FMMTH10TA Equivalent & Substitute Parts

Part Overview

The FMMTH10TA is an RF transistor manufactured by Diodes Incorporated, classified as an NPN bipolar junction transistor (BJT) in the SOT-23-3 surface mount package. This device is rated for 25V collector-emitter breakdown voltage with a transition frequency of 650MHz and maximum power dissipation of 330mW. The FMMTH10TA is currently listed as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production requirements. Substitute parts are selected based on matching or exceeding critical electrical parameters including voltage rating, frequency capability, current handling, and thermal characteristics, while maintaining compatible packaging and mounting specifications.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	25V	V
Frequency - Transition	650MHz	MHz
Power - Max	330mW	mW
Current - Collector (Ic) (Max)	25mA	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V	—
Operating Temperature	-55°C ~ 150°C	°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FMMTH10TA are grouped into two categories based on substitution compatibility:

Category 1: Direct Electrical Equivalents (Same Voltage and Frequency Class)

These substitutes maintain the 25V collector-emitter breakdown voltage and 650MHz transition frequency specifications. They are suitable for direct replacement in applications where the original FMMTH10TA performance envelope is required. Selection within this category is determined by:

Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Package / Case: SOT-23-3 compatible
DC Current Gain (hFE) (Min): 60 @ 4mA, 10V or higher
Operating Temperature: -55°C ~ 150°C

Category 2: Enhanced Performance Substitutes (Higher Frequency or Current Capability)

These substitutes exceed the original specifications in frequency response or current handling while maintaining or exceeding the 25V voltage rating. These parts are suitable for applications requiring improved RF performance or higher current capacity.

Voltage - Collector Emitter Breakdown (Max): 25V or higher
Frequency - Transition: 650MHz or higher
Package / Case: SOT-23-3 compatible
Operating Temperature: -55°C ~ 150°C or higher

Category 3: Alternative Performance Class (Different Voltage or Package)

The BFP760H6327XTSA1 represents a different performance class with significantly higher frequency capability (45GHz) but lower voltage rating (4V) and different package (SOT-343). This part is listed for reference but operates in a different electrical domain.

Parameter Comparison

Part Number	Manufacturer	Product Status	Voltage - Vce (Max)	Frequency - Transition	Power - Max	Ic (Max)	hFE (Min) @ Ic, Vce	Package	Operating Temp
FMMTH10TA	Diodes Incorporated	Obsolete	25V	650MHz	330mW	25mA	60 @ 4mA, 10V	SOT-23-3	-55°C ~ 150°C
MMBTH10-7-F	Diodes Incorporated	Active	25V	650MHz	300mW	50mA	60 @ 4mA, 10V	SOT-23-3	-55°C ~ 150°C
KST10MTF	onsemi	Active	25V	650MHz	350mW	—	60 @ 4mA, 10V	SOT-23-3	—
MMBTH10-4LT1G	onsemi	Active	25V	800MHz	225mW	—	120 @ 4mA, 10V	SOT-23-3	-55°C ~ 150°C
MMBTH10LT1G	onsemi	Active	25V	650MHz	225mW	—	60 @ 4mA, 10V	SOT-23-3	-55°C ~ 150°C
MMBTH10LT3G	onsemi	Active	25V	650MHz	225mW	—	60 @ 4mA, 10V	SOT-23-3	-55°C ~ 150°C
MAX2601ESA+T	Analog Devices Inc./Maxim Integrated	Active	15V	1GHz	6.4W	1.2A	100 @ 250mA, 3V	8-SOIC-EP	150°C
BFP760H6327XTSA1	Infineon Technologies	Active	4V	45GHz	240mW	70mA	160 @ 35mA, 3V	SOT-343	150°C

Engineering Selection Recommendations

Primary Substitutes (Direct Replacement Candidates)

The MMBTH10-7-F (Diodes Incorporated) is the primary recommended substitute. This part maintains identical voltage and frequency specifications to the FMMTH10TA while offering enhanced current capability (50mA versus 25mA) and comparable power dissipation (300mW versus 330mW). The MMBTH10-7-F is in active production status with ROHS3 compliance and identical operating temperature range (-55°C ~ 150°C). Packaging is identical SOT-23-3 surface mount configuration.

The MMBTH10LT1G and MMBTH10LT3G (onsemi) provide direct electrical equivalence with matching 25V voltage rating, 650MHz transition frequency, and identical DC current gain specifications. Both are in active production status with ROHS3 compliance and -55°C ~ 150°C operating temperature range. Power dissipation is reduced to 225mW, which is acceptable for applications not requiring the full 330mW capability of the original part.

The KST10MTF (onsemi) maintains 25V voltage rating and 650MHz frequency with enhanced power dissipation capability (350mW). This part is in active production status with ROHS3 compliance and SOT-23-3 packaging.

