FMB100 Equivalent & Substitute Parts

Part Overview

The FMB100 is an NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a maximum collector current of 500 mA, collector-emitter breakdown voltage of 45 V, and a transition frequency of 300 MHz. The device is housed in a SuperSOT™-6 surface mount package.

The FMB100 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

FMB100

onsemiIn Stock: 931FMB100 Datasheet

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FMB2222A

onsemiIn Stock: 3826FMB2222A Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FMB100 is based on the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Transistor configuration: NPN type required
• Maximum collector current: 500 mA or greater
• Collector-emitter breakdown voltage: 45 V or greater
• Transition frequency: 300 MHz or greater
• Power dissipation: 700 mW or greater
• DC current gain (hFE): minimum 100 at specified operating conditions
• Operating temperature range: -55°C to 150°C or wider

Mechanical Compatibility Criteria:

• Mounting type: Surface Mount
• Package: SuperSOT™-6 (SOT-23-6 Thin, TSOT-23-6)
• Moisture sensitivity level: 1 (Unlimited) or equivalent

The FMB2222A meets these substitution criteria with the following considerations: it is a dual NPN transistor array (2 NPN configuration) housed in the same SuperSOT™-6 package. While the FMB2222A has a slightly lower collector-emitter breakdown voltage (40 V versus 45 V), it maintains all other critical electrical parameters at or above the FMB100 specifications and is classified as an active product with current availability.

Parameter Comparison

Engineering Selection Recommendations

FMB2222A as Primary Substitute:

The FMB2222A is the qualified substitute for the FMB100. Selection of the FMB2222A is based on the following factors:

1. Product Status: The FMB2222A is classified as Active, ensuring ongoing availability and supply chain continuity. The FMB100 is obsolete, making substitution necessary for new production and long-term support.

2. Electrical Performance: The FMB2222A maintains electrical specifications within acceptable parameters for applications designed for the FMB100. The collector current (500 mA), power dissipation (700 mW), and transition frequency (300 MHz) are identical. The collector-emitter breakdown voltage is 40 V compared to 45 V; this represents a 5 V reduction and must be evaluated against specific application voltage requirements.

3. Compliance and Certifications: Both devices carry identical REACH Status (REACH Unaffected), ECCN (EAR99), and HTSUS classifications. The FMB2222A is RoHS3 Compliant, providing additional regulatory compliance assurance.

4. Package Compatibility: Both devices utilize the SuperSOT™-6 package with identical moisture sensitivity levels (MSL 1, Unlimited), ensuring mechanical and environmental compatibility.

5. Dual Configuration Consideration: The FMB2222A is a dual NPN transistor array. Applications requiring a single transistor must account for the additional transistor present in the package. Circuit design must either utilize both transistors or leave the unused transistor unconnected according to device datasheet guidelines.

Frequently Asked Questions (FAQ)

Q: Can the FMB2222A directly replace the FMB100 in all applications?

A: The FMB2222A is electrically compatible with the FMB100 for most applications. However, the collector-emitter breakdown voltage is reduced from 45 V to 40 V. Applications operating at voltages between 40 V and 45 V must be evaluated to confirm the lower voltage rating is acceptable. The FMB2222A is a dual transistor array; circuit design must accommodate or properly terminate the unused transistor.

Q: What is the significance of the FMB2222A being a dual NPN configuration?

A: The FMB2222A contains two independent NPN transistors within a single SuperSOT™-6 package. Applications designed for the single-transistor FMB100 can utilize one transistor of the FMB2222A. The second transistor may be used for additional circuit functions or left unconnected. Refer to the device datasheet for proper handling of unused transistor terminals.

Q: Are there package compatibility concerns between FMB100 and FMB2222A?

A: Both devices use the SuperSOT™-6 package (SOT-23-6 Thin, TSOT-23-6). Pin configurations differ due to the dual transistor design of the FMB2222A. PCB layout and schematic modifications are required to accommodate the different pin assignments. Consult device datasheets for detailed pinout information.

Q: What is the impact of the lower breakdown voltage on circuit design?

A: The FMB2222A has a maximum collector-emitter breakdown voltage of 40 V compared to the FMB100's 45 V. Applications operating below 40 V are unaffected. Applications designed to operate at voltages between 40 V and 45 V must be re-evaluated to confirm the lower rating provides adequate safety margin for the intended application.

Q: Why is the FMB100 classified as obsolete?

A: The FMB100 is no longer in active production. The FMB2222A represents the current active product offering from onsemi for this device category, providing equivalent electrical performance with improved supply chain availability.

Q: Are there compliance or regulatory differences between the two devices?

A: Both devices share identical REACH Status (REACH Unaffected) and ECCN (EAR99) classifications. The FMB2222A carries RoHS3 Compliance certification, providing additional regulatory assurance. Both devices have MSL 1 (Unlimited) moisture sensitivity levels.