FMMT589TC Equivalent & Substitute Parts

Part Overview

The FMMT589TC is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This device operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 1 A and 500 mW power dissipation in a surface mount SOT-23-3 package. The FMMT589TC is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Equivalent parts maintain identical electrical performance characteristics, while substitute parts provide functional alternatives with modified specifications suitable for the same application space.

Substiute Parts

FMMT589TC
Diodes IncorporatedIn Stock: 25369FMMT589TC Datasheet
FMMT589TC
Current Part
FMMT549TA
Diodes IncorporatedIn Stock: 5217FMMT549TA Datasheet
FMMT549TA
Direct
FMMT589TA
Diodes IncorporatedIn Stock: 68423FMMT589TA Datasheet
FMMT589TA
Parametric Equivalent
FMMT549
onsemiIn Stock: 5464FMMT549 Datasheet
FMMT549
Direct
MMBT589LT1G
onsemiIn Stock: 59313MMBT589LT1G Datasheet
MMBT589LT1G
Direct
NSS30100LT1G
onsemiIn Stock: 32091NSS30100LT1G Datasheet
NSS30100LT1G
Direct
NSVMMBT589LT1G
onsemiIn Stock: 4405NSVMMBT589LT1G Datasheet
NSVMMBT589LT1G
Direct
2SB1695KT146
Rohm SemiconductorIn Stock: 2671902SB1695KT146 Datasheet
2SB1695KT146
MFR Recommended
2SB1695TL
Rohm SemiconductorIn Stock: 994032SB1695TL Datasheet
2SB1695TL
MFR Recommended
2SB1706TL
Rohm SemiconductorIn Stock: 18752SB1706TL Datasheet
2SB1706TL
MFR Recommended
2SB1708TL
Rohm SemiconductorIn Stock: 64412SB1708TL Datasheet
2SB1708TL
MFR Recommended
2SB1710TL
Rohm SemiconductorIn Stock: 156082SB1710TL Datasheet
2SB1710TL
MFR Recommended
2STR2230
STMicroelectronicsIn Stock: 2094722STR2230 Datasheet
2STR2230
MFR Recommended
BC858ALT1G
onsemiIn Stock: 29194BC858ALT1G Datasheet
BC858ALT1G
MFR Recommended
BC858B,215
Nexperia USA Inc.In Stock: 9197BC858B,215 Datasheet
BC858B,215
MFR Recommended
BC858B,235
Nexperia USA Inc.In Stock: 5797BC858B,235 Datasheet
BC858B,235
MFR Recommended
BC858BLT1G
onsemiIn Stock: 20298BC858BLT1G Datasheet
BC858BLT1G
MFR Recommended
BC858CLT1G
onsemiIn Stock: 35395BC858CLT1G Datasheet
BC858CLT1G
MFR Recommended
BC859B,215
NXP SemiconductorsIn Stock: 9498754BC859B,215 Datasheet
BC859B,215
MFR Recommended
BC859C,215
Nexperia USA Inc.In Stock: 16490BC859C,215 Datasheet
BC859C,215
MFR Recommended
BCW29,215
Nexperia USA Inc.In Stock: 4146BCW29,215 Datasheet
BCW29,215
MFR Recommended
BCW30,215
Nexperia USA Inc.In Stock: 12330BCW30,215 Datasheet
BCW30,215
MFR Recommended
BCW30LT1G
onsemiIn Stock: 28655BCW30LT1G Datasheet
BCW30LT1G
MFR Recommended
BCW61B,215
Nexperia USA Inc.In Stock: 1297BCW61B,215 Datasheet
BCW61B,215
MFR Recommended
BCW61C,215
Nexperia USA Inc.In Stock: 15224BCW61C,215 Datasheet
BCW61C,215
MFR Recommended
BCW61CE6327HTSA1
Infineon TechnologiesIn Stock: 1043BCW61CE6327HTSA1 Datasheet
BCW61CE6327HTSA1
MFR Recommended
BCW61D,215
Nexperia USA Inc.In Stock: 7261BCW61D,215 Datasheet
BCW61D,215
MFR Recommended
NSVBC858CLT1G
onsemiIn Stock: 6543NSVBC858CLT1G Datasheet
NSVBC858CLT1G
MFR Recommended
PBSS5130T,215
Nexperia USA Inc.In Stock: 9609PBSS5130T,215 Datasheet
PBSS5130T,215
MFR Recommended
PBSS5140T,215
Nexperia USA Inc.In Stock: 60208PBSS5140T,215 Datasheet
PBSS5140T,215
MFR Recommended
PBSS5230T,215
Nexperia USA Inc.In Stock: 3750PBSS5230T,215 Datasheet
PBSS5230T,215
MFR Recommended
PMMT591A,215
Nexperia USA Inc.In Stock: 9484PMMT591A,215 Datasheet
PMMT591A,215
MFR Recommended
PMMT591A,235
Nexperia USA Inc.In Stock: 1025PMMT591A,235 Datasheet
PMMT591A,235
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Ic) Maximum 1 A
Collector-Emitter Breakdown Voltage (Max) 30 V
Vce Saturation @ Ib, Ic 650 mV @ 200 mA, 2 A
Collector Cutoff Current (Max) 100 nA
DC Current Gain (hFE) Minimum @ Ic, Vce 100 @ 500 mA, 2 V
Power Dissipation Maximum 500 mW
Transition Frequency 100 MHz
Operating Temperature Range −55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FMMT589TC is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type must be PNP
  • Collector-emitter breakdown voltage must be 30 V or greater
  • Maximum collector current must be 1 A or greater
  • Vce saturation characteristics must support the application's switching requirements
  • DC current gain (hFE) minimum must be 100 or greater at specified conditions
  • Transition frequency must be 100 MHz or greater
  • Operating temperature range must encompass −55°C to 150°C or be compatible with application limits
  • Package must be SOT-23-3 (TO-236-3, SC-59) for mechanical compatibility
  • RoHS3 compliance and MSL 1 rating required for regulatory and manufacturing compatibility

