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Equivalent & Substitute Parts Reference for FMG-G26S
Part Overview
Manufacturer Part Number FMG-G26S, produced by Sanken Electric USA Inc., is a diode used for general purpose rectification, rated at 600 V, 4A, and packaged in the TO-220F-2L through-hole package. The device features fast recovery speeds and is compliant with RoHS standards. The FMG-G26S is currently designated as obsolete. As a result, engineers are required to identify alternative models with matching electrical, mechanical, and regulatory criteria to ensure continued design and production support.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | FMG-G26S |
| Category | Diodes, Rectifiers |
| Description | Diode 600 V 4A Through Hole TO-220F-2L |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 2.5 V @ 4 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Current - Reverse Leakage @ Vr | 500 µA @ 600 V |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220F-2L |
| Operating Temperature - Junction | -40°C ~ 150°C |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitute relationships for the FMG-G26S have been defined solely by matching the following quantifiable parameters: diode category, DC reverse voltage rating (Vr), average rectified current (Io), forward voltage drop (Vf), fast recovery speed specification, reverse recovery time (trr), reverse leakage current at Vr, mounting type, package type, supplier device package, operating temperature range, RoHS compliance, and moisture sensitivity level (MSL). Only parts meeting or exceeding these criteria are considered suitable alternatives.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | RoHS Status | Moisture Sensitivity Level (MSL) | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FMG-G26S | Sanken Electric USA Inc. | 600 V | 4A | 2.5 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 500 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -40°C ~ 150°C | RoHS Compliant | 1 (Unlimited) | Obsolete |
| BYC20X-600PQ | WeEn Semiconductors | 600 V | 20A | 2.5 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 175°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| BYC8X-600P,127 | WeEn Semiconductors | 600 V | 8A | 1.9 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 18 ns | 20 µA @ 600 V | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 175°C (Max) | RoHS Compliant | 1 (Unlimited) | Active |
| FFPF10UA60ST | onsemi | 600 V | 10A | 2.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 100 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C | ROHS3 Compliant | 1 (Unlimited) | Obsolete |
| MURF1560G | onsemi | 600 V | 15A | 1.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220FP | -65°C ~ 175°C | ROHS3 Compliant | Not Applicable | Active |
| RFNL10TJ6SGC9 | Rohm Semiconductor | 600 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 600 V | Through Hole | TO-220-2 | TO-220ACFP | 150°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| RFNL15TJ6SGC9 | Rohm Semiconductor | 600 V | 15A | 1.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C | ROHS3 Compliant | 3 (168 Hours) | Active |
| RFNL20TJ6SGC9 | Rohm Semiconductor | 600 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| RFNL5TJ6SGC9 | Rohm Semiconductor | 600 V | 5A | 1.3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| RFV12TJ6SGC9 | Rohm Semiconductor | 600 V | 12A | 2.8 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C | ROHS3 Compliant | 3 (168 Hours) | Active |
| RFV15TJ6SGC9 | Rohm Semiconductor | 600 V | 15A | 2.8 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C | ROHS3 Compliant | 3 (168 Hours) | Active |
| RFV8TJ6SGC9 | Rohm Semiconductor | 600 V | 8A | 2.8 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| RFVS8TJ6SGC9 | Rohm Semiconductor | 600 V | 8A | 3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 10 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| STTH12S06FP | STMicroelectronics | 600 V | 12A | 3.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 21 ns | 30 µA @ 600 V | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| STTH5R06D | STMicroelectronics | 600 V | 5A | 2.9 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 20 µA @ 600 V | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| STTH5R06FP | STMicroelectronics | 600 V | 5A | 2.9 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 20 µA @ 600 V | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) | ROHS3 Compliant | 1 (Unlimited) | Active |
| UGF5JHC0G | Taiwan Semiconductor Corporation | 600 V | 5A | 3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 30 µA @ 600 V | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C | ROHS3 Compliant | 1 (Unlimited) | Active |
| VS-ETL1506FP-M3 | Vishay General Semiconductor - Diodes Division | 600 V | 15A | 1.07 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 210 ns | 15 µA @ 600 V | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C | ROHS3 Compliant | 1 (Unlimited) | Active |
Engineering Selection Recommendations
Given the obsolete status of FMG-G26S, it is necessary to select substitute models that are active or not discontinued. All listed alternatives are RoHS compliant, and most maintain Moisture Sensitivity Level (MSL) 1 (Unlimited), matching FMG-G26S in compliance and reliability considerations. Substitutes should be selected strictly based on equivalency in electrical ratings, fast-recovery performance, package type, mounting method, and regulatory conformity as presented in key parameters.
Frequently Asked Questions (FAQ)
Q1: What are the primary electrical parameters to match when selecting substitutes for FMG-G26S?
A: Voltage - DC Reverse (Vr), Current - Average Rectified (Io), Voltage - Forward (Vf), speed (fast recovery), reverse recovery time (trr), and reverse leakage current.
Q2: Do substitute parts need to match the exact package or can similar variants be used?
A: Substitute parts must offer through-hole mounting and use the same or compatible TO-220-based package types to ensure physical fit and thermal management equivalence.
Q3: Does RoHS compliance affect substitute selection?
A: Yes, all substitutes listed are RoHS compliant, matching the main part's regulatory status.
Q4: Is there any impact from Moisture Sensitivity Level (MSL)?
A: All substitutes listed have MSL ratings provided. MSL 1 (Unlimited) matches the FMG-G26S rating, ensuring storage and handling compatibility.
Q5: Can substitutes with higher current capability or extended temperature ranges be considered?
A: If all other parameters are met or exceeded, alternatives with higher current or broader temperature range are included.
Q6: Are only fast-recovery diodes considered as substitutes?
A: Yes, only diodes with specified fast recovery speeds aligned to the “Fast Recovery =< 500ns, > 200mA (Io)” requirement are considered equivalent.
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