FMMT3906TA Equivalent & Substitute Parts

Part Overview

The FMMT3906TA is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for surface mount applications in the SOT-23-3 package. This device operates at 40 V collector-emitter breakdown voltage with a maximum collector current of 200 mA and a transition frequency of 250 MHz. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	FMMT3906TA Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	40	V
Current - Collector (Ic) (Max)	200	mA
Vce Saturation (Max) @ Ib, Ic	400 mV @ 5 mA, 50 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10 mA, 1 V	—
Power - Max	330	mW
Frequency - Transition	250	MHz
Operating Temperature	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	SOT-23-3	—
Product Status	Obsolete	—
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FMMT3906TA are grouped based on electrical parameter compatibility and product status. The primary substitution criteria are:

Critical Parameters for Substitution:

Transistor Type: PNP (mandatory match)
Voltage - Collector Emitter Breakdown: minimum 40 V (equal or higher acceptable)
Current - Collector (Ic) (Max): minimum 200 mA (equal or higher acceptable)
DC Current Gain (hFE): minimum 100 @ specified test conditions
Package / Case: SOT-23-3 or equivalent TO-236-3 footprint
Mounting Type: Surface Mount

Substitution Groups:

Group 1: Direct Electrical Equivalents (200 mA Current Rating) Parts maintaining the 200 mA collector current specification with 40 V or higher breakdown voltage. These provide pin-for-pin compatibility with identical current handling capacity.

Group 2: Higher Current Capability (500 mA Current Rating) Parts rated for 500 mA collector current with 45 V breakdown voltage. These provide enhanced current handling while maintaining voltage compatibility and are suitable for applications where additional current margin is beneficial.

Group 3: Reduced Current Capability (100 mA Current Rating) Parts rated for 100 mA collector current with 45 V breakdown voltage. These are suitable for applications where the full 200 mA capability is not required and provide automotive-grade qualification.

All substitute parts maintain SOT-23-3 or equivalent TO-236-3 package compatibility and surface mount mounting type.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Vce Sat @ Ib, Ic	hFE (Min) @ Ic, Vce	Freq MHz	Power mW	Temp °C	Package	Status	RoHS
FMMT3906TA	Diodes Inc.	200	40	400 mV @ 5 mA, 50 mA	100 @ 10 mA, 1 V	250	330	-55 to 150	SOT-23-3	Obsolete	Non-compliant
CMPT3906G TR PBFREE	Central Semiconductor	200	40	400 mV @ 5 mA, 50 mA	100 @ 10 mA, 1 V	250	350	-65 to 150	SOT-23-3	Active	ROHS3 Compliant
2PB709ARL,215	Nexperia USA Inc.	100	45	500 mV @ 10 mA, 100 mA	210 @ 2 mA, 10 V	70	250	-55 to 150	TO-236AB	Active	ROHS3 Compliant
2PB709ART,235	Nexperia USA Inc.	100	45	500 mV @ 10 mA, 100 mA	120 @ 2 mA, 10 V	70	250	-55 to 150	TO-236AB	Active	ROHS3 Compliant
2PB709ASL,215	Nexperia USA Inc.	100	45	500 mV @ 10 mA, 100 mA	290 @ 2 mA, 10 V	80	250	-55 to 150	TO-236AB	Active	ROHS3 Compliant
BC807,215	Nexperia USA Inc.	500	45	700 mV @ 50 mA, 500 mA	100 @ 100 mA, 1 V	80	250	-55 to 150	TO-236AB	Active	ROHS3 Compliant
BC807-16,215	Nexperia USA Inc.	500	45	700 mV @ 50 mA, 500 mA	100 @ 100 mA, 1 V	80	250	-55 to 150	TO-236AB	Active	ROHS3 Compliant
BC807-16LT1G	onsemi	500	45	700 mV @ 50 mA, 500 mA	100 @ 100 mA, 1 V	100	300	-55 to 150	SOT-23-3	Active	ROHS3 Compliant
BC807-16LT3G	onsemi	500	45	700 mV @ 50 mA, 500 mA	100 @ 100 mA, 1 V	100	300	-55 to 150	SOT-23-3	Active	ROHS3 Compliant
BC807-25,215	Nexperia USA Inc.	500	45	700 mV @ 50 mA, 500 mA	160 @ 100 mA, 1 V	80	250	-55 to 150	TO-236AB	Active	ROHS3 Compliant
BC807-25,235	Nexperia USA Inc.	500	45	700 mV @ 50 mA, 500 mA	160 @ 100 mA, 1 V	80	250	-55 to 150	TO-236AB	Active	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Specifications):

CMPT3906G TR PBFREE from Central Semiconductor Corp is the primary direct substitute. This part maintains identical collector current (200 mA), collector-emitter breakdown voltage (40 V), saturation voltage, and DC current gain specifications. The device is in active production status with ROHS3 compliance, addressing the obsolescence and compliance limitations of the FMMT3906TA. Operating temperature range extends to -65°C, providing enhanced low-temperature performance.