Grouping Logic:

Group 1 – Parametric Equivalents: Parts with identical electrical specifications and same package, differing only in product status or packaging format (tape & reel versus cut tape).

Group 2 – Direct Substitutes (Same Collector Current): Parts maintaining 1 A collector current with 30 V breakdown voltage but with modified saturation voltage, power dissipation, or frequency characteristics within acceptable application ranges.

Group 3 – Enhanced Substitutes (Higher Collector Current): Parts with collector current ratings of 1.5 A or 2 A or 3 A, providing design margin and thermal headroom while maintaining 30 V breakdown voltage and SOT-23-3 package compatibility.

Parameter Comparison

Part Number Manufacturer Product Status Ic (Max) A Vce(br) V Vce Sat mV hFE (Min) Power mW Freq MHz Temp °C Package
FMMT589TC Diodes Inc. Obsolete 1 30 650 @ 200mA, 2A 100 @ 500mA, 2V 500 100 −55 to 150 SOT-23-3
FMMT589TA Diodes Inc. Active 1 30 650 @ 200mA, 2A 100 @ 500mA, 2V 500 100 −55 to 150 SOT-23-3
FMMT549TA Diodes Inc. Active 1 30 750 @ 200mA, 2A 100 @ 500mA, 2V 500 100 −55 to 150 SOT-23-3
FMMT549 onsemi Active 1 30 750 @ 200mA, 2A 100 @ 500mA, 2V 500 100 −55 to 150 SOT-23-3
MMBT589LT1G onsemi Active 1 30 650 @ 200mA, 2A 100 @ 500mA, 2V 310 100 −55 to 150 SOT-23-3
NSS30100LT1G onsemi Active 1 30 650 @ 200mA, 2A 100 @ 500mA, 2V 310 100 −55 to 150 SOT-23-3
NSVMMBT589LT1G onsemi Active 1 30 650 @ 200mA, 2A 100 @ 500mA, 2V 310 100 −55 to 150 SOT-23-3
2SB1695KT146 Rohm Semi. Active 1.5 30 370 @ 50mA, 1A 270 @ 100mA, 2V 200 280 −55 to 150 SOT-23-3
2SB1695TL Rohm Semi. Active 1.5 30 370 @ 50mA, 1A 270 @ 100mA, 2V 500 280 −55 to 150 SC-96
2SB1706TL Rohm Semi. Active 2 30 370 @ 75mA, 1.5A 270 @ 200mA, 2V 500 280 −55 to 150 SC-96
2SB1708TL Rohm Semi. Active 3 30 250 @ 30mA, 1.5A 270 @ 200mA, 2V 500 200 −55 to 150 SC-96

Engineering Selection Recommendations

Parametric Equivalent Selection:

FMMT589TA (Diodes Incorporated, Active) is the direct parametric equivalent to FMMT589TC. This part maintains identical electrical specifications including 1 A collector current, 30 V breakdown voltage, 650 mV saturation voltage, 100 MHz transition frequency, and 500 mW power dissipation. The primary distinction is product status: FMMT589TA is active with 68,400 units in stock, whereas FMMT589TC is obsolete. FMMT589TA is packaged in tape & reel format and is ROHS3 compliant with MSL 1 rating, meeting all regulatory requirements. This part is the preferred replacement for direct substitution in new designs and production.

Alternative Equivalent Selection:

FMMT549TA (Diodes Incorporated, Active) and FMMT549 (onsemi, Active) provide functional equivalence with modified saturation voltage (750 mV versus 650 mV). Both parts maintain 1 A collector current, 30 V breakdown voltage, 100 MHz transition frequency, and 500 mW power dissipation. The increased saturation voltage results in slightly higher power dissipation during saturation but remains within acceptable limits for most switching applications. Both are active products with substantial inventory and ROHS3 compliance.