Secondary Substitutes (Enhanced Performance)

The MMBTH10-4LT1G (onsemi) offers enhanced frequency capability at 800MHz while maintaining the 25V voltage rating and SOT-23-3 package. This part is suitable for applications requiring improved RF performance beyond the original 650MHz specification. DC current gain is increased to 120 @ 4mA, 10V. Operating temperature range matches the original specification (-55°C ~ 150°C).

Alternative Performance Class

The MAX2601ESA+T (Analog Devices Inc./Maxim Integrated) operates in a different performance class with significantly higher power dissipation (6.4W), higher current capability (1.2A), and higher transition frequency (1GHz). However, the voltage rating is reduced to 15V and the package is 8-SOIC-EP, requiring circuit board layout modifications. This part is suitable only for applications where the lower voltage rating is acceptable and the enhanced power handling is required.

The BFP760H6327XTSA1 (Infineon Technologies) represents a fundamentally different device class with 45GHz transition frequency but only 4V voltage rating and SOT-343 package. This part is not suitable as a direct substitute for the FMMTH10TA due to incompatible voltage and package specifications.

Compliance and Production Status

All recommended primary and secondary substitutes are in active production status with ROHS3 compliance and REACH unaffected designation. The original FMMTH10TA is obsolete, making transition to an active substitute necessary for continued design support.

Frequently Asked Questions (FAQ)

Q: Can the MMBTH10-7-F directly replace the FMMTH10TA in existing designs?

A: Yes. The MMBTH10-7-F maintains identical voltage (25V), frequency (650MHz), and DC current gain (60 @ 4mA, 10V) specifications. The SOT-23-3 package is identical, and the part is in active production status. The enhanced current capability (50mA versus 25mA) and slightly reduced power dissipation (300mW versus 330mW) are compatible with applications designed for the FMMTH10TA.

Q: What is the difference between MMBTH10LT1G and MMBTH10LT3G?

A: Both parts are electrically identical with matching 25V voltage rating, 650MHz frequency, 60 @ 4mA, 10V DC current gain, and -55°C ~ 150°C operating temperature. The primary difference is packaging format: MMBTH10LT1G is supplied in Cut Tape (CT) & Digi-Reel format, while MMBTH10LT3G is supplied in Tape & Reel (TR) format. Selection depends on production volume and assembly line requirements.

Q: Is the MMBTH10-4LT1G suitable for direct replacement?

A: The MMBTH10-4LT1G is suitable for applications where the enhanced frequency capability (800MHz versus 650MHz) is beneficial or required. The part maintains the 25V voltage rating, SOT-23-3 package, and -55°C ~ 150°C operating temperature. However, power dissipation is reduced to 225mW, which may be limiting in high-power applications. DC current gain is increased to 120 @ 4mA, 10V.

Q: Why is the MAX2601ESA+T listed as a substitute if it has a different package?

A: The MAX2601ESA+T is listed as an alternative for applications where the original FMMTH10TA specifications are insufficient. The 8-SOIC-EP package requires circuit board redesign, but the part offers significantly enhanced power dissipation (6.4W), current capability (1.2A), and frequency response (1GHz). This part is suitable only for new designs or major circuit revisions where the lower 15V voltage rating is acceptable.

Q: Can the BFP760H6327XTSA1 replace the FMMTH10TA?

A: No. The BFP760H6327XTSA1 operates in a fundamentally different performance class with 45GHz transition frequency but only 4V voltage rating. The SOT-343 package is incompatible with SOT-23-3 footprints. This part is not suitable as a substitute for the FMMTH10TA.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Voltage - Collector Emitter Breakdown rating must equal or exceed 25V; (2) Frequency - Transition must equal or exceed 650MHz; (3) Package / Case must be SOT-23-3 compatible; (4) DC Current Gain (hFE) must equal or exceed 60 @ 4mA, 10V; (5) Operating Temperature range should match or exceed -55°C ~ 150°C; (6) RoHS3 compliance and REACH unaffected status should be maintained.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts listed in this document are ROHS3 compliant and REACH unaffected, matching the compliance status of the original FMMTH10TA.

Q: What is the inventory status of substitute parts?

A: MMBTH10-7-F has 10,585 pieces in stock. KST10MTF has 391,101 pieces in stock. MMBTH10LT1G has 62,400 pieces in stock. MMBTH10LT3G has 1,095 pieces in stock. MMBTH10-4LT1G has 18,400 pieces in stock. MAX2601ESA+T has 925 pieces in stock. BFP760H6327XTSA1 has 800,300 pieces in stock. Inventory levels are subject to change and should be verified at time of procurement.

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