FMMT5179TC Equivalent & Substitute Parts

Part Overview

The FMMT5179TC is an RF transistor NPN manufactured by Diodes Incorporated, designed for 12V applications with a 2GHz transition frequency and 330mW maximum power dissipation in a surface mount SOT-23-3 package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs.

Substiute Parts

FMMT5179TC
Diodes IncorporatedIn Stock: 787FMMT5179TC Datasheet
FMMT5179TC
Current Part
2SB1707TL
Rohm SemiconductorIn Stock: 634062SB1707TL Datasheet
2SB1707TL
MFR Recommended
2SC4915-O,LF
Toshiba Semiconductor and StorageIn Stock: 42132SC4915-O,LF Datasheet
2SC4915-O,LF
MFR Recommended
2SD2653KT146
Rohm SemiconductorIn Stock: 44822SD2653KT146 Datasheet
2SD2653KT146
MFR Recommended
BFP720FESDH6327XTSA1
Infineon TechnologiesIn Stock: 1039BFP720FESDH6327XTSA1 Datasheet
BFP720FESDH6327XTSA1
MFR Recommended
BSV52,215
Nexperia USA Inc.In Stock: 6792BSV52,215 Datasheet
BSV52,215
MFR Recommended
BSV52LT1G
onsemiIn Stock: 2207BSV52LT1G Datasheet
BSV52LT1G
MFR Recommended
JANTX2N5109
Microsemi CorporationIn Stock: 5787JANTX2N5109 Datasheet
JANTX2N5109
MFR Recommended
KSP10BU
Fairchild SemiconductorIn Stock: 124127KSP10BU Datasheet
KSP10BU
MFR Recommended
MMBT2484LT1G
onsemiIn Stock: 9298MMBT2484LT1G Datasheet
MMBT2484LT1G
MFR Recommended
MMBT2484LT3G
onsemiIn Stock: 30521MMBT2484LT3G Datasheet
MMBT2484LT3G
MFR Recommended
MMBT6429LT1G
onsemiIn Stock: 155261MMBT6429LT1G Datasheet
MMBT6429LT1G
MFR Recommended
MMBTH10-4LT1G
onsemiIn Stock: 18418MMBTH10-4LT1G Datasheet
MMBTH10-4LT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12 V
Frequency - Transition 2 GHz
Power - Max 330 mW
Current - Collector (Ic) (Max) 50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V
Noise Figure (dB Typ @ f) 4.5 @ 200MHz dB
Gain 15 dB
Operating Temperature -55 to 150 °C
Mounting Type Surface Mount
Package / Case SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FMMT5179TC is determined by the following critical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN (polarity requirement)
  • Voltage - Collector Emitter Breakdown (Max): 12V minimum
  • Frequency - Transition: 2GHz or higher
  • Power - Max: 330mW or higher
  • Current - Collector (Ic) (Max): 50mA or higher
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3 compatible footprint

Substitution Logic: Substitute parts are grouped based on adherence to these electrical and mechanical parameters. Parts meeting all primary criteria are classified as direct substitutes. Parts with enhanced specifications (higher voltage, frequency, or power ratings) are classified as functional equivalents suitable for drop-in replacement. Parts with reduced specifications or different mounting technologies are classified as alternative solutions requiring circuit evaluation.

Parameter Comparison

Parameter FMMT5179TC 2SC4915-O,LF 2SD2653KT146 BFP720FESDH6327XTSA1 BSV52,215 BSV52LT1G
Manufacturer Diodes Inc. Toshiba Rohm Infineon Nexperia onsemi
Transistor Type NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 30V 12V 4.7V 12V 12V
Frequency - Transition 2GHz 550MHz 360MHz 45GHz 500MHz 400MHz
Power - Max 330mW 100mW 200mW 100mW 250mW 225mW
Current - Collector (Ic) (Max) 50mA 20mA 2A 30mA 100mA 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V 70 @ 1mA, 6V 270 @ 200mA, 2V 160 @ 15mA, 3V 40 @ 10mA, 1V 40 @ 10mA, 1V
Operating Temperature -55 to 150°C 125°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55 to 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-3 SOT-416 SOT-23-3 4-TSFP SOT-23-3 SOT-23-3
Product Status Obsolete Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (SOT-23-3 Package, 12V Rating):

The BSV52LT1G and BSV52,215 are active NPN transistors rated for 12V operation in SOT-23-3 packages. Both devices maintain the same voltage rating and package footprint as the FMMT5179TC. The BSV52LT1G offers extended operating temperature range (-55 to 150°C) matching the original part specification. Both are ROHS3 compliant with MSL 1 rating.

