Request Quote
(Ships tomorrow)
Equivalent & Substitute Parts Reference for Sanken Electric FKP330C
Part Overview
The Sanken Electric USA Inc. FKP330C is an N-Channel MOSFET designed for high voltage and high current applications (Drain to Source Voltage: 330V, Continuous Drain Current: 30A). The device is supplied in a TO-3P package for through-hole mounting. This part is classified as obsolete, creating the necessity to identify substitute MOSFETs with equivalent key electrical and mechanical parameters within the same product category (Transistors, FETs, MOSFETs).
Substiute Parts
Key Parameters
| Parameter | Main Part (FKP330C) | Description |
|---|---|---|
| Manufacturer Part Number | FKP330C | Identification code |
| Manufacturer | Sanken Electric USA Inc. | Original manufacturer |
| Category | Transistors, FETs, MOSFETs | Product classification |
| FET Type | N-Channel | Device polarity |
| Technology | MOSFET (Metal Oxide) | Device construction |
| Drain to Source Voltage (Vdss) | 330 V | Maximum voltage across drain and source |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) | Maximum continuous current |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 15A, 10V | Maximum drain-source on resistance |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA | Maximum gate threshold voltage |
| Vgs (Max) | ±30V | Maximum gate-source voltage |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V | Maximum input capacitance |
| Power Dissipation (Max) | 85W (Tc) | Maximum power dissipation |
| Operating Temperature | 150°C (TJ) | Maximum junction temperature |
| Mounting Type | Through Hole | Mechanical integration method |
| Supplier Device Package | TO-3P | Package type |
| RoHS Status | RoHS Compliant | Environmental compliance |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Reflow tolerance |
| ECCN | EAR99 | Export control classification |
| HTSUS | 8541.29.0095 | Tariff classification |
Substitute Part Grouping Explanation
Substitute selection for the FKP330C MOSFET is strictly based on the following key parameters: FET Type (N-Channel), Technology (MOSFET), maximum Drain to Source Voltage (Vdss), maximum Continuous Drain Current (Id), Rds On (Max) at specified Id and Vgs, Gate Threshold Voltage (Vgs(th)), maximum Gate-Source Voltage (Vgs), Input Capacitance (Ciss), maximum Power Dissipation, Operating Temperature, Mounting Type, and package compatibility. Only substitutes matching or closely aligning with these values and supplied in a compatible package within the Transistors, FETs, MOSFETs category are included.
Parameter Comparison
| Parameter | Main Part (FKP330C) | Substitute Part (IXTQ69N30PM) |
|---|---|---|
| Manufacturer Part Number | FKP330C | IXTQ69N30PM |
| Manufacturer | Sanken Electric USA Inc. | IXYS |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 330 V | 300 V |
| Current - Continuous Drain (Id) | 30A (Ta) | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 15A, 10V | 49mOhm @ 34.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA | 5V @ 250µA |
| Vgs (Max) | ±30V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V | 4960 pF @ 25 V |
| Power Dissipation (Max) | 85W (Tc) | 90W (Tc) |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-3P | TO-3PFP |
| RoHS Status | RoHS Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8541.29.0095 | 8541.29.0095 |
Engineering Selection Recommendations
The main part FKP330C is obsolete and RoHS compliant, with a Moisture Sensitivity Level of 1 (Unlimited) and ECCN EAR99. The substitute part IXTQ69N30PM is active, ROHS3 compliant, with equivalent MSL status and ECCN. Both parts share export classification (EAR99) and tariff code (HTSUS 8541.29.0095), and comply with environmental and moisture sensitivity requirements provided in the input.
Frequently Asked Questions (FAQ)
Q1: What are the critical parameters for substituting FKP330C with another MOSFET?
Key parameters include FET Type (N-Channel), Technology (MOSFET), maximum Drain to Source Voltage, Continuous Drain Current, maximum Rds On at specified conditions, maximum Gate-Source Voltage, Input Capacitance, Power Dissipation, Operating Temperature, Mounting Type, and package compatibility.
Q2: Is the package type of substitute IXTQ69N30PM compatible with FKP330C?
The main part uses TO-3P; the substitute uses TO-3PFP. Both are through-hole mounted and classified as TO-3P-3 Full Pack in the provided input, supporting mechanical compatibility.
Q3: Does the substitute MOSFET meet RoHS compliance and MSL criteria for manufacturing processes?
FKP330C is RoHS compliant, MSL 1 (Unlimited); IXTQ69N30PM is ROHS3 compliant, MSL 1 (Unlimited). Both meet the input-specified criteria for environmental and moisture sensitivity control.
Q4: Are the electrical specifications for voltage and current sufficiently similar for direct substitution?
Input specifies 330V, 30A for FKP330C and 300V, 25A for IXTQ69N30PM. Substitution is based strictly on these parameter values as outlined in input.
Q5: Which product status considerations affect the selection of substitute parts?
FKP330C is obsolete; IXTQ69N30PM is active. Product status is a primary factor in engineering replacement decisions.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts