FMMTA13TA NPN Darlington Transistor Equivalent & Substitute Parts

Part Overview

The FMMTA13TA is an NPN Darlington bipolar junction transistor manufactured by Diodes Incorporated, designed for surface mount applications in the SOT-23-3 package. This device is rated for 40 V collector-emitter breakdown voltage and 300 mA maximum collector current with 330 mW power dissipation capability. The FMMTA13TA is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) Max	300	mA
Voltage - Collector Emitter Breakdown (Max)	40	V
Vce Saturation (Max)	900 mV @ 100 µA, 100 mA	—
DC Current Gain (hFE) Min	10000 @ 100 mA, 5 V	—
Power - Max	330	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FMMTA13TA are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Transistor Type: NPN - Darlington configuration
Collector Current (Ic) Max: 300 mA minimum requirement
Collector-Emitter Breakdown Voltage: Minimum 30 V (FMMTA13TA rated 40 V)
Package / Case: SOT-23-3 surface mount form factor
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

DC Current Gain (hFE): 5000 minimum at specified conditions
Vce Saturation characteristics within acceptable operating margins
RoHS3 compliance and MSL Level 1 rating

The three substitute parts listed below meet these criteria and are classified as active products with current manufacturing availability.

Parameter Comparison

Parameter	FMMTA13TA	MMBTA13-7-F	2SD1383KT146B	2SD2142KT146
Manufacturer	Diodes Incorporated	Diodes Incorporated	Rohm Semiconductor	Rohm Semiconductor
Product Status	Obsolete	Active	Active	Active
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) Max	300 mA	300 mA	300 mA	300 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	30 V	32 V	30 V
Vce Saturation (Max)	900 mV @ 100 µA, 100 mA	1.5 V @ 100 µA, 100 mA	1.5 V @ 400 µA, 200 mA	1.5 V @ 100 µA, 100 mA
Current - Collector Cutoff (Max)	100 nA	100 nA	1 µA	100 nA
DC Current Gain (hFE) Min	10000 @ 100 mA, 5 V	10000 @ 100 mA, 5 V	5000 @ 100 mA, 5 V	10000 @ 100 mA, 5 V
Power - Max	330 mW	300 mW	200 mW	200 mW
Frequency - Transition	—	125 MHz	250 MHz	200 MHz
Operating Temperature Range	-55 to 150°C (TJ)	-55 to 150°C (TJ)	150°C (TJ)	150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

MMBTA13-7-F (Diodes Incorporated)

The MMBTA13-7-F is the primary substitute for the FMMTA13TA. Both devices are manufactured by Diodes Incorporated and share identical collector current (300 mA) and DC current gain (10000 @ 100 mA, 5 V) specifications. The MMBTA13-7-F is classified as active product status with AEC-Q101 automotive qualification, ensuring ongoing supply chain availability and manufacturing support. The primary design consideration is the reduced collector-emitter breakdown voltage (30 V versus 40 V). Applications operating below 30 V are fully compatible. The MMBTA13-7-F includes transition frequency specification (125 MHz), providing additional performance data for high-frequency circuit applications.

2SD2142KT146 (Rohm Semiconductor)

The 2SD2142KT146 is manufactured by Rohm Semiconductor and maintains identical collector current (300 mA) and DC current gain (10000 @ 100 mA, 5 V) as the FMMTA13TA. This device is active product status with 200 MHz transition frequency. The collector-emitter breakdown voltage is 30 V, requiring circuit voltage verification. Power dissipation is reduced to 200 mW compared to the original 330 mW specification. Applications with thermal constraints or lower power requirements benefit from this characteristic.

2SD1383KT146B (Rohm Semiconductor)

The 2SD1383KT146B is manufactured by Rohm Semiconductor with 32 V collector-emitter breakdown voltage, providing the closest voltage rating to the original FMMTA13TA (40 V). This device supports 300 mA collector current and includes 250 MHz transition frequency. The DC current gain is specified at 5000 minimum (50% of the FMMTA13TA), which is acceptable for Darlington applications with moderate gain requirements. Power dissipation is 200 mW. The higher transition frequency (250 MHz) supports faster switching applications.

All three substitute parts are ROHS3 compliant, MSL Level 1 rated, and available in SOT-23-3 surface mount packaging. Selection between substitutes depends on specific application voltage requirements, thermal budget, and frequency performance needs.

Frequently Asked Questions (FAQ)

Q: Can the MMBTA13-7-F directly replace the FMMTA13TA in all applications?

A: The MMBTA13-7-F is electrically compatible for applications operating at 30 V or below. The primary difference is the reduced collector-emitter breakdown voltage (30 V versus 40 V). Circuits designed for the full 40 V rating require evaluation to confirm operation within the 30 V limit of the MMBTA13-7-F.

Q: What is the significance of the different Vce saturation specifications between substitute parts?

A: Vce saturation values indicate the voltage drop across the transistor in saturated (fully conducting) state. The FMMTA13TA specifies 900 mV at 100 µA base current and 100 mA collector current. Substitute parts specify 1.5 V under similar conditions. This difference affects power dissipation and heat generation in the circuit. Applications with tight thermal budgets or high current switching should account for this increased saturation voltage.

Q: Are all substitute parts available in the same SOT-23-3 package?

A: Yes. All substitute parts (MMBTA13-7-F, 2SD1383KT146B, and 2SD2142KT146) are available in the TO-236-3 / SC-59 / SOT-23-3 surface mount package. Physical footprint and pin configuration are identical, enabling direct PCB layout compatibility.

Q: What is the difference between the Rohm Semiconductor parts (2SD1383KT146B and 2SD2142KT146)?

A: The 2SD1383KT146B provides 32 V breakdown voltage with 250 MHz transition frequency and 200 mW power rating. The 2SD2142KT146 provides 30 V breakdown voltage with 200 MHz transition frequency and 200 mW power rating. Both maintain 300 mA collector current. The 2SD1383KT146B is selected for applications requiring higher voltage margin; the 2SD2142KT146 is selected when 30 V rating is sufficient and cost optimization is a factor.

Q: Does the reduced DC current gain (5000) of the 2SD1383KT146B affect circuit performance?

A: Darlington transistors are designed for high current gain applications. The 2SD1383KT146B minimum gain of 5000 at 100 mA, 5 V is acceptable for standard Darlington switching and amplification circuits. Applications requiring the full 10000 gain specification should use the MMBTA13-7-F or 2SD2142KT146.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The MMBTA13-7-F, 2SD1383KT146B, and 2SD2142KT146 are all ROHS3 compliant with MSL Level 1 (unlimited moisture sensitivity) rating, matching the environmental compliance profile of the FMMTA13TA.

Q: What is the operating temperature range for each substitute part?

A: The MMBTA13-7-F operates from -55°C to 150°C (TJ), matching the FMMTA13TA specification. The Rohm Semiconductor parts (2SD1383KT146B and 2SD2142KT146) specify maximum junction temperature of 150°C. Applications requiring the full -55°C to 150°C range should use the MMBTA13-7-F or verify that the Rohm parts' minimum operating temperature meets circuit requirements.

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