For Applications Requiring Reduced Current Capability:

The 2PB709 series (2PB709ARL,215, 2PB709ART,235, and 2PB709ASL,215) from Nexperia USA Inc. provides active, ROHS3-compliant alternatives with 100 mA collector current rating and 45 V breakdown voltage. These parts carry automotive-grade qualification (AEC-Q101) and are suitable for applications where the full 200 mA capability is not required. The 2PB709ASL,215 variant offers the highest DC current gain (290 @ 2 mA, 10 V) among this group.

For Applications Requiring Enhanced Current Capability:

The BC807 series from Nexperia USA Inc. and onsemi provides 500 mA collector current rating with 45 V breakdown voltage. BC807-16LT1G and BC807-16LT3G from onsemi offer the highest transition frequency (100 MHz) and power dissipation (300 mW) in the SOT-23-3 package, with operating temperature range of -55°C to 150°C. All BC807 variants are ROHS3 compliant and in active production.

All recommended substitutes maintain surface mount SOT-23-3 or equivalent TO-236-3 package compatibility, ensuring mechanical and electrical interchangeability at the board level.

Frequently Asked Questions (FAQ)

Q: Can CMPT3906G TR PBFREE be used as a direct replacement for FMMT3906TA?

A: Yes. CMPT3906G TR PBFREE maintains identical electrical specifications for collector current (200 mA), collector-emitter breakdown voltage (40 V), saturation voltage, and DC current gain. Both devices use the SOT-23-3 package. The substitute is in active production with ROHS3 compliance, eliminating obsolescence and regulatory concerns.

Q: What is the difference between the 2PB709 series and the FMMT3906TA?

A: The 2PB709 series operates at a reduced maximum collector current of 100 mA compared to the FMMT3906TA's 200 mA. The breakdown voltage is higher at 45 V versus 40 V. These parts are suitable for applications where 100 mA current capacity is sufficient. All 2PB709 variants carry automotive-grade qualification (AEC-Q101).

Q: When should BC807 series parts be selected instead of CMPT3906G?

A: BC807 series parts should be selected when the application requires collector current capability exceeding 200 mA. The BC807 is rated for 500 mA maximum collector current. BC807-16LT1G and BC807-16LT3G from onsemi offer the highest transition frequency (100 MHz) and power dissipation (300 mW) in the SOT-23-3 package.

Q: Are all substitute parts RoHS compliant?

A: All recommended substitute parts are ROHS3 compliant. The original FMMT3906TA is RoHS non-compliant. Substitution with any recommended part addresses regulatory compliance requirements for new designs and production.

Q: What is the package compatibility between SOT-23-3 and TO-236-3?

A: SOT-23-3 and TO-236-3 are equivalent package designations for the same physical form factor. Parts specified as either SOT-23-3 or TO-236AB are mechanically and electrically interchangeable at the board level, with identical pin assignments and footprints.

Q: How do the DC current gain specifications differ among substitutes?

A: DC current gain (hFE) varies by part and test conditions. FMMT3906TA specifies 100 @ 10 mA, 1 V. The 2PB709ASL,215 offers 290 @ 2 mA, 10 V, while BC807 variants specify 100 @ 100 mA, 1 V. Selection depends on the specific bias point required by the application circuit.

Q: Can parts with higher breakdown voltage be used in place of the FMMT3906TA?

A: Yes. Parts with higher collector-emitter breakdown voltage (45 V versus 40 V) are suitable substitutes, as they provide additional voltage margin. This does not compromise circuit operation in applications designed for 40 V operation.

Q: What is the significance of the transition frequency specification?

A: Transition frequency (fT) indicates the maximum frequency at which the transistor maintains useful gain. FMMT3906TA specifies 250 MHz. Substitutes range from 70 MHz to 100 MHz. For applications operating below the substitute's transition frequency, performance is equivalent. For high-frequency applications requiring 250 MHz operation, CMPT3906G TR PBFREE maintains this specification.

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