FMMTH10TC RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The FMMTH10TC is an RF transistor NPN manufactured by Diodes Incorporated, designed for RF applications operating at 650MHz with a maximum collector-emitter breakdown voltage of 25V and power dissipation of 330mW in a surface mount SOT-23-3 package. The device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. This reference provides direct substitutes and functional equivalents based on electrical and mechanical compatibility parameters.

Substiute Parts

FMMTH10TC
Diodes IncorporatedIn Stock: 998FMMTH10TC Datasheet
FMMTH10TC
Current Part
BFP405FH6327XTSA1
Infineon TechnologiesIn Stock: 3962BFP405FH6327XTSA1 Datasheet
BFP405FH6327XTSA1
MFR Recommended
BFP620FH7764XTSA1
Infineon TechnologiesIn Stock: 5428BFP620FH7764XTSA1 Datasheet
BFP620FH7764XTSA1
MFR Recommended
BFP720ESDH6327XTSA1
Infineon TechnologiesIn Stock: 4304BFP720ESDH6327XTSA1 Datasheet
BFP720ESDH6327XTSA1
MFR Recommended
BFU690F,115
NXP USA Inc.In Stock: 36429BFU690F,115 Datasheet
BFU690F,115
MFR Recommended
KST10MTF
onsemiIn Stock: 391133KST10MTF Datasheet
KST10MTF
MFR Recommended
MMBT5179
onsemiIn Stock: 2460MMBT5179 Datasheet
MMBT5179
MFR Recommended
MMBTH10-4LT1G
onsemiIn Stock: 18418MMBTH10-4LT1G Datasheet
MMBTH10-4LT1G
MFR Recommended
MMBTH10LT1G
onsemiIn Stock: 62479MMBTH10LT1G Datasheet
MMBTH10LT1G
MFR Recommended
MMBTH10LT3G
onsemiIn Stock: 1163MMBTH10LT3G Datasheet
MMBTH10LT3G
MFR Recommended
NSVF4009SG4T1G
onsemiIn Stock: 859NSVF4009SG4T1G Datasheet
NSVF4009SG4T1G
MFR Recommended
PH1090-350L
MACOM Technology SolutionsIn Stock: 1026PH1090-350L Datasheet
PH1090-350L
MFR Recommended

Key Parameters

Parameter FMMTH10TC Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 25V V
Frequency - Transition 650MHz MHz
Noise Figure (Typ @ f) 3dB ~ 5dB @ 500MHz dB
Power - Max 330mW mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V
Current - Collector (Ic) (Max) 25mA mA
Operating Temperature -55°C ~ 150°C (TJ) °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FMMTH10TC is determined by the following critical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN (required match)
  • Voltage - Collector Emitter Breakdown (Max): 25V or greater (must support or exceed)
  • Frequency - Transition: 650MHz or greater (must support or exceed)
  • Package / Case: SOT-23-3 compatible form factor (mechanical compatibility)
  • Mounting Type: Surface Mount (required match)
  • Operating Temperature Range: -55°C to 150°C or compatible subset
  • RoHS Status: ROHS3 Compliant (regulatory requirement)
  • Moisture Sensitivity Level: 1 (Unlimited) or equivalent

Secondary Compatibility Parameters:

  • DC Current Gain (hFE): 60 @ 4mA, 10V or functionally equivalent
  • Current - Collector (Ic) (Max): 25mA or greater
  • Power - Max: 330mW or greater

Substitutes are grouped into two categories:

Category A - Direct Package Equivalents (SOT-23-3): Parts maintaining identical or pin-compatible package geometry, enabling direct board-level replacement without layout modification.

Category B - Functional Equivalents (Alternative Packages): Parts meeting or exceeding all electrical parameters but utilizing different surface mount packages, requiring board redesign or adapter consideration.

Parameter Comparison

Part Number Manufacturer Transistor Type Vce (Max) [V] Frequency [MHz/GHz] Power (Max) [mW] hFE (Min) @ Ic, Vce Ic (Max) [mA] Package Product Status
FMMTH10TC Diodes Incorporated NPN 25 650 330 60 @ 4mA, 10V 25 SOT-23-3 Obsolete
MMBTH10LT1G onsemi NPN 25 650 225 60 @ 4mA, 10V SOT-23-3 Active
MMBTH10LT3G onsemi NPN 25 650 225 60 @ 4mA, 10V SOT-23-3 Active
MMBTH10-4LT1G onsemi NPN 25 800 225 120 @ 4mA, 10V SOT-23-3 Active
KST10MTF onsemi NPN 25 650 350 60 @ 4mA, 10V SOT-23-3 Active
MMBT5179 onsemi NPN 12 2000 225 25 @ 3mA, 1V 50 SOT-23-3 Active
NSVF4009SG4T1G onsemi NPN 3.5 25000 120 50 @ 5mA, 1V 40 SC-82FL/MCPH4 Active
BFP405FH6327XTSA1 Infineon Technologies NPN 4.5 25000 75 60 @ 5mA, 4V 25 4-TSFP Active
BFP620FH7764XTSA1 Infineon Technologies NPN 2.8 65000 185 110 @ 50mA, 1.5V 80 4-TSFP Active
BFP720ESDH6327XTSA1 Infineon Technologies NPN 4.7 43000 100 160 @ 15mA, 3V 30 SOT-343 Active
BFU690F,115 NXP USA Inc. NPN 5.5 18000 230 90 @ 20mA, 2V 100 SOT-343F Active

Engineering Selection Recommendations

Direct Replacement (Same Package - SOT-23-3):

The following parts are recommended as direct replacements for the FMMTH10TC in existing designs without board layout modification:

  1. MMBTH10LT1G (onsemi) - Identical electrical specifications at 650MHz, 25V Vce, matching hFE of 60 @ 4mA, 10V. Active product status with unlimited MSL and ROHS3 compliance. Suitable for direct pin-compatible substitution.

