FPNH10 RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The FPNH10 is an RF transistor NPN manufactured by onsemi, designed for RF applications operating at 650MHz with a maximum collector-emitter breakdown voltage of 25V and maximum power dissipation of 350mW. The device is packaged in a through-hole TO-92-3 configuration and is classified as obsolete. Due to its obsolete status, equivalent substitute parts are necessary for new designs and ongoing production requirements. Substitute parts must maintain functional compatibility while accommodating modern packaging and manufacturing standards.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	-
Voltage - Collector Emitter Breakdown (Max)	25V	V
Frequency - Transition	650MHz	MHz
Power - Max	350mW	mW
Current - Collector (Ic) (Max)	50mA	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V	-
Operating Temperature	-55°C ~ 150°C	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-92-3	-

Substitute Part Grouping Explanation

Substitution of the FPNH10 is determined by the following critical parameters: transistor type (NPN), maximum collector-emitter breakdown voltage, frequency capability, maximum power dissipation, maximum collector current, and DC current gain characteristics. The substitute parts listed are grouped based on their ability to operate within or exceed the electrical specifications of the original FPNH10 while accommodating different mounting technologies and package configurations.

The primary substitution criteria are:

Transistor Type: NPN configuration required
Voltage Rating: Minimum 25V collector-emitter breakdown voltage
Frequency: Minimum 650MHz transition frequency
Power Dissipation: Minimum 350mW capability
Collector Current: Minimum 50mA capability
DC Current Gain: Minimum hFE of 60

Substitute parts may exceed these specifications and employ surface-mount or alternative through-hole packaging. All substitute parts listed maintain NPN configuration and meet or exceed the electrical performance envelope of the FPNH10.

Parameter Comparison

Parameter	FPNH10	BFP182RE7764HTSA1	BFP420H6433XTMA1	BFP650FH6327XTSA1	BFP740ESDH6327XTSA1	BFP740FH6327XTSA1	BFR193WH6327XTSA1	BFR360FH6765XTSA1	MAPRST0912-350
Manufacturer	onsemi	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	MACOM
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	25V	12V	5V	4.5V	4.7V	4.7V	12V	9V	65V
Frequency - Transition	650MHz	8GHz	25GHz	42GHz	45GHz	42GHz	8GHz	14GHz	1.215GHz
Power - Max	350mW	250mW	160mW	500mW	160mW	160mW	580mW	210mW	350W
Current - Collector (Ic) (Max)	50mA	35mA	35mA	150mA	45mA	30mA	80mA	35mA	32.5A
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V	70 @ 10mA, 8V	60 @ 20mA, 4V	110 @ 80mA, 3V	160 @ 25mA, 3V	160 @ 25mA, 3V	70 @ 30mA, 8V	90 @ 15mA, 3V	-
Operating Temperature	-55°C ~ 150°C	150°C	150°C	150°C	150°C	150°C	150°C	150°C	200°C
Mounting Type	Through Hole	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Chassis Mount
Package / Case	TO-92-3	SOT-143R	SOT-343	4-TSFP	SOT-343	4-TSFP	SOT-323	SOT-723	-
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active
RoHS Status	-	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

The FPNH10 is classified as obsolete, necessitating substitution for new designs and production continuity. All listed substitute parts are active products with current manufacturing support and RoHS3 compliance, ensuring long-term availability and regulatory alignment.

For applications requiring voltage compatibility near the original 25V specification:

The MAPRST0912-350 manufactured by MACOM provides the highest collector-emitter breakdown voltage at 65V, exceeding the FPNH10 specification. This part operates at 1.215GHz, which is within the frequency envelope of the original device. The MAPRST0912-350 delivers 350W maximum power dissipation, matching the FPNH10 power rating, and supports 32.5A collector current. This part is suitable for high-power RF applications and is available in chassis mount configuration.

For applications requiring moderate voltage and frequency performance:

The BFR193WH6327XTSA1 and BFP182RE7764HTSA1, both manufactured by Infineon, operate at 12V collector-emitter breakdown voltage. The BFR193WH6327XTSA1 provides 8GHz frequency capability with 580mW power dissipation and 80mA maximum collector current in SOT-323 surface-mount packaging. The BFP182RE7764HTSA1 operates at 8GHz with 250mW power dissipation and 35mA maximum collector current in SOT-143R surface-mount packaging.