Reduced Power Dissipation Alternatives:

MMBT589LT1G (onsemi, Active), NSS30100LT1G (onsemi, Active), and NSVMMBT589LT1G (onsemi, Active) maintain identical electrical performance to FMMT589TC with reduced maximum power dissipation of 310 mW. These parts are suitable for applications where thermal management is critical or where lower power consumption is advantageous. All three are active products with ROHS3 compliance and MSL 1 rating.

Enhanced Current Capability Alternatives:

2SB1695KT146 (Rohm Semiconductor, Active) provides 1.5 A collector current with improved saturation characteristics (370 mV) and higher transition frequency (280 MHz). This part offers design margin for applications requiring higher current capacity while maintaining 30 V breakdown voltage and SOT-23-3 package compatibility. Power dissipation is reduced to 200 mW in the SMT3 package variant.

2SB1695TL (Rohm Semiconductor, Active) offers the same 1.5 A current capability with 500 mW power dissipation in TSMT3 package (SC-96), providing thermal headroom for higher-power applications.

2SB1706TL (Rohm Semiconductor, Active) extends collector current to 2 A with 370 mV saturation voltage and 280 MHz transition frequency, suitable for applications requiring higher current handling with improved switching performance.

2SB1708TL (Rohm Semiconductor, Active) provides maximum current capability at 3 A with superior saturation characteristics (250 mV) and 500 mW power dissipation, offering the highest performance margin for demanding switching applications.

All recommended substitutes are active products with ROHS3 compliance, MSL 1 moisture sensitivity rating, and operating temperature ranges compatible with the original FMMT589TC specification.

Frequently Asked Questions (FAQ)

Q: Can FMMT589TA be used as a direct replacement for FMMT589TC?

A: Yes. FMMT589TA is the parametric equivalent with identical electrical specifications: 1 A collector current, 30 V breakdown voltage, 650 mV saturation voltage, 100 MHz transition frequency, and 500 mW power dissipation. The only difference is product status (active versus obsolete) and packaging format (tape & reel). FMMT589TA is the recommended replacement.

Q: What is the difference between FMMT589TA and FMMT549TA?

A: Both parts maintain 1 A collector current and 30 V breakdown voltage. The primary difference is Vce saturation voltage: FMMT589TA saturates at 650 mV while FMMT549TA saturates at 750 mV. The higher saturation voltage in FMMT549TA results in increased power dissipation during saturation but remains acceptable for most applications. FMMT589TA is preferred for direct replacement.

Q: Are the onsemi MMBT589LT1G, NSS30100LT1G, and NSVMMBT589LT1G parts interchangeable?

A: Yes, these three onsemi parts are electrically equivalent with identical specifications: 1 A collector current, 30 V breakdown voltage, 650 mV saturation voltage, 100 MHz transition frequency, and 310 mW power dissipation. They differ only in part number designation and internal device structure. All are suitable for applications where reduced power dissipation is beneficial.

Q: Can I use a 2 A or 3 A rated transistor in place of the 1 A FMMT589TC?

A: Yes. The 2SB1706TL (2 A) and 2SB1708TL (3 A) are functional substitutes that maintain 30 V breakdown voltage and provide enhanced current capability. These parts offer design margin and improved thermal performance. However, package compatibility must be verified: 2SB1706TL and 2SB1708TL use SC-96 (TSMT3) package rather than SOT-23-3, requiring PCB layout modification.

Q: What is the significance of the different package designations (SOT-23-3 versus SC-96)?

A: SOT-23-3 (TO-236-3, SC-59) and SC-96 (TSMT3) are different surface mount package outlines with different pin configurations and footprints. Parts using SOT-23-3 package are mechanically compatible with the original FMMT589TC and require no PCB modification. Parts using SC-96 package require different PCB footprints and cannot be used as direct drop-in replacements without layout redesign.

Q: Are all recommended substitutes RoHS3 compliant?

A: Yes. All recommended substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, meeting regulatory requirements for lead-free manufacturing and environmental compliance.

Q: Which substitute part should I select for a new design?

A: For direct replacement with identical specifications, select FMMT589TA (Diodes Incorporated). For applications requiring reduced power dissipation, select MMBT589LT1G, NSS30100LT1G, or NSVMMBT589LT1G (onsemi). For applications requiring higher current capacity with improved performance, select 2SB1695KT146 or 2SB1695TL (Rohm Semiconductor) for 1.5 A capability, or 2SB1706TL for 2 A capability. Verify package compatibility with your PCB design before final selection.

Q: What is the difference between cut tape and tape & reel packaging?

A: Cut tape (CT) packaging provides components in individual strips suitable for manual assembly or small-volume production. Tape & reel (TR) packaging provides components on continuous reels suitable for automated assembly equipment. Both formats contain identical components; packaging format selection depends on manufacturing process requirements.

Request Quote (Ships tomorrow)