Functional Equivalents (Enhanced Specifications):

The 2SD2653KT146 is an active NPN transistor in SOT-23-3 package rated for 12V with 2A maximum collector current and 360MHz transition frequency. This device provides higher current handling capability and maintains package compatibility. ROHS3 compliant with MSL 1 rating.

Alternative Solutions (Different Package or Reduced Specifications):

The 2SC4915-O,LF is an active NPN RF transistor rated for 30V with 550MHz transition frequency in SOT-416 package. This device requires PCB layout modification due to different package footprint but offers enhanced voltage rating and RF performance.

The BFP720FESDH6327XTSA1 is an active NPN RF transistor with 45GHz transition frequency in 4-TSFP package. This device is suitable for ultra-high-frequency applications but operates at reduced voltage (4.7V) and requires different PCB layout.

Compliance Status:

All recommended active substitutes maintain ROHS3 compliance and MSL 1 moisture sensitivity rating. All devices are classified as EAR99 for export control purposes.

Frequently Asked Questions (FAQ)

Q: Can BSV52LT1G directly replace FMMT5179TC in existing PCB layouts?

A: Yes. Both devices are packaged in SOT-23-3 and share identical pin configurations. The BSV52LT1G maintains the same 12V voltage rating and surface mount footprint. No PCB modification is required.

Q: What is the primary difference between BSV52,215 and BSV52LT1G?

A: Both are BSV52 base devices with identical electrical specifications and SOT-23-3 packaging. The primary difference is packaging format: BSV52,215 is supplied in Cut Tape (CT) & Digi-Reel format, while BSV52LT1G is supplied in Tape & Reel (TR) format. The BSV52LT1G specifies extended operating temperature range (-55 to 150°C) versus BSV52,215 at 150°C maximum.

Q: Is 2SD2653KT146 suitable for RF applications requiring 2GHz operation?

A: The 2SD2653KT146 has a transition frequency of 360MHz, which is below the 2GHz requirement of the FMMT5179TC. This device is suitable for general-purpose switching applications at 12V but not for RF applications requiring 2GHz performance.

Q: Why does BFP720FESDH6327XTSA1 have a lower voltage rating than FMMT5179TC?

A: The BFP720FESDH6327XTSA1 is optimized for ultra-high-frequency operation (45GHz) with reduced voltage rating (4.7V). This is a design trade-off in RF transistor architecture. This device is not suitable for 12V applications.

Q: What packaging considerations apply when substituting 2SC4915-O,LF?

A: The 2SC4915-O,LF uses SOT-416 (SSM) package instead of SOT-23-3. PCB layout modification is required, including different pad spacing and trace routing. Verify footprint compatibility with design tools before implementation.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended active substitute parts are ROHS3 compliant with MSL 1 moisture sensitivity rating, matching the compliance profile of the FMMT5179TC.

Q: Can MMBT2484LT1G or MMBT2484LT3G replace FMMT5179TC?

A: No. The MMBT2484 series is rated for 60V operation with unspecified transition frequency. These devices are not suitable for 2GHz RF applications and represent a different device class (general-purpose switching transistor).

Q: What is the significance of the JANTX2N5109 and KSP10BU in the substitute list?

A: These devices are through-hole components (TO-39 and TO-92-3 packages respectively) and are not direct substitutes for the surface mount SOT-23-3 FMMT5179TC. They require different PCB assembly processes and are listed as alternative solutions only for applications where through-hole technology is acceptable.

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