing thermal management (heatsinking, thermal interface materials) is adequate for the selected substitute.

Q: Are there package compatibility issues between the three devices?

A: Yes. The FQAF13N80 uses TO-3PF packaging, while the STW10NK80Z uses TO-247-3 and the IXFR21N100Q uses ISOPLUS247™. All are through-hole packages but have different pin configurations and footprints. PCB layout modification is required for substitution.

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