  2. MMBTH10LT3G (onsemi) - Identical to MMBTH10LT1G with equivalent electrical performance. Tape & Reel packaging option. Active product status with full compliance certifications.

  3. MMBTH10-4LT1G (onsemi) - Enhanced frequency capability at 800MHz with increased hFE of 120 @ 4mA, 10V. Maintains 25V Vce rating and SOT-23-3 package. Active product status. Suitable where higher frequency margin is required.

  4. KST10MTF (onsemi) - Exceeds power dissipation specification at 350mW versus 330mW original. Maintains 25V Vce, 650MHz frequency, and hFE of 60 @ 4mA, 10V. Active product status with full compliance. Recommended for applications requiring higher power margin.

Functional Equivalents (Alternative Packages):

The following parts meet or exceed electrical specifications but require board redesign due to package differences:

  1. NSVF4009SG4T1G (onsemi) - Automotive-qualified RF transistor with 25GHz frequency capability, 3.5V Vce, and SC-82FL/MCPH4 package. Exceeds frequency requirements significantly. AEC-Q101 qualified. Suitable for automotive RF applications requiring higher frequency performance.

  2. BFP720ESDH6327XTSA1 (Infineon Technologies) - High-frequency RF transistor at 43GHz with 4.7V Vce and SOT-343 package. Exceeds frequency and power specifications. Active product status with ROHS3 compliance. Suitable for applications requiring significantly higher frequency operation.

  3. BFU690F,115 (NXP USA Inc.) - RF transistor at 18GHz with 5.5V Vce and SOT-343F package. Exceeds frequency capability with 100mA collector current. Active product status with full compliance. Suitable for higher current RF applications.

Not Recommended for Direct Substitution:

  • MMBT5179 - Voltage rating of 12V is insufficient for 25V Vce requirement. Frequency capability of 2GHz exceeds application needs but voltage limitation precludes use.
  • BFP405FH6327XTSA1 - Voltage rating of 4.5V is insufficient for 25V Vce requirement.
  • BFP620FH7764XTSA1 - Voltage rating of 2.8V is insufficient for 25V Vce requirement.

Frequently Asked Questions (FAQ)

Q: Can MMBTH10LT1G directly replace FMMTH10TC without board modification?

A: Yes. MMBTH10LT1G maintains identical SOT-23-3 package geometry, pin configuration, and electrical specifications at 650MHz and 25V Vce with matching hFE of 60 @ 4mA, 10V. Direct pin-for-pin substitution is supported.

Q: What is the difference between MMBTH10LT1G and MMBTH10LT3G?

A: Both parts are electrically identical with 650MHz frequency, 25V Vce, and hFE of 60 @ 4mA, 10V. The primary difference is packaging format: MMBTH10LT1G is supplied in Cut Tape (CT) & Digi-Reel format, while MMBTH10LT3G is supplied in Tape & Reel (TR) format. Selection depends on procurement and assembly requirements.

Q: Why is MMBTH10-4LT1G listed as a substitute if it has different frequency and hFE specifications?

A: MMBTH10-4LT1G operates at 800MHz versus the original 650MHz, providing higher frequency margin. The hFE of 120 @ 4mA, 10V is double the original specification, which may affect circuit biasing. This part is suitable for applications where higher frequency capability is beneficial and circuit design accommodates the increased gain. Electrical characterization is required for specific applications.

Q: Can parts with lower voltage ratings like BFP405FH6327XTSA1 (4.5V) be used?

A: No. The FMMTH10TC specifies a maximum collector-emitter breakdown voltage of 25V. Substitutes must meet or exceed this voltage rating. Parts with lower voltage ratings will fail under the specified operating conditions and are not acceptable substitutes.

Q: What is the significance of the SOT-343 package alternatives?

A: SOT-343 is a smaller surface mount package compared to SOT-23-3. Parts in SOT-343 packages (BFP720ESDH6327XTSA1, BFU690F,115) require board layout redesign and cannot be used as direct pin-compatible replacements. These are functional equivalents suitable only for new designs or boards with modified layouts.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance status, matching the original FMMTH10TC specification. All parts also maintain Moisture Sensitivity Level 1 (Unlimited) and REACH Unaffected status.

Q: Which substitute offers the best power dissipation margin?

A: KST10MTF provides the highest power rating at 350mW compared to the original 330mW specification, offering approximately 6% additional margin while maintaining identical frequency, voltage, and gain specifications in the same SOT-23-3 package.

Q: Can NSVF4009SG4T1G be used in non-automotive applications?

A: NSVF4009SG4T1G is automotive-qualified (AEC-Q101) and can be used in non-automotive applications. However, its 3.5V Vce rating is insufficient for the 25V requirement of the FMMTH10TC, making it unsuitable regardless of application classification.

Q: What inventory considerations apply to these substitutes?

A: Inventory availability varies significantly. MMBTH10LT1G has 62,400 pieces in stock, KST10MTF has 391,101 pieces, and MMBTH10-4LT1G has 18,400 pieces, providing strong supply continuity. Higher-frequency alternatives (BFP series, BFU690F) have lower inventory levels (3,855 to 5,367 pieces), which may impact procurement timelines for high-volume requirements.

Request Quote (Ships tomorrow)