FPF2G120BF07ASP IGBT Module Equivalent & Substitute Parts

Part Overview

The FPF2G120BF07ASP is an IGBT Module manufactured by onsemi, classified as a Field Stop Insulated Gate Bipolar Transistor with 3 independent configurations. This component is rated for 650 V collector-emitter breakdown voltage and 40 A maximum collector current, delivering 156 W maximum power dissipation. The device features a through-hole F2 package mounting type and includes an integrated NTC thermistor for thermal monitoring.

The FPF2G120BF07ASP is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this IGBT module specification.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	650	V
Current - Collector (Ic) (Max)	40	A
Power - Max	156	W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A	V
Current - Collector Cutoff (Max)	250	µA
Operating Temperature Range	-40 to 150	°C (TJ)
IGBT Type	Field Stop	—
Configuration	3 Independent	—
Mounting Type	Through Hole	—
Package / Case	Module	—
Supplier Device Package	F2	—
Input Type	Standard	—
NTC Thermistor	Yes	—

Substitute Part Grouping Explanation

Substitution of the FPF2G120BF07ASP is determined by strict equivalence across all critical electrical and mechanical parameters. The following parameters must match identically for a part to function as a direct substitute:

Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Power - Max: 156 W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Current - Collector Cutoff (Max): 250 µA
IGBT Type: Field Stop
Configuration: 3 Independent
Mounting Type: Through Hole
Package / Case: Module
Supplier Device Package: F2
Input Type: Standard
NTC Thermistor: Yes
Operating Temperature Range: -40°C to 150°C (TJ)

The FPF2G120BF07AS meets all these criteria and is classified as a parametric equivalent substitute for the obsolete FPF2G120BF07ASP.

Parameter Comparison

Parameter	FPF2G120BF07ASP (onsemi)	FPF2G120BF07AS (Fairchild Semiconductor)	Match
Voltage - Collector Emitter Breakdown (Max)	650 V	650 V	✓
Current - Collector (Ic) (Max)	40 A	40 A	✓
Power - Max	156 W	156 W	✓
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A	2.2V @ 15V, 40A	✓
Current - Collector Cutoff (Max)	250 µA	250 µA	✓
IGBT Type	Field Stop	Field Stop	✓
Configuration	3 Independent	3 Independent	✓
Operating Temperature Range	-40°C to 150°C (TJ)	-40°C to 150°C (TJ)	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	Module	Module	✓
Supplier Device Package	F2	F2	✓
Input Type	Standard	Standard	✓
NTC Thermistor	Yes	Yes	✓
Manufacturer	onsemi	Fairchild Semiconductor	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The FPF2G120BF07AS manufactured by Fairchild Semiconductor is a direct parametric equivalent to the obsolete FPF2G120BF07ASP. All electrical specifications, thermal characteristics, and mechanical parameters are identical. The substitute part is currently in active production status, ensuring supply chain availability and long-term procurement viability.

The FPF2G120BF07AS is RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards. The part maintains the same F2 through-hole module package configuration, enabling direct mechanical and electrical integration into existing PCB designs without layout modifications.

Selection of the FPF2G120BF07AS as a replacement for the obsolete FPF2G120BF07ASP is supported by complete parametric equivalence and active product status. No design modifications or circuit re-qualification are required when transitioning between these two part numbers.

Frequently Asked Questions (FAQ)

Q: Can the FPF2G120BF07AS be used as a direct replacement for the FPF2G120BF07ASP?

A: Yes. The FPF2G120BF07AS is a parametric equivalent substitute. All electrical ratings, thermal specifications, and mechanical dimensions are identical. The parts are pin-compatible and functionally interchangeable.

Q: What is the primary reason for substitution?

A: The FPF2G120BF07ASP is obsolete. The FPF2G120BF07AS is an active product from Fairchild Semiconductor with identical specifications, ensuring continued availability and supply chain support.

Q: Are there any differences in package configuration between these parts?

A: No. Both parts use the F2 through-hole module package. Mechanical mounting and PCB footprint requirements are identical.

Q: Do both parts include the NTC thermistor?

A: Yes. Both the FPF2G120BF07ASP and FPF2G120BF07AS include integrated NTC thermistor functionality for thermal monitoring.

Q: What is the operating temperature range for the substitute part?

A: The FPF2G120BF07AS operates across -40°C to 150°C junction temperature (TJ), matching the original part specification.

Q: Are there any compliance or certification differences?

A: Both parts meet RoHS3 compliance and REACH requirements. The substitute part maintains all environmental and regulatory certifications of the original component.

Q: What are the maximum electrical ratings for this IGBT module?

A: The FPF2G120BF07AS is rated for 650 V collector-emitter breakdown voltage, 40 A maximum collector current, and 156 W maximum power dissipation with Vce(on) of 2.2V at 15V gate voltage and 40A collector current.

Q: Is the 3 Independent configuration maintained in the substitute part?

A: Yes. The FPF2G120BF07AS retains the 3 Independent IGBT configuration of the original part.

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