FPF2G120BF07AS IGBT Module Equivalent & Substitute Parts

Part Overview

The FPF2G120BF07AS is an IGBT Module manufactured by onsemi, classified as a Field Stop Insulated Gate Bipolar Transistor with 3 independent configurations. This component is rated for 650 V collector-emitter breakdown voltage and 40 A maximum collector current, delivering 156 W maximum power dissipation. The device features a through-hole F2 package mounting type and includes an integrated NTC thermistor for thermal monitoring.

The FPF2G120BF07AS is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this IGBT module specification.

Substiute Parts

FPF2G120BF07AS

onsemiIn Stock: 1204FPF2G120BF07AS Datasheet

Current PartRFQ

FPF2G120BF07AS

Fairchild SemiconductorIn Stock: 1878FPF2G120BF07AS Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FPF2G120BF07AS is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Parameters:

• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 40 A
• Power - Max: 156 W
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
• Current - Collector Cutoff (Max): 250 µA

Structural Parameters:

• IGBT Type: Field Stop
• Configuration: 3 Independent
• Input Type: Standard
• NTC Thermistor: Present
• Operating Temperature Range: -40°C to 150°C (TJ)

Physical Parameters:

• Mounting Type: Through Hole
• Package / Case: Module
• Supplier Device Package: F2

Substitute parts must match all listed parameters without deviation. Parts are grouped as parametric equivalents when they satisfy these criteria across all electrical, structural, and physical specifications.

Parameter Comparison

Engineering Selection Recommendations

The FPF2G120BF07AS manufactured by Fairchild Semiconductor is a parametric equivalent substitute for the obsolete onsemi FPF2G120BF07AS. Both parts share identical part numbers and match across all critical electrical, structural, and physical parameters.

Product Status Consideration: The onsemi version is classified as obsolete, while the Fairchild Semiconductor version maintains active product status. Selection of the Fairchild Semiconductor variant ensures continued availability and supply chain support for new production and replacement applications.

Compliance and Certification: Both variants comply with ROHS3 standards and carry EAR99 ECCN classification. The Fairchild Semiconductor version is REACH Unaffected. Inventory availability differs between manufacturers, with Fairchild Semiconductor reporting 1823 pieces in stock compared to onsemi's 1106 pieces.

Application Compatibility: The electrical and mechanical specifications are identical between both variants. Direct substitution is supported for all applications originally designed for the onsemi FPF2G120BF07AS without circuit modification or thermal redesign.

Frequently Asked Questions (FAQ)

Q: Can the Fairchild Semiconductor FPF2G120BF07AS directly replace the onsemi FPF2G120BF07AS?

A: Yes. Both parts carry identical part numbers and match across all electrical parameters (650 V breakdown voltage, 40 A collector current, 156 W power rating, 2.2V Vce(on)), structural specifications (Field Stop IGBT, 3 independent configuration, standard input, integrated NTC thermistor), and physical characteristics (through-hole F2 package, module case). Direct substitution is supported without circuit modification.

Q: Why is the onsemi version listed as obsolete?

A: The onsemi FPF2G120BF07AS is classified as obsolete in the current product lifecycle. The Fairchild Semiconductor variant maintains active status and provides continued supply availability for applications requiring this IGBT module specification.

Q: Are there differences in thermal performance between the two variants?

A: Both variants operate across the identical temperature range of -40°C to 150°C (TJ) and share the same maximum power dissipation rating of 156 W. Both include integrated NTC thermistors for thermal monitoring. No thermal performance differences exist between the variants.

Q: What is the significance of the F2 package designation?

A: The F2 package designation identifies the specific through-hole module form factor used by both variants. This standardized package ensures mechanical and electrical compatibility across both manufacturers' implementations. The F2 package is a module-level package type suitable for through-hole mounting applications.

Q: Are there compliance or certification differences between the variants?

A: Both variants comply with ROHS3 standards and carry EAR99 ECCN classification. The Fairchild Semiconductor version is designated as REACH Unaffected. Both variants carry Moisture Sensitivity Level (MSL) 1 (Unlimited). No compliance barriers exist for substitution.

Q: What is the base product number relationship?

A: Both variants share the base product number FPF2G120. The full part number FPF2G120BF07AS includes the suffix designating the specific configuration (3 independent Field Stop IGBT at 650 V, 40 A). The base product number indicates the core IGBT module family.