FMMTA56TA Equivalent & Substitute Parts

Part Overview

The FMMTA56TA is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for surface mount applications in the SOT-23-3 package. This device operates at 80 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and is rated for 330 mW power dissipation. The FMMTA56TA is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating modern active product availability.

Substiute Parts

FMMTA56TA
Diodes IncorporatedIn Stock: 83197FMMTA56TA Datasheet
FMMTA56TA
Current Part
MMBTA56-7-F
Diodes IncorporatedIn Stock: 36456MMBTA56-7-F Datasheet
MMBTA56-7-F
Direct
2SB1198KT146R
Rohm SemiconductorIn Stock: 10001722SB1198KT146R Datasheet
2SB1198KT146R
MFR Recommended
CMPT8599 TR PBFREE
Central Semiconductor CorpIn Stock: 2188CMPT8599 TR PBFREE Datasheet
CMPT8599 TR PBFREE
MFR Recommended
CMPTA56 TR PBFREE
Central Semiconductor CorpIn Stock: 10348CMPTA56 TR PBFREE Datasheet
CMPTA56 TR PBFREE
MFR Recommended
MMBT2907ALT1G
onsemiIn Stock: 1598431MMBT2907ALT1G Datasheet
MMBT2907ALT1G
MFR Recommended
MMBT2907ALT3G
onsemiIn Stock: 889099MMBT2907ALT3G Datasheet
MMBT2907ALT3G
MFR Recommended
MMBT4403LT1G
onsemiIn Stock: 824352MMBT4403LT1G Datasheet
MMBT4403LT1G
MFR Recommended
MMBT4403LT3G
onsemiIn Stock: 46972MMBT4403LT3G Datasheet
MMBT4403LT3G
MFR Recommended
MMBTA56-TP
Micro Commercial CoIn Stock: 60118MMBTA56-TP Datasheet
MMBTA56-TP
MFR Recommended
PBSS9110T,215
Nexperia USA Inc.In Stock: 2709PBSS9110T,215 Datasheet
PBSS9110T,215
MFR Recommended
PMBTA56,215
Nexperia USA Inc.In Stock: 2420PMBTA56,215 Datasheet
PMBTA56,215
MFR Recommended
PMBTA56,235
Nexperia USA Inc.In Stock: 8705PMBTA56,235 Datasheet
PMBTA56,235
MFR Recommended
SMBTA56E6433HTMA1
Infineon TechnologiesIn Stock: 790SMBTA56E6433HTMA1 Datasheet
SMBTA56E6433HTMA1
MFR Recommended
SMMBTA56LT1G
onsemiIn Stock: 18179SMMBTA56LT1G Datasheet
SMMBTA56LT1G
MFR Recommended
SMMBTA56LT3G
onsemiIn Stock: 2993SMMBTA56LT3G Datasheet
SMMBTA56LT3G
MFR Recommended

Key Parameters

Parameter FMMTA56TA Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 80 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 330 mW
Frequency - Transition 100 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100 nA
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package / Case SOT-23-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the FMMTA56TA are grouped based on electrical parameter compatibility within the following criteria:

Primary Substitution Parameters:

  • Transistor Type: PNP (required)
  • Voltage - Collector Emitter Breakdown: minimum 80 V
  • Current - Collector (Ic) (Max): minimum 500 mA
  • Package / Case: SOT-23-3 compatible
  • Mounting Type: Surface Mount

Secondary Compatibility Parameters:

  • Power dissipation rating
  • Frequency - Transition capability
  • DC Current Gain (hFE)
  • Vce Saturation characteristics
  • Operating temperature range

Parts are classified into two categories:

Direct Substitutes (Electrical Equivalents): Parts meeting or exceeding all primary parameters with identical or superior secondary characteristics. These include MMBTA56-7-F, MMBTA56-TP, CMPTA56 TR PBFREE, and 2SB1198KT146R.

Functional Alternatives (Parameter Relaxation): Parts with reduced voltage or current ratings that may be suitable for specific applications where the full 80 V / 500 mA specification is not required. These include MMBT4403LT1G, MMBT4403LT3G, and MMBT2907ALT1G.

Parameter Comparison

Part Number Manufacturer Vce Breakdown (V) Ic Max (mA) Power Max (mW) Frequency (MHz) hFE Min @ Ic, Vce Vce Sat (mV) @ Ib, Ic Package Status
FMMTA56TA Diodes Incorporated 80 500 330 100 50 @ 100mA, 1V 250 @ 10mA, 100mA SOT-23-3 Obsolete
MMBTA56-7-F Diodes Incorporated 80 500 300 50 100 @ 100mA, 1V 250 @ 10mA, 100mA SOT-23-3 Active
MMBTA56-TP Micro Commercial Co 80 500 225 50 100 @ 100mA, 1V 250 @ 10mA, 100mA SOT-23-3 Active
CMPTA56 TR PBFREE Central Semiconductor Corp 80 500 350 100 100 @ 100mA, 1V 250 @ 10mA, 100mA SOT-23-3 Active
CMPT8599 TR PBFREE Central Semiconductor Corp 80 500 350 150 100 @ 1mA, 5V 300 @ 10mA, 100mA SOT-23-3 Active
2SB1198KT146R Rohm Semiconductor 80 500 200 180 180 @ 100mA, 3V 500 @ 50mA, 500mA SOT-23-3 Active
PBSS9110T,215 Nexperia USA Inc. 100 1000 480 100 150 @ 500mA, 5V 320 @ 100mA, 1A SOT-23-3 Active
MMBT4403LT1G onsemi 40 600 300 200 100 @ 150mA, 2V 750 @ 50mA, 500mA SOT-23-3 Active
MMBT4403LT3G onsemi 40 600 300 200 100 @ 150mA, 2V 750 @ 50mA, 500mA SOT-23-3 Active
MMBT2907ALT1G onsemi 60 600 300 200 100 @ 150mA, 10V 1.6V @ 50mA, 500mA SOT-23-3 Active
MMBT2907ALT3G onsemi 60 600 300 200 100 @ 150mA, 10V 1.6V @ 50mA, 500mA SOT-23-3 Active

