FMBA56 Equivalent & Substitute Parts

Part Overview

The FMBA56 is a PNP bipolar junction transistor manufactured by onsemi, rated for 80V collector-emitter breakdown voltage and 500mA maximum collector current. The device is packaged in SuperSOT-6 (SOT-23-6 Thin) surface mount configuration with a maximum power dissipation of 700mW and transition frequency of 50MHz. The FMBA56 is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements.

Substiute Parts

FMBA56
onsemiIn Stock: 24380FMBA56 Datasheet
FMBA56
Current Part
NSS60100DMTTBG
onsemiIn Stock: 4574NSS60100DMTTBG Datasheet
NSS60100DMTTBG
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) 250 mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) Min 100 @ 100mA, 1V
Power - Max 700 mW
Frequency - Transition 50 MHz
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FMBA56 is determined by the following critical electrical and mechanical parameters:

Transistor Configuration: The FMBA56 is a single PNP transistor. The NSS60100DMTTBG is a dual PNP transistor array (2 PNP), which represents a different device architecture and cannot serve as a direct pin-for-pin substitute.

Voltage Rating: The FMBA56 specifies 80V maximum collector-emitter breakdown voltage. The NSS60100DMTTBG is rated for 60V, which is lower than the original specification.

Current Rating: The FMBA56 supports 500mA maximum collector current. The NSS60100DMTTBG supports 1A, exceeding the original specification.

Power Dissipation: The FMBA56 is rated for 700mW. The NSS60100DMTTBG is rated for 2.27W, providing higher power handling capability.

Package Type: The FMBA56 uses SuperSOT-6 (SOT-23-6 Thin) packaging. The NSS60100DMTTBG uses 6-WDFN (2x2) packaging, which is physically and electrically incompatible.

Product Status: The FMBA56 is obsolete. The NSS60100DMTTBG is active and available.

Due to differences in transistor configuration (single vs. dual), voltage rating (80V vs. 60V), and package type (SuperSOT-6 vs. 6-WDFN), the NSS60100DMTTBG is not a direct functional equivalent for the FMBA56.

Parameter Comparison

Parameter FMBA56 NSS60100DMTTBG Unit
Manufacturer onsemi onsemi
Transistor Type PNP 2 PNP (Dual)
Current - Collector (Ic) Max 500 1000 mA
Voltage - Collector Emitter Breakdown (Max) 80 60 V
Vce Saturation (Max) 250 @ 10mA, 100mA 300 @ 100mA, 1A mV
Current - Collector Cutoff (Max) 100 100 nA
DC Current Gain (hFE) Min 100 @ 100mA, 1V 120 @ 500mA, 2V
Power - Max 700 2270 mW
Frequency - Transition 50 155 MHz
Operating Temperature -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 6-WDFN (2x2)
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active

Engineering Selection Recommendations

The FMBA56 is classified as obsolete. The NSS60100DMTTBG is an active product from the same manufacturer (onsemi) and shares identical operating temperature range and moisture sensitivity classification.

However, the NSS60100DMTTBG cannot serve as a direct replacement due to the following factors:

Architectural Incompatibility: The NSS60100DMTTBG is a dual PNP transistor array, whereas the FMBA56 is a single PNP transistor. This fundamental difference in device architecture prevents direct substitution.

Voltage Rating Mismatch: The FMBA56 specifies 80V maximum collector-emitter breakdown voltage. The NSS60100DMTTBG is rated for 60V. Applications requiring the full 80V rating cannot use the NSS60100DMTTBG.

Package Incompatibility: The FMBA56 uses SuperSOT-6 (SOT-23-6 Thin) packaging. The NSS60100DMTTBG uses 6-WDFN (2x2) packaging. These packages have different pinouts, footprints, and physical dimensions, making them incompatible on existing PCB layouts.

Compliance Status: Both devices are REACH Unaffected and carry EAR99 ECCN classification. The NSS60100DMTTBG is RoHS3 Compliant, whereas the FMBA56 compliance status is not specified in the provided data.

For applications requiring a direct replacement for the FMBA56, alternative single PNP transistors with 80V or higher voltage rating and SuperSOT-6 packaging must be sourced.

Frequently Asked Questions (FAQ)

Q: Can the NSS60100DMTTBG replace the FMBA56 in existing designs?

A: No. The NSS60100DMTTBG is a dual PNP transistor array with different pinout and package type (6-WDFN vs. SuperSOT-6). It cannot be used as a direct pin-for-pin replacement. Additionally, its 60V voltage rating is lower than the FMBA56's 80V specification.

Q: What is the primary reason the FMBA56 cannot be substituted with the NSS60100DMTTBG?

A: Three factors prevent substitution: (1) different transistor configuration (single vs. dual), (2) lower voltage rating (60V vs. 80V), and (3) incompatible package types with different pinouts and footprints.

Q: Are both devices from the same manufacturer?

A: Yes, both the FMBA56 and NSS60100DMTTBG are manufactured by onsemi.

Q: What is the operating temperature range for both devices?

A: Both devices operate across the identical temperature range of -55°C to 150°C (TJ).

Q: Does the NSS60100DMTTBG have higher current and power ratings than the FMBA56?

A: Yes. The NSS60100DMTTBG supports 1A collector current (vs. 500mA) and 2.27W power dissipation (vs. 700mW). However, these higher ratings do not compensate for the architectural, voltage, and package incompatibilities.

Q: What moisture sensitivity level applies to both devices?

A: Both devices are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions.

Q: Why is the FMBA56 listed as obsolete?

A: The FMBA56 has been discontinued by onsemi and is no longer in active production. Existing inventory is available, but new designs should not incorporate this part number.

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