For applications requiring higher frequency performance:

The BFR360FH6765XTSA1 operates at 14GHz with 9V collector-emitter breakdown voltage, 210mW power dissipation, and 35mA maximum collector current in SOT-723 surface-mount packaging. The BFP740ESDH6327XTSA1 and BFP740FH6327XTSA1 provide 45GHz and 42GHz frequency capability respectively, with 4.7V collector-emitter breakdown voltage and 160mW power dissipation in SOT-343 and 4-TSFP surface-mount packages.

For applications requiring ultra-high frequency performance:

The BFP420H6433XTMA1 and BFP650FH6327XTSA1 operate at 25GHz and 42GHz respectively. The BFP650FH6327XTSA1 provides the highest power dissipation among high-frequency options at 500mW with 150mA maximum collector current in 4-TSFP surface-mount packaging.

All substitute parts maintain NPN transistor configuration and are REACH Unaffected with EAR99 export classification, matching the regulatory status of the original FPNH10.

Frequently Asked Questions (FAQ)

Q: Can the FPNH10 be directly replaced with any of the listed substitute parts?

A: Direct replacement depends on circuit requirements. All substitute parts are NPN transistors meeting or exceeding the electrical specifications of the FPNH10. However, mounting type differs significantly: the FPNH10 uses through-hole TO-92-3 packaging, while most substitutes employ surface-mount configurations (SOT-323, SOT-343, SOT-143R, 4-TSFP, SOT-723) or chassis mount (MAPRST0912-350). PCB layout and assembly process modifications are required when transitioning from through-hole to surface-mount packages.

Q: Which substitute part most closely matches the FPNH10 electrical specifications?

A: The MAPRST0912-350 provides the closest match in terms of power dissipation (350mW vs. 350W maximum) and collector-emitter breakdown voltage (65V exceeds 25V). However, this part is designed for high-power applications with 32.5A collector current and chassis mount configuration. For lower-power RF applications, the BFR193WH6327XTSA1 at 12V and 580mW power dissipation provides good electrical compatibility with modern surface-mount packaging.

Q: What are the key differences between the substitute parts?

A: Substitute parts vary significantly in frequency capability (1.215GHz to 45GHz), collector-emitter breakdown voltage (4.5V to 65V), power dissipation (160mW to 350W), and collector current rating (30mA to 32.5A). Selection depends on specific application requirements for operating frequency, voltage headroom, power handling, and current capacity. All parts maintain NPN configuration and operate across the -55°C to 150°C temperature range or higher.

Q: Are all substitute parts RoHS compliant?

A: All listed substitute parts are ROHS3 Compliant. The original FPNH10 does not specify RoHS status. All substitute parts are REACH Unaffected and classified as EAR99 for export purposes, matching the regulatory classification of the original device.

Q: What packaging considerations apply when selecting a substitute?

A: The FPNH10 uses through-hole TO-92-3 packaging suitable for manual assembly and breadboarding. Substitute parts employ surface-mount packages (SOT-323, SOT-343, SOT-143R, 4-TSFP, SOT-723) requiring automated assembly equipment and modified PCB layouts. The MAPRST0912-350 uses chassis mount configuration for high-power applications. Package selection must align with manufacturing capabilities and PCB design constraints.

Q: Can substitute parts with lower voltage ratings be used in circuits designed for 25V operation?

A: Substitute parts with lower collector-emitter breakdown voltages (such as BFP420H6433XTMA1 at 5V or BFP650FH6327XTSA1 at 4.5V) are not suitable for circuits operating at 25V. The MAPRST0912-350 at 65V and BFR193WH6327XTSA1 or BFP182RE7764HTSA1 at 12V provide adequate voltage headroom for reduced-voltage applications. Circuit voltage requirements must be verified before part selection.

Q: What is the inventory status of substitute parts?

A: All substitute parts are listed as active products with current inventory availability. BFP650FH6327XTSA1 has the highest inventory at 18,613 pieces. MAPRST0912-350 has 748 pieces available. Inventory levels support production requirements for new designs and ongoing manufacturing.

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