Engineering Selection Recommendations

Recommended Primary Substitutes (Full Electrical Equivalence):

MMBTA56-7-F (Diodes Incorporated) and CMPTA56 TR PBFREE (Central Semiconductor Corp) are the preferred direct substitutes for the FMMTA56TA. Both parts maintain the 80 V / 500 mA electrical specification, operate across the required temperature range, and are classified as Active products. MMBTA56-7-F carries AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade reliability. CMPTA56 TR PBFREE extends the upper operating temperature to 175°C, providing additional thermal margin in high-temperature environments.

MMBTA56-TP (Micro Commercial Co) provides equivalent electrical performance with reduced power dissipation (225 mW), suitable for applications where thermal management is less critical.

Recommended Secondary Substitutes (Enhanced Performance):

2SB1198KT146R (Rohm Semiconductor) exceeds the FMMTA56TA specification with superior transition frequency (180 MHz versus 100 MHz) and higher DC current gain (180 versus 50), making it suitable for high-frequency switching applications. This part operates within the same voltage and current envelope.

PBSS9110T,215 (Nexperia USA Inc.) provides enhanced current capacity (1 A versus 500 mA) and voltage rating (100 V versus 80 V), suitable for applications requiring higher power handling or voltage margin.

Functional Alternatives (Reduced Voltage Rating):

MMBT4403LT1G and MMBT4403LT3G (onsemi) operate at 40 V maximum collector-emitter breakdown voltage with 600 mA current capacity. These parts are suitable only for applications where the circuit voltage does not exceed 40 V. Both variants are Active products with identical electrical characteristics; selection between LT1G and LT3G variants depends on packaging requirements (Cut Tape versus Tape & Reel).

MMBT2907ALT1G and MMBT2907ALT3G (onsemi) operate at 60 V maximum collector-emitter breakdown voltage with 600 mA current capacity. These parts are suitable for applications operating below 60 V. Both variants are Active products with identical electrical characteristics.

Compliance and Certification:

All recommended substitutes are RoHS3 compliant and REACH unaffected. MMBTA56-7-F carries AEC-Q101 automotive qualification for applications requiring automotive-grade component certification.

Frequently Asked Questions (FAQ)

Q: Can MMBT4403LT1G or MMBT2907ALT1G be used as direct replacements for FMMTA56TA?

A: No. MMBT4403LT1G operates at 40 V maximum collector-emitter breakdown voltage, and MMBT2907ALT1G operates at 60 V. The FMMTA56TA is rated for 80 V. These parts are functional alternatives only for circuits operating below their respective voltage ratings. If the circuit applies 80 V across the collector-emitter junction, these parts will not provide adequate voltage margin and may fail.

Q: What is the difference between MMBTA56-7-F and MMBTA56-TP?

A: Both parts maintain the 80 V / 500 mA electrical specification and SOT-23-3 package. MMBTA56-7-F is manufactured by Diodes Incorporated with 300 mW power rating and carries AEC-Q101 automotive qualification. MMBTA56-TP is manufactured by Micro Commercial Co with 225 mW power rating. Selection depends on power dissipation requirements and whether automotive qualification is necessary.

Q: Is PBSS9110T,215 a suitable substitute for FMMTA56TA?

A: PBSS9110T,215 exceeds the FMMTA56TA specification in voltage (100 V versus 80 V), current (1 A versus 500 mA), and power dissipation (480 mW versus 330 mW). It is electrically compatible and suitable for direct substitution. The enhanced ratings provide additional design margin. However, verify that the higher current gain (150 versus 50) does not affect circuit biasing or switching characteristics in your specific application.

Q: What is the difference between 2SB1198KT146R and CMPTA56 TR PBFREE?

A: Both parts maintain 80 V / 500 mA electrical specification. 2SB1198KT146R (Rohm Semiconductor) offers superior transition frequency (180 MHz versus 100 MHz) and higher DC current gain (180 versus 100), making it preferable for high-frequency switching applications. CMPTA56 TR PBFREE (Central Semiconductor Corp) extends the upper operating temperature to 175°C. Selection depends on whether high-frequency performance or extended temperature range is the priority.

Q: Are MMBT2907ALT1G and MMBT2907ALT3G electrically identical?

A: Yes. Both parts have identical electrical specifications. The difference is packaging: MMBT2907ALT1G is supplied in Cut Tape (CT) & Digi-Reel format, while MMBT2907ALT3G is supplied in Tape & Reel (TR) format. Selection depends on your procurement and assembly process requirements.

Q: Can I use CMPT8599 TR PBFREE as a substitute for FMMTA56TA?

A: CMPT8599 TR PBFREE maintains the 80 V / 500 mA electrical specification and is suitable for direct substitution. It offers enhanced transition frequency (150 MHz versus 100 MHz) and extended operating temperature range (-65°C to 150°C). However, note that the DC current gain specification is measured at different conditions (100 @ 1mA, 5V versus 50 @ 100mA, 1V), and Vce saturation is higher (300 mV versus 250 mV). Verify these differences do not affect your circuit performance.

Q: What does "Active" product status mean compared to "Obsolete"?

A: Active status indicates the manufacturer continues production and supports the part through normal distribution channels. Obsolete status indicates the manufacturer has discontinued production. All recommended substitutes are Active products, ensuring long-term availability and supply chain continuity for your design.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

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